Method of forming a homogeneous solid metallic anode for a thin film microbattery

US10622590B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10622590-B2
Application numberUS-201816117892-A
CountryUS
Kind codeB2
Filing dateAug 30, 2018
Priority dateApr 8, 2014
Publication dateApr 14, 2020
Grant dateApr 14, 2020

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Abstract

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A method of providing an anode composed of a homogeneous solid metallic alloy is provided. The alloy includes 100 ppm to 1000 ppm Bi, 100 ppm to 1000 ppm In, and Zn. The method includes fabricating a cathode in a first cavity in a first dielectric element. The method further includes fabricating an anode in a second cavity in a second dielectric element. The method further includes joining the cathode and the anode in a complanate manner.

First claim

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What is claimed is: 1. A method for forming a battery, the method comprising: fabricating a cathode in a first cavity in a first dielectric element; fabricating an anode in a second cavity in a second dielectric element, wherein the anode is composed of a homogeneous solid metallic alloy consisting of 100 ppm to 1000 ppm Bi, 100 ppm to 1000 ppm In, and Zn, wherein the fabricating of the anode comprises forming a seed layer, electroplating, in any order, a layer of Bi, a layer of In, and a layer of Zn on a surface of the seed layer, and annealing the layer of Bi, the layer of In, and the layer of Zn to provide the homogeneous solid metallic alloy; and joining the cathode and the anode in a complanate manner. 2. The method of claim 1 , wherein the fabricating of the cathode comprises the use of no more than two lithographic masks. 3. The method of claim 1 , wherein the fabricating of the anode comprises the use of no more than three lithographic masks. 4. The method of claim 1 , wherein the fabricating of the anode comprises depositing an electrolyte separator material into the second cavity. 5. The method of claim 1 , wherein a concentration of In is in a range of 100 ppm to 500 ppm and a concentration of Bi is in a range of 100 ppm to 500 ppm. 6. The method of claim 1 , wherein the homogeneous solid metallic alloy has a resistivity in a range of about 5×10 −8 to 6×10 −8 ohm-m. 7. The method of claim 1 , wherein the anode has a thickness from 1 micron to 50 microns. 8. The method of claim 1 , wherein the cathode comprises one or more of NiOOH and MnO 2 . 9. The method of claim 1 , wherein the fabricating of the cathode comprises: etching the first cavity in the first dielectric element; depositing an adhesion metal layer in the first cavity; depositing a layer of transparent conductive oxide on the adhesion metal layer; depositing a patterned photoresist on the layer of transparent conductive oxide and a topmost surface of the first dielectric element; patterning the layer of transparent conductive oxide and the layer of transparent conductive oxide using the patterned photoresist as a mask; stripping the patterned photoresist; and inserting a cathode material in the first cavity. 10. The method of claim 9 , wherein the transparent conducting oxide comprises indium tin oxide (ITO), indium zinc oxide (IZO), Al-doped zinc oxide (AZO), Ga-doped zinc oxide (GZO) or mixtures thereof. 11. The method of claim 1 , further comprising cutting the co-joined cathode and anode. 12. The method of claim 1 , wherein the joining of the cathode and the anode comprises a bonding process. 13. The method of claim 1 , wherein the homogeneous solid metallic alloy has a percentage of a volume of voids that is less than 0.01%. 14. The method of claim 1 , wherein the homogeneous solid metallic alloy has no porosity. 15. The method of claim 1 , further comprising forming an adhesion metal layer in the second cavity prior to the forming of the seed layer. 16. A method for forming a battery, the method comprising: fabricating a cathode in a first cavity in a first dielectric element; fabricating an anode in a second cavity in a second dielectric element, wherein the anode is composed of a homogeneous solid metallic alloy consisting of 100 ppm to 1000 ppm Bi, 100 ppm to 1000 ppm In, and Zn, and joining the cathode and the anode in a complanate manner, wherein the fabricating of the cathode comprises: etching the first cavity in the first dielectric element; depositing an adhesion metal layer in the first cavity; depositing a layer of transparent conductive oxide on the adhesion metal layer; depositing a patterned photoresist on the layer of transparent conductive oxide and a topmost surface of the first dielectric element; patterning the layer of transparent conductive oxide and the layer of transparent conductive oxide using the patterned photoresist as a mask; stripping the patterned photoresist; and inserting a cathode material in the first cavity. 17. A method for forming a battery, the method comprising: fabricating a cathode in a first cavity in a first dielectric element; fabricating an anode in a second cavity in a second dielectric element, wherein the anode is composed of a homogeneous solid metallic alloy consisting of 100 ppm to 1000 ppm Bi, 100 ppm to 1000 ppm in, and Zn, and joining the cathode and the anode in a complanate manner, wherein the fabricating of the anode comprises: etching the second cavity in the second dielectric element; depositing an adhesion metal layer in the second cavity; depositing a layer of seed metal on the adhesion metal layer; and electroplating the homogeneous solid metallic alloy on the layer of seed metal.

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What does patent US10622590B2 cover?
A method of providing an anode composed of a homogeneous solid metallic alloy is provided. The alloy includes 100 ppm to 1000 ppm Bi, 100 ppm to 1000 ppm In, and Zn. The method includes fabricating a cathode in a first cavity in a first dielectric element. The method further includes fabricating an anode in a second cavity in a second dielectric element. The method further includes joining the …
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification H01M4/661. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Apr 14 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 9 related publications on this page (citations in our corpus or others sharing the same primary CPC).