Tantalum sputtering target and method for producing same
US-10407766-B2 · Sep 10, 2019 · US
US10611638B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10611638-B2 |
| Application number | US-201515126427-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 20, 2015 |
| Priority date | Mar 21, 2014 |
| Publication date | Apr 7, 2020 |
| Grant date | Apr 7, 2020 |
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A process for manufacturing a compound in powder form, wherein said compound is the reaction product of (i) at least one metal and/or metalloid, and (ii) at least one further element that is more electronegative than the metal and/or metalloid, which process includes steps of: mixing at least one oxide of said at least one metal and/or metalloid with a reducing agent including Ca or Mg granules or powder, and/or calcium hydride or magnesium hydride in granule or powder form, to form a mixture; exposing the mixture to a source of said at least one further element; maintaining said mixture under a H 2 atmosphere at a temperature of from 950° C. to 1500° C. for 1-10 hours; and, recovering said compound in powder form; wherein said at least one further element is selected from carbon, nitrogen, boron, silicon and mixtures thereof. A compound in powder form obtainable by such a process.
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The invention claimed is: 1. A process for manufacturing a compound in powder form, wherein said compound is the reaction product of (i) at least one metal and/or metalloid, and (ii) at least one further element that is more electronegative than each said metal and/or metalloid, wherein the process comprises the steps of: a. mixing at least one oxide of said at least one metal and/or metalloid with a reducing agent to form a mixture, wherein the reducing agent comprises Ca, Mg, calcium hydride, magnesium hydride or a mixture thereof and is provided in the form of granules or a powder; b. contacting the mixture with a source of said at least one further element; c. maintaining said mixture under a H 2 atmosphere at a temperature of from 950° C. to 1500° C. from 1 to 10 hours; and d. recovering said compound in powder form, further comprising between steps c and d the steps of: c1. switching the H 2 atmosphere to an Ar or N 2 atmosphere and maintaining the mixture thereunder for a period of at least 1 hour, followed by; c2. cooling under Ar or N 2 atmosphere, wherein said at least one further element is selected from carbon, nitrogen, boron, silicon and mixtures thereof, wherein said compound is a metal carbide, nitride, boride, or silicide. 2. The process according to claim 1 , wherein said at least one oxide comprises at least one selected from B 2 O 3 , SiO 2 , Sc 2 O 3 , TiO 2 , V 2 0 5 , Cr 2 O 3 , Y 2 O 3 , ZrO 2 , Nb 2 O 5 , MoO 3 , HfO 2 , Ta 2 O 5 , and WO 3 . 3. The process according to claim 1 , wherein the or each metal and/or metalloid is selected from Sc, Ti, V, Cr, Y, Zr, Nb, Mo, Hf, Ta, W, B, Si and mixtures thereof, and said at least one further element is selected from carbon, nitrogen, and mixtures thereof. 4. The process according to claim 3 , wherein said at least one further element is carbon, said compound in powder form is a carbide of the or each metal and/or metalloid, and said reducing agent comprises Ca, Mg and/or calcium hydride, and wherein in step (c) said mixture is maintained under a H 2 atmosphere at a temperature of from 950° C. to 1200° C. for 2-4 hours. 5. The process according to claim 3 , wherein said compound in powder form is B 4 C, SiC, ScC, TiC, VC, Cr 3 C 2 , Cr 7 C 3 , YC 2 , ZrC, NbC, Nb 2 C, Mo 2 C, HfC, TaC, Ta 2 C, WC, W 2 C, or a solid mixture of two or more of these carbides. 6. The process according to claim 3 , wherein said at least one further element is carbon, and wherein said compound in powder form is niobium carbide, tungsten carbide, or tungsten carbide containing tantalum as a dopant. 7. The process according to claim 1 , wherein the reducing agent comprises Ca and/or calcium hydride, and wherein the ratio between the number of oxygen atoms in the oxide of said at least one metal or metalloid and the number of calcium atoms (O:Ca) is in the range of 1:(1.7−1.1). 8. The process according to claim 1 , wherein said at least one metal or metalloid is selected from Sc, Ti, V, Cr, Y, Zr, Nb, Mo, Hf, Ta, W and mixtures thereof, and wherein said at least one further element is selected from boron, silicon, and mixtures thereof. 9. The process according to claim 8 , wherein said oxide of said at least one metal or metalloid comprises at least one selected from Sc 2 O 3 , TiO 2 , V 2 0 5 , Cr 2 O 3 , Y 2 O 3 , ZrO 2 , Nb 2 O 5 , MoO 3 , HfO 2 , Ta 2 O 5 , and WO 3 . 10. The process according to claim 1 , wherein the compound in powder form has a content of oxygen of less than 2% by weight. 11. The process according to claim 1 , wherein the compound in powder form has an average particle size X 50 of 100 μm or less. 12. The process according to claim 1 , wherein said compound in powder form has a content of oxygen of less than 1% by weight and an average particle size X 50 of 20 μm or less. 13. The process according to claim 1 , wherein maintaining said mixture under a H 2 atmosphere at a temperature of from 950° C. to 1500° C. from 1 to 10 hours is in an open furnace. 14. The process according to claim 13 , wherein the open furnace is a muffle open furnace. 15. The process according to claim 1 , wherein maintaining said mixture under a H 2 atmosphere is at a temperature of from 950° C. to 1150° C.
one element only · CPC title
Particles with a specific particle size distribution · CPC title
with vanadium, niobium or tantalum · CPC title
Preparation by direct nitridation of titanium, zirconium or hafnium · CPC title
Metal borides · CPC title
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