Substrate processing apparatus, substrate processing method and recording medium

Patent metadata

Field	Value
Publication number	US-10651061-B2
Application number	US-201816163918-A
Country	US
Kind code	B2
Filing date	Oct 18, 2018
Priority date	Oct 19, 2017
Publication date	May 12, 2020
Grant date	May 12, 2020

Abstract

A substrate processing apparatus includes a processing unit and a control unit. The processing unit is configured to perform an etching processing by immersing a substrate in a processing liquid containing phosphoric acid and a silicon-containing compound. The control unit is configured to control the processing liquid such that the substrate is processed, in a first processing time of the etching processing, with the processing liquid having a first phosphoric acid concentration and a first silicon concentration, and the substrate is processed, in a second processing time later than the first processing time, with the processing liquid having a second preset phosphoric acid concentration lower than the first phosphoric acid concentration and a second preset silicon concentration lower than the first silicon concentration or with the processing liquid having the second preset phosphoric acid concentration and the first silicon concentration.

First claim

We claim:

1. A substrate processing apparatus, comprising:
a processing unit configured to perform an etching processing by immersing a substrate in a processing liquid containing phosphoric acid and a silicon-containing compound; and
a control unit configured to control the processing liquid such that the substrate is processed, in a first processing time of the etching processing, with the processing liquid having a first phosphoric acid concentration and a first silicon concentration, and the substrate is processed, in a second processing time later than the first processing time, with the processing liquid having a second preset phosphoric acid concentration lower than the first phosphoric acid concentration and a second preset silicon concentration lower than the first silicon concentration or with the processing liquid having the second preset phosphoric acid concentration and the first silicon concentration.

2. The substrate processing apparatus of claim 1 ,
wherein the control unit controls the processing liquid such that the substrate is processed with the processing liquid having a first temperature in the first processing time and the substrate is processed with the processing liquid having a second temperature lower than the first temperature in the second processing time.

3. The substrate processing apparatus of claim 2 ,
wherein the first temperature and the second temperature are temperatures at which the processing liquid comes into a boiling state.

4. The substrate processing apparatus of claim 3 ,
wherein the control unit drains a part of the processing liquid and newly supplies a liquid based on previously set information.

5. The substrate processing apparatus of claim 3 ,
wherein the control unit drains a part of the processing liquid and newly supplies a liquid based on a silicon concentration of the processing liquid.

6. The substrate processing apparatus of claim 3 ,
wherein during a predetermined time period after beginning the etching processing, the control unit maintains a phosphoric acid concentration equal to or higher than a preset concentration at which a silicon oxide film of the substrate is etched.

7. The substrate processing apparatus of claim 2 ,
wherein the control unit drains a part of the processing liquid and newly supplies a liquid based on previously set information.

8. The substrate processing apparatus of claim 2 ,
wherein the control unit drains a part of the processing liquid and newly supplies a liquid based on a silicon concentration of the processing liquid.

9. The substrate processing apparatus of claim 2 ,
wherein during a predetermined time period after beginning the etching processing, the control unit maintains a phosphoric acid concentration equal to or higher than a preset concentration at which a silicon oxide film of the substrate is etched.

10. The substrate processing apparatus of claim 1 ,
wherein the control unit drains a part of the processing liquid and newly supplies a liquid based on previously set information.

11. The substrate processing apparatus of claim 10 ,
wherein during a predetermined time period after beginning the etching processing, the control unit maintains a phosphoric acid concentration equal to or higher than a preset concentration at which a silicon oxide film of the substrate is etched.

12. The substrate processing apparatus of claim 1 ,
wherein during a predetermined time period after beginning the etching processing, the control unit maintains a phosphoric acid concentration equal to or higher than a preset concentration at which a silicon oxide film of the substrate is etched.

13. A substrate processing method, comprising:
processing, when performing an etching processing by immersing a substrate in a processing liquid containing phosphoric acid and a silicon-containing compound, the substrate with the processing liquid having a first phosphoric acid concentration and a first silicon concentration in a first processing time of the etching processing; and
processing, in a second processing time later than the first processing time, the substrate with the processing liquid having a second preset phosphoric acid concentration lower than the first phosphoric acid concentration and a second preset silicon concentration lower than the first silicon concentration or with the processing liquid having the second preset phosphoric acid concentration and the first silicon concentration.

14. A computer-readable recording medium having stored thereon computer-executable instructions that, in response to execution, cause a substrate processing apparatus to perform a substrate processing method as claimed in claim 13 .

Assignees

• Tokyo Electron Ltd

Inventors

• Ohno Hiroki
• Inada Takao
• Kawano Hisashi

Classifications

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0456

  in-line arrangement · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P72/0426 Primary

  with the semiconductor substrates being dipped in baths or vessels · CPC title