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Systems and methods for detecting defects on a wafer
US10605744B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10605744-B2 |
| Application number | US-201815865130-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 8, 2018 |
| Priority date | Jan 26, 2009 |
| Publication date | Mar 31, 2020 |
| Grant date | Mar 31, 2020 |
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- Title
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Abstract
Official abstract text for this publication.
Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state. In addition, the method includes combining the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer. The method further includes detecting defects on the wafer using the additional image data.
First claim
Opening claim text (preview).
What is claimed is: 1. A system configured to detect defects on a wafer, comprising: an inspection subsystem configured to generate output for a wafer by scanning the wafer using first and second optical states of the inspection subsystem, wherein the first and second optical states are defined by different values for at least one optical parameter of the inspection subsystem, and wherein the different values comprise different wavelengths; and a computer subsystem configured to generate first image data for the wafer using the output generated using the first optical state and second image data for the wafer using the output generated using the second optical state, combine the first image data and the second image data corresponding to substantially the same locations on the wafer thereby creating additional image data for the wafer, and detect defects on the wafer using the additional image data. 2. The system of claim 1 , wherein the different wavelengths are different wavelengths of illumination. 3. The system of claim 1 , wherein the different wavelengths are different wavelengths of collection or detection.
Assignees
Inventors
Classifications
- H10P74/203Primary
Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title
- G01N21/9501Primary
Semiconductor wafers (manufacturing processes per se of semiconductor devices implementing a measuring step H10P74/20) · CPC title
the measurements made in two or more directions, angles, positions · CPC title
Electricity · mapped topic
Structural arrangements therefor · CPC title
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Frequently asked questions
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- What does patent US10605744B2 cover?
- Systems and methods for detecting defects on a wafer are provided. One method includes generating output for a wafer by scanning the wafer with an inspection system using first and second optical states of the inspection system. The first and second optical states are defined by different values for at least one optical parameter of the inspection system. The method also includes generating fir…
- Who is the assignee on this patent?
- Kla Tencor Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P74/203. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Mar 31 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).