Solar cells with differentiated P-type and N-type region architectures

Patent metadata

Field	Value
Publication number	US-10629758-B2
Application number	US-201615283137-A
Country	US
Kind code	B2
Filing date	Sep 30, 2016
Priority date	Sep 30, 2016
Publication date	Apr 21, 2020
Grant date	Apr 21, 2020

Abstract

Methods of fabricating solar cell emitter regions with differentiated P-type and N-type regions architectures, and resulting solar cells, are described. In an example, a solar cell can include a substrate having a light-receiving surface and a back surface. A first doped region of a first conductivity type, wherein the first doped region is disposed in a first portion of the back surface. A first thin dielectric layer disposed over the back surface of the substrate, where a portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type. A first semiconductor layer disposed over the first thin dielectric layer. A second doped region of a second conductivity type in the first semiconductor layer, where the second doped region is disposed over a second portion of the back surface. A first conductive contact disposed over the first doped region and a second conductive contact disposed over the second doped region.

First claim

What is claimed is:

1. A solar cell comprising:
a substrate having a light-receiving surface and a back surface;
a first doped region of a first conductivity type, wherein the first doped region is in a first portion of the substrate at the back surface of the substrate;
a first thin dielectric layer disposed over the back surface of the substrate, wherein a first portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type, and wherein a second portion of the first thin dielectric layer is disposed on the back surface of the substrate;
a dopant region disposed directly on the substrate, wherein the first portion of the first thin dielectric layer is disposed on the dopant region, the dopant region located between the first doped region and the first portion of the first thin dielectric layer;
a first semiconductor layer disposed over the first thin dielectric layer;
a second doped region of a second conductivity type in the first semiconductor layer, wherein the second doped region is disposed over a second portion of the back surface;
a first conductive contact disposed over the first doped region; and
a second conductive contact disposed over the second doped region.

2. The solar cell of claim 1 , wherein the substrate comprises a monocrystalline silicon substrate.

3. The solar cell of claim 1 , wherein the first conductivity type is P-type and the second conductivity type is N-type.

4. The solar cell of claim 1 , wherein the first thin dielectric layer comprises a tunnel oxide.

5. The solar cell of claim 1 , further comprising a contact opening disposed between the first doped region and the first conductive contact, wherein the contact opening allows for an electrical connection between the first doped region and the first conductive contact.

6. The solar cell of claim 1 , wherein the first semiconductor layer comprises polysilicon.

7. The solar cell of claim 1 , further comprising a second semiconductor layer disposed on the light-receiving surface.

8. The solar cell of claim 7 , wherein the second semiconductor layer comprises polysilicon.

9. A solar cell comprising:
a substrate having a light-receiving surface and a back surface;

a first doped region of a first conductivity type, wherein the first doped region is in a first portion of the substrate at the back surface of the substrate;
a first thin dielectric layer disposed over the back surface of the substrate, wherein a first portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type;
a dopant region disposed directly on the back surface of the substrate, wherein the first portion of the first thin dielectric layer is disposed on the dopant region, the dopant region located between the first doped region and the first portion of the first thin dielectric layer, wherein a second portion of the first thin dielectric layer is disposed laterally adjacent to a side surface of the dopant region, and a third portion of the first thin dielectric layer is disposed on the back surface of the substrate;
a first semiconductor layer disposed over the first thin dielectric layer;
a second doped region of a second conductivity type in the first semiconductor layer, wherein the second doped region is disposed over a second portion of the back surface;
a first conductive contact disposed over the first doped region; and
a second conductive contact disposed over the second doped region.

10. The solar cell of claim 9 , wherein the substrate comprises a monocrystalline silicon substrate.

11. The solar cell of claim 9 , wherein the first conductivity type is P-type and the second conductivity type is N-type.

12. The solar cell of claim 9 , wherein the first thin dielectric layer comprises a tunnel oxide.

13. The solar cell of claim 9 , further comprising a contact opening disposed between the first doped region and the first conductive contact, wherein the contact opening allows for an electrical connection between the first doped region and the first conductive contact.

14. The solar cell of claim 9 , wherein the first semiconductor layer comprises polysilicon.

15. The solar cell of claim 9 , further comprising a second semiconductor layer disposed on the light-receiving surface.

16. The solar cell of claim 15 , wherein the second semiconductor layer comprises polysilicon.

17. A solar cell comprising:
a substrate having a light-receiving surface and a back surface;
a first doped region of a first conductivity type, wherein the first doped region is in a first portion of the substrate at the back surface of the substrate;
a first thin dielectric layer disposed over the back surface of the substrate, wherein a first portion of the first thin dielectric layer is disposed over the first doped region of the first conductivity type, wherein a second portion of the first thin dielectric layer is disposed on the back surface of the substrate;
a dopant region disposed directly on the substrate, wherein the first portion of the first thin dielectric layer is disposed on the dopant region, dopant region located between the first doped region and the first portion of the first thin dielectric layer;
a first semiconductor layer disposed over the first thin dielectric layer;

a second doped region of a second conductivity type in the first semiconductor layer, wherein the second doped region is disposed over a second portion of the back surface;
a first conductive contact disposed over the first doped region, wherein first conductive contact is disposed over a first portion of the first semiconductor layer; and
a second conductive contact disposed over the second doped region.

18. The solar cell of claim 17 , wherein the first portion of the first semiconductor layer is separate from a second portion of the first semiconductor layer.

19. The solar cell of claim 18 , further comprising a separation region located between the first and second portions of the first semiconductor layer, wherein the separation region separates the first portion of the first semiconductor layer from the second portion of the first semiconductor layer.

20. The solar cell of claim 9 , wherein the first semiconductor layer comprises polysilicon, wherein the solar cell further comprises a second semiconductor layer disposed on the light-receiving surface, and wherein the second semiconductor layer comprises polysilicon.

Assignees

• Sunpower Corp

Inventors

• Rim Seung Bum
• Johnson Michael C

Classifications

• Y02E10/50

  Photovoltaic [PV] energy · CPC title

• H01L31/0352

  Electricity · mapped topic

• H01L31/02168 Primary

  Electricity · mapped topic

• H01L31/022441

  Electricity · mapped topic

• H01L31/02363

  Electricity · mapped topic