Tantalum sputtering target and method for producing same

Patent metadata

Field	Value
Publication number	US-10407766-B2
Application number	US-201314434159-A
Country	US
Kind code	B2
Filing date	Dec 6, 2013
Priority date	Dec 19, 2012
Publication date	Sep 10, 2019
Grant date	Sep 10, 2019

Abstract

A tantalum sputtering target, wherein, on a sputtering surface of the tantalum sputtering target, an average crystal grain size is 50 μm or more and 150 μm or less, and a variation in a crystal grain size is 30 μm or less. A tantalum sputtering target, wherein, on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane exceeds 70%, an orientation rate of a (222) plane is 30% or less, an average crystal grain size is 50 μm or more and 150 μm or less, and a variation in a crystal grain size is 30 μm or less. By controlling the crystal grain size of the target, or the crystal grain size and the crystal orientation of the target, effects are yielded in that the discharge voltage of the tantalum sputtering target can be reduced so that plasma can be more easily generated, and the voltage drift during deposition can be suppressed.

First claim

The invention claimed is:

1. A tantalum sputtering target, wherein, on a sputtering surface of the tantalum sputtering target, an orientation rate of a (200) plane is 70.3% or more and 82.6% or less, an orientation rate of a (222) plane is 7.0% or more and 16.1% or less, a sum total of orientation ratios of a (110) plane, a (211) plane, a (310) plane, and a (321) plane is 4% or more and 15.4% or less, an average crystal grain size is 50 μm or more and 150 μm or less, and a variation in a crystal grain size is 30 μm or less, and wherein the orientation rate is an intensity ratio of a specific plane orientation in which a measured intensity of the respective diffraction peaks of (110), (200), (211), (310), (222), (321) obtained with X-ray diffraction are standardized and a sum of the intensities of the respective plane orientations is 100.

2. The tantalum sputtering target according to claim 1 , wherein Joint Committee for Powder Diffraction Standard (JCPDS) is used for standardization such that the orientation rate of the (200) plane is expressed as ((measured intensity of (200)/JCPDS intensity of (200))/Σ(measured intensity of respective planes/JCPDS intensity of respective planes))×100, and the orientation rate of the (222) plane is expressed as ((measured intensity of (222)/JCPDS intensity of (222))/Σ(measured intensity of respective planes/JCPDS intensity of respective planes))×100.

3. A method of producing a tantalum sputtering target, wherein a molten tantalum ingot is subject to forging and recrystallization annealing, and thereafter subject to rolling and heat treatment to form a crystal structure having, on a sputtering surface of the target, an orientation rate of a (200) plane that is 70.3% or more and 82.6% or less, an orientation rate of a (222) plane that is 7.0% or more and 16.1% or less, a sum total of orientation ratios of a (110) plane, a (211) plane, a (310) plane, and a (321) plane that is 4% or more and 15.4% or less, an average crystal grain size of 50 μm or more and 150 μm or less, and a variation in a crystal grain size of 30 μm or less, and wherein the orientation rate is an intensity ratio of a specific plane orientation in which a measured intensity of the respective diffraction peaks of (110), (200), (211), (310), (222), (321) obtained with X-ray diffraction are standardized and a sum of the intensities of the respective plane orientations is 100.

4. The method of producing a tantalum sputtering target according to claim 3 , wherein the rolling is cold rolling performed using a rolling mill roll having a rolling mill roll diameter of 500 mm or less at a rolling speed of 10 m/min or more and a reduction exceeding 80%.

5. The method of producing a tantalum sputtering target according to claim 4 , wherein the heat treatment is performed at a temperature of 900° C. to 1400° C.

6. The method of producing a tantalum sputtering target according to claim 5 , wherein, after the rolling and heat treatment are performed, surface finishing is performed via machining or polishing.

7. The method according to claim 3 , wherein the heat treatment is performed at a temperature of 900° C. to 1400° C.

8. The method according to claim 3 , wherein, after the rolling and heat treatment are performed, surface finishing is performed via machining or polishing.

9. The method according to claim 3 , wherein Joint Committee for Powder Diffraction Standard (JCPDS) is used for standardization such that the orientation rate of the (200) plane is expressed as ((measured intensity of (200)/JCPDS intensity of (200))/Σ(measured intensity of respective planes/JCPDS intensity of respective planes))×100, and the orientation rate of the (222) plane is expressed as ((measured intensity of (222)/JCPDS intensity of (222))/Σ(measured intensity of respective planes/JCPDS intensity of respective planes))×100.

Assignees

• Jx Nippon Mining & Metals Corp

Inventors

• Senda Shinichiro
• Nagatsu Kotaro

Classifications

• H10W20/425

  Barrier, adhesion or liner layers · CPC title

• C23C14/16

  on metallic substrates or on substrates of boron or silicon · CPC title

• C01B21/0617

  with vanadium, niobium or tantalum · CPC title

• H01J37/3426

  Material · CPC title

• C23C14/3414 Primary

  Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy · CPC title