Chemical mechanical polishing method for tungsten

Patent metadata

Field	Value
Publication number	US-10640682-B2
Application number	US-201616335555-A
Country	US
Kind code	B2
Filing date	Sep 29, 2016
Priority date	Sep 29, 2016
Publication date	May 5, 2020
Grant date	May 5, 2020

Abstract

A process for chemical mechanical polishing a substrate containing tungsten is disclosed to reduce static corrosion rate and inhibit dishing of the tungsten and erosion of underlying dielectrics. The process includes providing a substrate; providing a polishing composition, containing, as initial components: water; an oxidizing agent; guar gum; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally a pH adjusting agent; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten (W) is polished away from the substrate, static corrosion rate is reduced, dishing of the tungsten (W) is inhibited as well as erosion of dielectrics underlying the tungsten (W).

First claim

What is claimed is:

1. A method of chemical mechanical polishing tungsten, comprising:
providing a substrate comprising tungsten and a dielectric;
providing a chemical mechanical polishing composition, comprising, as initial components:
water;
an oxidizing agent;
guar gum;
a colloidal silica abrasive;
a dicarboxylic acid,
a source of iron (III) ions; and,
optionally, a pH adjusting agent;
providing a chemical mechanical polishing pad, having a polishing surface;
creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and
dispensing the chemical mechanical polishing composition onto the polishing surface of the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate to remove at least some of the tungsten.

2. The method of claim 1 , wherein the chemical mechanical polishing composition provided has a tungsten removal rate of ≥1,000 Å/min with a platen speed of 80 revolutions per minute, a carrier speed of 81 revolutions per minute, a chemical mechanical polishing composition flow rate of 125 mL/min, a nominal down force of 21.4 kPa on a 200 mm polishing machine; and, wherein the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

3. The method of claim 1 , wherein the chemical mechanical polishing composition, provided comprises, as initial components:
the water;
0.01 to 10 wt % of the oxidizing agent, wherein the oxidizing agent is hydrogen peroxide;
50 to 1000 ppm of the guar gum;
0.01 to 10 wt % of the colloidal silica abrasive;
1 to 2,600 ppm of the dicarboxylic acid;
100 to 1,000 ppm of the source of iron (III) ions, wherein the source of iron (III) ions is ferric nitrate nonahydrate; and,
optionally, the pH adjusting agent;
wherein the chemical mechanical polishing composition has a pH of 1 to 7.

4. The method of claim 3 , wherein the chemical mechanical polishing composition provided has a tungsten removal rate of ≥1,000 Å/min with a platen speed of 80 revolutions per minute, a carrier speed of 81 revolutions per minute, a chemical mechanical polishing composition flow rate of 125 mL/min, a nominal down force of 21.4 kPa on a 200 mm polishing machine; and, wherein the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

5. The method of claim 1 , wherein the chemical mechanical polishing composition, provided comprises, as initial components:
the water;
0.1 to 5 wt % of the oxidizing agent, wherein the oxidizing agent is hydrogen peroxide;
50 to 500 ppm of the guar gum;
0.05 to 7.5 wt % of the colloidal silica abrasive;
100 to 1,400 ppm of the dicarboxylic acid;
150 to 750 ppm of the source of iron (III) ions, wherein the source of iron (III) ions is ferric nitrate; and,
optionally, the pH adjusting agent;
wherein the chemical mechanical polishing composition has a pH of 1.5 to 4.5.

6. The method of claim 5 , wherein the chemical mechanical polishing composition provided has a tungsten removal rate of ≥1,000 Å/min with a platen speed of 80 revolutions per minute, a carrier speed of 81 revolutions per minute, a chemical mechanical polishing composition flow rate of 125 mL/min, a nominal down force of 21.4 kPa on a 200 mm polishing machine; and, wherein the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

7. The method of claim 1 , wherein the chemical mechanical polishing composition, provided comprises, as initial components:
the water;
0.1 to 3 wt % of the oxidizing agent, wherein the oxidizing agent is hydrogen peroxide;
100 to 250 ppm of the guar gum;
0.1 to 5 wt % of the colloidal silica abrasive;
120 to 1,350 ppm of the dicarboxylic acid, wherein the dicarboxylic acid is malonic acid;
200 to 500 ppm of the source of iron (III) ions, wherein the source of iron (III) ions is ferric nitrate; and,
optionally, the pH adjusting agent;
wherein the chemical mechanical polishing composition has a pH of 1.5 to 3.5.

8. The method of claim 7 , wherein the chemical mechanical polishing composition provided has a tungsten removal rate of ≥1,000 Å/min with a platen speed of 80 revolutions per minute, a carrier speed of 81 revolutions per minute, a chemical mechanical polishing composition flow rate of 125 mL/min, a nominal down force of 21.4 kPa on a 200 mm polishing machine; and, wherein the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

Assignees

• Rohm & Haas Elect Materials Cmp Holdings Inc
• Rohm And Haas Electronics Mat Cmp Holdings Inc

Inventors

• Tsai Wei-Wen
• Ho Lin-Chen
• Lee Cheng-Ping

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• B24B37/24

  characterised by the composition or properties of the pad materials · CPC title

• C23F1/26

  for etching refractory metals · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title