Gas feedthrough assembly

Patent metadata

Field	Value
Publication number	US-10640870-B2
Application number	US-201715465526-A
Country	US
Kind code	B2
Filing date	Mar 21, 2017
Priority date	Apr 25, 2016
Publication date	May 5, 2020
Grant date	May 5, 2020

Abstract

A gas feedthrough assembly and processing apparatus using the same are disclosed herein. In some embodiments, the gas feedthrough assembly, includes a dielectric body; at least one channel extending through the dielectric body; and a dielectric tube disposed within the at least one channel, wherein an inner diameter of the at least one channel is greater than an outer diameter of the dielectric tube such that a gap is formed between an outer wall of the dielectric tube and an inner wall of the at least one channel.

First claim

The invention claimed is:

1. A gas feedthrough assembly, comprising:
a dielectric body;
at least one channel extending through the dielectric body; and
a dielectric tube disposed within the at least one channel, wherein an inner diameter of the at least one channel is greater than an outer diameter of the dielectric tube such that a gap is formed between an outer wall of the dielectric tube and an inner wall of the at least one channel, wherein the gap is fluidly independent from an interior volume of the dielectric tube and extends from a first side of the dielectric body to a second side of the dielectric body opposite the first side.

2. The gas feedthrough assembly of claim 1 , wherein an inner wall of the dielectric tube has a surface roughness between about 5 micro-inches Ra to about 10 micro-inches Ra.

3. The gas feedthrough assembly of claim 1 , wherein the dielectric body is formed of aluminum oxide.

4. The gas feedthrough assembly of claim 1 , wherein the dielectric tube is formed, of quartz, polytetrafluoroethylene, silicon nitride, or aluminum nitride.

5. The gas feedthrough assembly of claim 1 , wherein the outer diameter of the dielectric tube is about 0.79 inches and the inner diameter of the channel is about 0.8 inches.

6. The gas feedthrough assembly of claim 1 , wherein the gap is about 5 millimeters thick.

7. The gas feedthrough assembly of claim 1 , further comprising:
a first conduit disposed through the dielectric tube; and
a second conduit disposed through the dielectric body and spaced apart from the
gap.

8. A processing chamber, comprising:
a chamber body having a substrate support disposed within a processing volume;
a lid moveably coupled to the chamber body;
a lid manifold moveably coupled to an upper surface of the lid and having central channel and at least one gas feed inlet fluidly coupled to the central channel;
a gas panel fluidly coupled to the lid manifold via at least one gas line and having at least one gas source and a gas inlet manifold;
a gas feedthrough assembly disposed between the gas inlet manifold and the lid manifold, the gas feedthrough assembly comprising:
a dielectric body;
at least one channel extending through the dielectric body; and
a dielectric tube disposed within the at least one channel and having first conduit fluidly coupled and corresponding to the at least one gas line,
wherein an inner diameter of the at least one channel is greater than an outer diameter of the dielectric tube such that a gap is formed between an outer wall of the dielectric tube and an inner wall of the at least one channel, wherein the gap is fluidly independent from an interior volume of the dielectric tube and extends from a first side of the dielectric body to a second side of the dielectric body opposite the first side.

9. The processing chamber of claim 8 , wherein the gas panel is fluidly coupled to the lid manifold via a first gas line and a second gas line, wherein the first conduit is fluidly coupled to the first gas line, and wherein the gas feedthrough assembly further comprises a second conduit disposed through the dielectric body and fluidly coupled to the second gas line.

10. The processing chamber of claim 9 , wherein the first gas line is coupled to a metal organic precursor gas source, and wherein the second gas line is coupled to a reductant gas, source.

11. The processing chamber of claim 9 , further comprising:
a first pair of o-rings disposed at a first interface of the dielectric tube and the lid manifold and a second interface of the dielectric tube and the gas inlet manifold, wherein the first pair of o-rings is concentric with the first conduit; and
a second pair of o-rings disposed at a first interface of the dielectric body and the lid manifold and a second interface of the dielectric body and the gas inlet manifold, wherein the second pair of o-rings is concentric with the second conduit.

12. The processing chamber of claim 11 , wherein the first and second pairs of o-rings are formed of a thermally insulative material.

13. The processing chamber of claim 8 , wherein an inner wall of the dielectric tube has surface roughness between about 5 micro-inches Ra to about 10 micro-inches Ra.

14. The processing chamber of claim 8 , wherein the dielectric body is formed of aluminum oxide.

15. The processing chamber of claim 8 , wherein the dielectric tube is formed of quartz, polytetrafluoroethylene, silicon nitride, or aluminum nitride.

16. The processing chamber of claim 8 , wherein the outer diameter of the dielectric tube is about 0.79 inches and the inner diameter of the channel is about 0.8 inches.

17. The processing chamber of claim 8 , wherein the gap is bout 5 millimeters thick.

18. The processing chamber of claim 8 , further comprising:
one or more alignment pins disposed in the lid manifold and protruding from a surface of the lid manifold at an interface of the lid manifold and the gas feedthrough assembly; and
one or more alignment holes corresponding to the one or more alignment pins and disposed in the dielectric body.

19. A gas feedthrough assembly, comprising
an aluminum oxide body;
a channel extending through the aluminum oxide body;
a quartz tube disposed within the channel and having a first conduit disposed through the quartz tube; and
a second conduit disposed through the aluminum oxide body, wherein an inner diameter of the channel is greater than an outer diameter of the quartz tube such that a gap is formed between an outer wall of the quartz tube and an inner wall of the channel, wherein the gap is fluidly independent from an interior volume of the quartz tube and extends from a first side of the aluminum oxide body to a second side of the aluminum oxide body opposite the first side.

20. The gas feedthrough assembly of claim 19 , wherein an inner wall of the quartz tube has a surface roughness between about 5 micro-inches Ra to about 10 micro-inches Ra.

Assignees

• Applied Materials Inc

Inventors

• Yao Daping
• Lam Hyman W H
• Lu Jiang
• Wu Dien-Yeh
• Xu Can
• Ma Paul F
• Chang Mei

Classifications

• C23C16/4404

  Coatings or surface treatment on the inside of the reaction chamber or on parts thereof · CPC title

• C23C16/45561 Primary

  Gas plumbing upstream of the reaction chamber · CPC title

• C23C16/455 Primary

  characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber · CPC title

• C23C16/45512

  Premixing before introduction in the reaction chamber · CPC title

• C23C16/458 Primary

  characterised by the method used for supporting substrates in the reaction chamber · CPC title