Niobium-containing film forming compositions and vapor deposition of niobium-containing films
US-9786671-B2 · Oct 10, 2017 · US
Niobium-Nitride film forming compositions and vapor deposition of Niobium-Nitride films
US10023462B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10023462-B2 |
| Application number | US-201514954351-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 30, 2015 |
| Priority date | Nov 30, 2015 |
| Publication date | Jul 17, 2018 |
| Grant date | Jul 17, 2018 |
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Abstract
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Disclosed are Niobium Nitride film forming compositions, methods of synthesizing the same, and methods of forming Niobium Nitride films on one or more substrates via vapor deposition processes using the Niobium Nitride film forming precursors.
First claim
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We claim: 1. A Niobium Nitride film forming composition comprising a precursor having the formula Nb(R 5 Cp) 2 (L) wherein each R is independently H, an alkyl group, or R′ 3 Si, with each R′ independently being H or an alkyl group; Cp is cyclopentadienyl; and L is selected from the group consisting of formamidinate ([R—N—C(H)═N—R′] or N R, R′ -fmd or NR-fmd when R═R′), amidinate ([R—N—C(R″)═N—R′] or N R, R′ R″-amd or N R R″-amd when R═R′), and guanidinate ([R—N—C(NR″R′″)═NR′] or N R, R′ , N R″ , R ′″ -gnd or N R , N R″ -gnd when R═R′ and R″═R′″) and each R, R′, R″, and R″ of the formamidinate, amidinate, or guanidinate ligand is independently H, a C1 to C6 alkyl group, or R′ 3 Si defined above. 2. The Niobium Nitride film forming composition of claim 1 , wherein the precursor has the formula Nb(R 5 Cp) 2 (N R, R′ -fmd) or Nb(R 5 Cp) 2 (N R -fmd) when R═R′. 3. The Niobium Nitride film forming composition of claim 2 , wherein each R and R′ is independently selected from the group consisting of H, Me, Et, nPr, iPr, tBu, sBu, iBu, nBu, tAmyl, SiMe 3 , SiMe 2 H, and SiH 2 Me. 4. The Niobium Nitride film forming composition of claim 3 , wherein the precursor is selected from the group consisting Nb(Cp) 2 (N Me -fmd), Nb(Cp) 2 (N Et -fmd), Nb(Cp) 2 (N iPr -fmd), Nb(Cp) 2 (N nPr -fmd), Nb(Cp) 2 (N iBu -fmd), Nb(Cp) 2 (N nBu -fmd), Nb(Cp) 2 (N tBu -fmd), Nb(Cp) 2 (N sBu -fmd), Nb(Cp) 2 (N tAm -fmd), Nb(Cp) 2 (N TMS -fmd), Nb(MeCp) 2 (N Me -fmd), Nb(MeCp) 2 (N Et -fmd), Nb(MeCp) 2 (N iPr -fmd), Nb(MeCp) 2 (N nPr -fmd), Nb(MeCp) 2 (N iBu -fmd), Nb(MeCp) 2 (N nBu -fmd), Nb(MeCp) 2 (N tBu -fmd), Nb(MeCp) 2 (N sBu -fmd), Nb(MeCp) 2 (N tAm -fmd), Nb(MeCp) 2 (N TMS -fmd), Nb(EtCp) 2 (N Me -fmd), Nb(EtCp) 2 (N Et -fmd), Nb(EtCp) 2 (N iPr -fmd), Nb(EtCp) 2 (N nPr -fmd), Nb(EtCp) 2 (N iBu -fmd), Nb(EtCp) 2 (N nBu -fmd), Nb(EtCp) 2 (N tBu -fmd), Nb(EtCp) 2 (N sBu -fmd), Nb(EtCp) 2 (N tAm -fmd), Nb(EtCp) 2 (N TMS -fmd), Nb(iPrCp) 2 (N Me -fmd), Nb(iPrCp) 2 (N Et -fmd), Nb(iPrCp) 2 (N iPr -fmd), Nb(iPrCp) 2 (N nPr -fmd), Nb(iPrCp) 2 (N iBu -fmd), Nb(iPrCp) 2 (N nBu -fmd), Nb(iPrCp) 2 (N tBu -fmd), Nb(iPrCp) 2 (N sBu -fmd), Nb(iPrCp) 2 (N tAm -fmd), Nb(iPrCp) 2 (N TMS -fmd), Nb(tBuCp) 2 (N Me -fmd), Nb(tBuCp) 2 (N Et -fmd), Nb(tBuCp) 2 (N iPr -fmd), Nb(tBuCp) 2 (N nPr -fmd), Nb(tBuCp) 2 (N iBu -fmd), Nb(tBuCp) 2 (N nBu -fmd), Nb(tBuCp) 2 (N tBu -fmd), Nb(tBuCp) 2 (N sBu -fmd), Nb(tBuCp) 2 (N tAm -fmd), Nb(tBuCp) 2 (N TMS -fmd), Nb(iPr 3 Cp) 2 (N Me -fmd), Nb(iPr 3 Cp) 2 (N Et -fmd), Nb(iPr 3 Cp) 2 (N iPr -fmd), Nb(iPr 3 Cp) 2 (N nPr -fmd), Nb(iPr 3 Cp) 2 (N iBu -fmd), Nb(iPr 3 Cp) 2 (N nBu -fmd), Nb(iPr 3 Cp) 2 (N tBu -fmd), Nb(iPr 3 Cp) 2 (N sBu -fmd), Nb(iPr 3 Cp) 2 (N tAm -fmd), Nb(iPr 3 Cp) 2 (N TMS -fmd), Nb(Cp*) 2 (N Me -fmd), Nb(Cp*) 2 (N Et -fmd), Nb(Cp*) 2 (N iPr -fmd), Nb(Cp*) 2 (N nPr -fmd), Nb(Cp*) 2 (N iBu -fmd), Nb(Cp*) 2 ( nBu -fmd), Nb(Cp*) 2 ( tBu -fmd), Nb(Cp*) 2 (N sBu -fmd), Nb(Cp*) 2 (N tAm -fmd), Nb(Cp*) 2 (N TMS -fmd), Nb(Me 3 SiCp) 2 (N Me -fmd), Nb(Me 3 SiCp) 2 (N Et -fmd), Nb(Me 3 SiCp) 2 (N iPr -fmd), Nb(Me 3 SiCp) 2 (N nPr -fmd), Nb(Me 3 SiCp) 2 (N iBu -fmd), Nb(Me 3 SiCp) 2 (N nBu -fmd), Nb(Me 3 SiCp) 2 (N tBu -fmd), Nb(Me 3 SiCp) 2 (N sBu -fmd), Nb(Me 3 SiCp) 2 (N tAm -fmd), Nb(Me 3 SiCp) 2 (N TMS -fmd), Nb(Cp)(Cp*)(N Me -fmd), Nb(Cp)(iPr 3 Cp)(N Me -fmd), Nb(Cp)(MeCp)(N Et -fmd), Nb(Cp)(EtCp)(N iPr -fmd), Nb(Cp)(iPrCp)(N nPr -fmd), Nb(Cp)(nPrCp)(N iBu -fmd), Nb(Cp)(iBuCp)(N nBu -fmd), Nb(Cp)(tBuCp)(N tBu -fmd), Nb(Cp)(tAmCp)(N sBu -fmd), Nb(Cp) 2 (N Et , tBu-fmd), Nb(MeCp) 2 (N Et, tBu -fmd), and Nb(EtCp) 2 (N Et, tBu -fmd), wherein Cp* is pentamethylcyclopentadienyl. 5. The Niobium Nitride film forming composition of claim 4 , wherein the precursor is Nb(EtCp) 2 (N iPr -fmd). 6. The Niobium Nitride film forming composition of claim 1 , wherein the precursor has the formula Nb(R 5 Cp) 2 (N R, R′ R″-amd) or Nb(R 5 Cp) 2 (N R R″-amd) when R═R′. 7. The Niobium Nitride film forming composition of claim 6 , wherein each R, R′, and R″ is independently selected from the group consisting of H, Me, Et, nPr, iPr, tBu, sBu, iBu, nBu, tAmyl, SiMe 3 , SiMe 2 H, and SiH 2 Me. 8. The Niobium Nitride film forming composition of claim 7 , wherein the precursor is selected from the group consisting of Nb(Cp) 2 (N Me Me-amd), Nb(Cp) 2 (N Et Me-amd), Nb(Cp) 2 (N iPr Me-amd), Nb(Cp) 2 (N nPr Me-amd), Nb(Cp) 2 (N iBu Me-amd), Nb(Cp) 2 (N nBu Me-amd), Nb(Cp) 2 (N tBu Me-amd), Nb(Cp) 2 (N sBu Me-amd), Nb(Cp) 2 (N tAm Me-amd), Nb(Cp) 2 (N TMS Me-amd), Nb(MeCp) 2 (N Me Me-amd), Nb(MeCp) 2 (N Et Me-amd), Nb(MeCp) 2 (N iPr Me-amd), Nb(MeCp) 2 (N nPr Me-amd), Nb(MeCp) 2 (N iBu Me-amd), Nb(MeCp) 2 (N nBu Me-amd), Nb(MeCp) 2 (N tBu Me-amd), Nb(MeCp) 2 (N sBu Me-amd), Nb(MeCp) 2 (N tAm Me-amd), Nb(MeCp) 2 (N TMS Me-amd), Nb(EtCp) 2 (N Me Me-amd), Nb(EtCp) 2 (N Et Me-amd), Nb(EtCp) 2 (N iPr Me-amd), Nb(EtCp) 2 (N nPr Me-amd), Nb(EtCp) 2 (N iBu Me-amd), Nb(EtCp) 2 (N nBu Me-amd), Nb(EtCp) 2 (N tBu Me-amd), Nb(EtCp) 2 (N sBu Me-amd), Nb(EtCp) 2 (N tAm Me-amd), Nb(EtCp) 2 (N TMS Me-amd), Nb(iPrCp) 2 (N Me Me-amd), Nb(iPrCp) 2 (N Et Me-amd), Nb(iPrCp) 2 (N iPr Me-amd), Nb(iPrCp) 2 (N nPr Me-amd), Nb(iPrCp) 2 (N iBu Me-amd), Nb(iPrCp) 2 (N nBu Me-amd), Nb(iPrCp) 2 (N tBu Me-amd), Nb(iPrCp) 2 (N sBu Me-amd), Nb(iPrCp) 2 (N tAm Me-amd), Nb(iPrCp) 2 (N TMS Me-amd), Nb(tBuCp) 2 (N Me Me-amd), Nb(tBuCp) 2 (N Et Me-amd), Nb(tBuCp) 2 (N iPr Me-amd), Nb(tBuCp) 2 (N nPr Me-amd), Nb(tBuCp) 2 (N iBu Me-amd), Nb(tBuCp) 2 (N nBu Me-amd), Nb(tBuCp) 2 (N tBu Me-amd), Nb(tBuCp) 2 (N sBu Me-amd), Nb(tBuCp) 2 (N tAm Me-amd), Nb(tBuCp) 2 (N TMS Me-amd), Nb(iPr 3 Cp) 2 (N Me Me-amd), Nb(iPr 3 Cp) 2 (N Et Me-amd), Nb(iPr 3 Cp) 2 (N iPr Me-amd), Nb(iPr 3 Cp) 2 (N nPr Me-amd), Nb(iPr 3 Cp) 2 (N iBu Me-amd), Nb(iPr 3 Cp) 2 (N nBu Me-amd), Nb(iPr 3 Cp) 2 (N tBu Me-amd), Nb(iPr 3 Cp) 2 (N sBu Me-amd), Nb(iPr 3 Cp) 2 (N tAm Me-amd), Nb(iPr 3 Cp) 2 (N TMS Me-amd), Nb(Cp*) 2 (N Me Me-amd), Nb(Cp*) 2 (N Et Me-amd), Nb(Cp*) 2 (N iPr Me-amd), Nb(Cp*) 2 (N nPr Me-amd), Nb(Cp*) 2 (N iBu Me-amd), Nb(Cp*) 2 ( nBu Me-amd), Nb(Cp*) 2 ( tBu Me-amd), Nb(Cp*) 2 (N sBu Me-amd), Nb(Cp*) 2 (N tAm Me-amd), Nb(Cp*) 2 (N TMS Me-amd), Nb(Me 3 SiCp) 2 (N Me Me-amd), Nb(Me 3 SiCp) 2 (N Et Me-amd), Nb(Me 3 SiCp) 2 (N iPr Me-amd), Nb(Me 3 SiCp) 2 (N nPr Me-amd), Nb(Me 3 SiCp) 2 (N iBu Me-amd), Nb(Me 3 SiCp) 2 (N nBu Me-amd), Nb(Me 3 SiCp) 2 (N tBu Me-amd), Nb(Me 3 SiCp) 2 (N sBu Me-amd), Nb(Me 3 SiCp) 2 (N tAm Me-amd), Nb(Me 3 SiCp) 2 (N TMS Me-amd), Nb(Cp)(Cp*)(N Me Me-amd), Nb(Cp)(iPr 3 Cp)(N Me Me-amd), Nb(Cp)(MeCp)(N Et Me-amd), Nb(Cp)(EtCp)(N iPr Me-amd), Nb(Cp)(iPrCp)(N nPr Me-amd), Nb(Cp)(nPrCp)(N iBu Me-amd), Nb(Cp)(iBuCp)(N nBu Me-amd), Nb(Cp)(tBuCp)(N tBu Me-amd), Nb(Cp)(tAmCp)(N sBu Me-amd), Nb(Cp) 2 (N iPr Et-amd), Nb(Cp) 2 (N iPr nPr-amd), Nb(Cp) 2 (N iPr iPr-amd), Nb(Cp) 2 (N iPr tBu-amd), Nb(Cp) 2 (N iPr nBu-amd), Nb(Cp) 2 (N iPr iBu-amd), Nb(Cp) 2 (N iPr sBu-amd), Nb(MeCp) 2 (N iPr Et-amd), Nb(MeCp) 2 (N iPr nPr-amd), Nb(MeCp) 2 (N iPr iPr-amd), Nb(MeCp) 2 (N iPr tBu-amd), Nb(MeCp) 2 (N iPr nBu-amd), Nb(MeCp) 2 (N iPr iBu-amd), Nb(MeCp) 2 (N iPr sBu-amd), Nb(EtCp) 2 (N iPr Et-amd), Nb(EtCp) 2 (N iPr nPr-amd), Nb(EtCp) 2 (N iPr iPr-amd), Nb(EtCp) 2 (N iPr tBu-amd), Nb(EtCp) 2 (N iPr nBu-amd), Nb(EtCp) 2 (N iPr iBu-amd), and Nb(EtCp) 2 (N iPr sBu-amd), wherein Cp* is pentamethylcyclopentadienyl. 9. The Niobium Nitride film forming composition of claim 8 , wherein the precursor is Nb(EtCp) 2 (N iPr Me-amd). 10. The Niobium Nitride film forming composition of claim 1 , wherein the precursor has the formula Nb(R 5 Cp) 2 (N R, R′ , N R″, R′″ -gnd) or Nb(R 5 Cp) 2 (N R , N R″ -gnd) when R═R′ and R″═R′
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- C01B21/0617Primary
with vanadium, niobium or tantalum · CPC title
Use of plasma, radiation or electromagnetic fields · CPC title
characterized by the use of precursors specially adapted for ALD · CPC title
Nitrides {(C23C16/303 takes precedence)} · CPC title
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- What does patent US10023462B2 cover?
- Disclosed are Niobium Nitride film forming compositions, methods of synthesizing the same, and methods of forming Niobium Nitride films on one or more substrates via vapor deposition processes using the Niobium Nitride film forming precursors.
- Who is the assignee on this patent?
- Air Liquide
- What technology area does this patent fall under?
- Primary CPC classification C01B21/0617. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jul 17 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 5 related publications on this page (citations in our corpus or others sharing the same primary CPC).