Transistor with an oxide semiconductor layer

Patent metadata

Field	Value
Publication number	US-9040980-B2
Application number	US-201113046931-A
Country	US
Kind code	B2
Filing date	Mar 14, 2011
Priority date	Mar 26, 2010
Publication date	May 26, 2015
Grant date	May 26, 2015

Abstract

It is an object to provide a semiconductor device for high power application which has good properties. A means for solving the above-described problem is to form a transistor described below. The transistor includes a source electrode layer; an oxide semiconductor layer in contact with the source electrode layer; a drain electrode layer in contact with the oxide semiconductor layer; a gate electrode layer part of which overlaps with the source electrode layer, the drain electrode layer, and the oxide semiconductor layer; and a gate insulating layer in contact with an entire surface of the gate electrode layer.

First claim

The invention claimed is:

1. A transistor comprising:
a source electrode layer;
an oxide semiconductor layer in contact with the source electrode layer;
a drain electrode layer in contact with the oxide semiconductor layer;
a first gate electrode layer,
wherein part of the first gate electrode layer overlaps with the source electrode layer, the drain electrode layer, and the oxide semiconductor layer;
a second gate electrode layer,
wherein part of the second gate elect…

Assignees

• Endo Masami
• Semiconductor Energy Lab

Inventors

• Endo Masami

Classifications

• H10D30/6755 Primary

  Electricity · mapped topic

• H10D30/6733

  Electricity · mapped topic

• H10D30/673

  Electricity · mapped topic

• H10D30/6729

  Electricity · mapped topic

• H10D30/6728 Primary

  Electricity · mapped topic