Semiconductor device

Patent metadata

Field	Value
Publication number	US-10020403-B2
Application number	US-201514719789-A
Country	US
Kind code	B2
Filing date	May 22, 2015
Priority date	May 27, 2014
Publication date	Jul 10, 2018
Grant date	Jul 10, 2018

Abstract

A low-power-consuming semiconductor device that can store analog data stably and very accurately is provided at low cost. The semiconductor device includes a power supply portion, a sensor portion, and a memory element portion. The sensor portion acquires analog data. The memory element portion stores the analog data. A channel formation region of a transistor included in the memory element portion is formed in an oxide semiconductor film. The semiconductor device does not include an analog/digital converter circuit and has functions of measuring and storing analog data.

First claim

What is claimed is:

1. A semiconductor device comprising:
a sensor part including a sensor, the sensor part configured to acquire analog data;
a memory element part including a memory cell comprising a transistor and a capacitor electrically connected to one of a source electrode and a drain electrode of the transistor, the memory element part configured to store the analog data, wherein a channel formation region of the transistor comprises an oxide semiconductor; and
a power supply part electrically connected to the sensor part and the memory element part,
wherein the sensor is provided on an insulating layer covering the transistor and the capacitor,
wherein an electrode of the sensor is electrically connected to the other of the source electrode and the drain electrode of the transistor via a conductive layer, and
wherein the conductive layer is electrically connected to the electrode of the sensor and the other of the source electrode and the drain electrode of the transistor via an opening in the insulating layer.

2. The semiconductor device according to claim 1 , wherein the power supply part comprises a solar cell.

3. The semiconductor device according to claim 1 , wherein the oxide semiconductor comprises indium, gallium, and zinc.

4. The semiconductor device according to claim 1 , wherein the sensor overlaps with the transistor.

5. The semiconductor device according to claim 1 , wherein the sensor comprises one of a resistor, a capacitive coupling element, an induction coupling element, a photovoltaic element, a photoelectric conversion element, a thermoelectric element, a transistor, a thermistor, a diode, a capacitive element, and a piezoelectric element.

6. The semiconductor device according to claim 1 , wherein the analog data is an analog value of physical quantity or chemical quantity measured in an environment outside the semiconductor device.

7. A semiconductor device comprising:
a sensor part including a sensor, the sensor part configured to acquire analog data of physical quantities or chemical quantities;
a memory element part including a memory cell comprising a transistor and a capacitor electrically connected to one of a source electrode and a drain electrode of the transistor, the memory element part configured to store the analog data, wherein a channel formation region of the transistor comprises an oxide semiconductor;
a power supply part electrically connected to the sensor part and the memory element part; and
an amplifier electrically connected to the memory element part,
wherein the sensor is provided on an insulating layer covering the transistor and the capacitor,
wherein an electrode of the sensor is electrically connected to the other of the source electrode and the drain electrode of the transistor via a conductive layer, and
wherein the conductive layer is electrically connected to the electrode of the sensor and the other of the source electrode and the drain electrode of the transistor via an opening in the insulating layer.

8. The semiconductor device according to claim 7 , wherein the power supply part comprises a solar cell.

9. The semiconductor device according to claim 7 , wherein the oxide semiconductor comprises indium, gallium, and zinc.

10. The semiconductor device according to claim 7 , wherein the sensor overlaps with the transistor.

11. The semiconductor device according to claim 7 , wherein the analog data is an analog value of physical quantity or chemical quantity measured in an environment outside the semiconductor device.

12. A semiconductor device comprising:
a sensor part including a sensor, the sensor part configured to acquire analog data of physical quantities or chemical quantities;
a memory element part including a memory cell comprising a transistor and a capacitor electrically connected to one of a source electrode and a drain electrode of the transistor, the memory element part configured to store the analog data, wherein a channel formation region of the transistor comprises an oxide semiconductor;
a power supply part electrically connected to the sensor part and the memory element part; and
an antenna part electrically connected the power supply part,
wherein the sensor is provided on an insulating layer covering the transistor and the capacitor,
wherein an electrode of the sensor is electrically connected to the other of the source electrode and the drain electrode of the transistor via a conductive layer, and
wherein the conductive layer is electrically connected to the electrode of the sensor and the other of the source electrode and the drain electrode of the transistor via an opening in the insulating layer.

13. The semiconductor device according to claim 12 , wherein the oxide semiconductor comprises indium, gallium, and zinc.

14. The semiconductor device according to claim 12 , wherein the sensor overlaps with the transistor.

15. The semiconductor device according to claim 12 , wherein the sensor comprises one of a resistor, a capacitive coupling element, an induction coupling element, a photovoltaic element, a photoelectric conversion element, a thermoelectric element, a transistor, a thermistor, a diode, a capacitive element, and a piezoelectric element.

16. The semiconductor device according to claim 1 , wherein the memory element part is configured to output the analog data to an external circuit.

17. A unit comprising:
the semiconductor device according to claim 1 ; and
an input/output device configured to read out the analog data from the semiconductor device,
wherein the input/output device includes an analog/digital converter circuit.

18. The semiconductor device according to claim 7 , wherein the memory element part is configured to output the analog data to an external circuit.

19. A unit comprising:
the semiconductor device according to claim 7 ; and
an input/output device configured to read out the analog data from the semiconductor device,
wherein the input/output device includes an analog/digital converter circuit.

20. The semiconductor device according to claim 12 , wherein the memory element part is configured to output the analog data to an external circuit.

21. A unit comprising:
the semiconductor device according to claim 12 ; and
an input/output device configured to read out the analog data from the semiconductor device,
wherein the input/output device includes an analog/digital converter circuit.

22. The semiconductor device according to claim 12 , wherein the analog data is an analog value of physical quantity or chemical quantity measured in an environment outside the semiconductor device.

Assignees

• Semiconductor Energy Lab

Inventors

• Tamura Hikaru

Classifications

• H01L27/1156

  Electricity · mapped topic

• H01L29/7869 Primary

  Electricity · mapped topic

• H01L27/1052

  Electricity · mapped topic

• H10D86/481

  integrated with passive devices, e.g. auxiliary capacitors · CPC title

• H10D86/423 Primary

  comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO · CPC title