Semiconductor device
US-10020403-B2 · Jul 10, 2018 · US
US10630176B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10630176-B2 |
| Application number | US-201715806394-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 8, 2017 |
| Priority date | Oct 25, 2012 |
| Publication date | Apr 21, 2020 |
| Grant date | Apr 21, 2020 |
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Official abstract text for this publication.
Provided is a structure which is capable of central control of an electric device and a sensor device and a structure which can reduce power consumption of an electric device and a sensor device. A central control system includes at least a central control device, an output unit, and an electric device or a sensor device. The central control device performs arithmetic processing on information transmitted from the electric device or the sensor device and makes the output unit output information obtained by the arithmetic processing. It is possible to know the state of the electric device or the sensor device even apart from the electric device or the sensor device. The electric device or the sensor device includes a transistor which includes an activation layer using a semiconductor with the band gap wider than that of single crystal silicon.
Opening claim text (preview).
The invention claimed is: 1. A sensor device comprising: a sensor; a power switch; a power source switch control circuit configured to control switching of the power switch; and a voltage regulator circuit configured to regulate an input voltage through the power switch and supply a voltage to the sensor, wherein the power switch comprises a transistor comprising an oxide semiconductor layer comprising a channel formation region, and wherein the sensor device is one selected from the group consisting of a fire alarm, a human detection sensor, a proximity switch, a vibration sensor, a radiation sensor, a surveillance camera, an electricity meter, a water meter, and a gas meter. 2. The sensor device according to claim 1 , wherein the sensor device is connected to a central control device by wireless communication. 3. The sensor device according to claim 1 , further comprising: a micro control unit; an amplifier circuit configured to amplify an input voltage from the sensor and output amplified voltage; and an AD converter configured to convert the amplified voltage to a digital signal and transmit the digital signal to the micro control unit. 4. A sensor device comprising: an interface configured to connect with a central control device; a sensor; a power switch; a power source switch control circuit configured to control switching of the power switch in accordance with a control signal from the central control device; and a voltage regulator circuit configured to regulate an input voltage through the power switch and supply a voltage to the sensor, wherein the power source switch control circuit is connected to the interface, wherein the power switch comprises a transistor comprising an oxide semiconductor layer comprising a channel formation region, and wherein the sensor device is one selected from the group consisting of a fire alarm, a human detection sensor, a proximity switch, a vibration sensor, a radiation sensor, a surveillance camera, an electricity meter, a water meter, and a gas meter. 5. The sensor device according to claim 4 , wherein the sensor device is connected to the central control device by wireless communication. 6. The sensor device according to claim 4 , further comprising: a micro control unit; an amplifier circuit configured to amplify an input voltage from the sensor and output amplified voltage; and an AD converter configured to convert the amplified voltage to a digital signal and transmit the digital signal to the micro control unit.
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