Infrared sensor and method for cooling bolometer infrared ray receiver of infrared sensor

Patent metadata

Field	Value
Publication number	US-10605667-B2
Application number	US-201816193152-A
Country	US
Kind code	B2
Filing date	Nov 16, 2018
Priority date	Dec 11, 2017
Publication date	Mar 31, 2020
Grant date	Mar 31, 2020

Abstract

An infrared sensor comprises a base substrate including a recess, a bolometer infrared ray receiver, and a Peltier device. The bolometer infrared ray receiver comprises a resistance variable layer, a bolometer first beam, and a bolometer second beam. The Peltier device comprises a Peltier first beam formed of a p-type semiconductor material and a Peltier second beam formed of an n-type semiconductor material. The Peltier device is in contact with a back surface of the bolometer infrared ray receiver. One end of each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam is connected to the base substrate. The bolometer infrared ray receiver and the Peltier device are suspended above the base substrate. Each of the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam has a phononic crystal structure including a plurality of through holes arranged regularly.

First claim

What is claimed is:

1. An infrared sensor comprising:
a base substrate including a recess;
a bolometer infrared ray receiver; and
a Peltier device, wherein:
the bolometer infrared ray receiver comprises:
a resistance variable layer in which resistance varies upon absorption of an infrared ray,
a bolometer first beam electrically connected to the resistance variable layer, and
a bolometer second beam electrically connected to the resistance variable layer,

the Peltier device is interposed between the bolometer infrared ray receiver and the recess in a cross sectional view,
a front surface of the bolometer infrared ray receiver is irradiated with the infrared ray,
the Peltier device comprises a Peltier first beam formed of a p-type semiconductor material, and a Peltier second beam formed of an n-type semiconductor material,
the Peltier device is in contact with a back surface of the bolometer infrared ray receiver,
one end of the bolometer first beam, one end of the bolometer second beam, one end of the Peltier first beam, and one end of the Peltier second beam are connected to the base substrate,
the bolometer infrared ray receiver, the Peltier device, the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam are suspended above the base substrate,
the bolometer first beam has a first phononic crystal structure including a plurality of through holes arranged regularly,
the bolometer second beam has a second phononic crystal structure including a plurality of through holes arranged regularly,
the Peltier first beam has a third phononic crystal structure including a plurality of through holes arranged regularly,
the Peltier second beam has a fourth phononic crystal structure including a plurality of through holes arranged regularly,
the plurality of through holes of the first phononic crystal structure are regularly arranged with a first period,
the plurality of through holes of the second phononic crystal structure are regularly arranged with a second period,
the plurality of through holes of the third phononic crystal structure are regularly arranged with a third period,
the plurality of through holes of the fourth phononic crystal structure are regularly arranged with a fourth period,
the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam respectively include a first domain, a second domain, a third domain, and a fourth domain,
the first domain, the second domain, the third domain, and the fourth domain respectively include the first phononic crystal structure, the second phononic crystal structure, the third phononic crystal structure, and the fourth phononic crystal structure,
the bolometer first beam, the bolometer second beam, the Peltier first beam, and the Peltier second beam respectively include a fifth domain, a sixth domain, a seventh domain, and an eighth domain,
in the fifth domain, a fifth phononic crystal structure including a plurality of through holes regularly arranged with a fifth period is formed,
in the sixth domain, a sixth phononic crystal structure including a plurality of through holes regularly arranged with a sixth period is formed,
in the seventh domain, a seventh phononic crystal structure including a plurality of through holes regularly arranged with a seventh period is formed,
in the eighth domain, an eighth phononic crystal structure including a plurality of through holes regularly arranged with an eighth period is formed,
as seen in a plan view, the first domain is interposed between the fifth domain and the resistance variable layer,
as seen in the plan view, the second domain is interposed between the sixth domain and the resistance variable layer,
as seen in the plan view, the third domain is interposed between the seventh domain and the resistance variable layer,
as seen in the plan view, the fourth domain is interposed between the eighth domain and the resistance variable layer,
the fifth period is greater than the first period,
the sixth period is greater than the second period,
the seventh period is greater than the third period, and
the eighth period is greater than the fourth period.

2. The infrared sensor according to claim 1 , wherein
the first phononic crystal structure is provided at a first section between the one end of the bolometer first beam and one end of the resistance variable layer in the bolometer first beam as seen in a plan view,
the second phononic crystal structure is provided at a second section between the one end of the bolometer second beam and another end of the resistance variable layer in the bolometer second beam as seen in the plan view,
the third phononic crystal structure is provided at a third section between the one end of the Peltier first beam and the one end of the resistance variable layer in the Peltier first beam as seen in the plan view, and
the fourth phononic crystal structure is provided at a fourth section between the one end of the Peltier second beam and another end of the resistance variable layer in the Peltier second beam as seen in the plan view.

3. The infrared sensor according to claim 1 , wherein
the first period, the second period, the third period, and the fourth period are equal to one another.

4. The infrared sensor according to claim 1 , wherein
another end of the Peltier first beam is connected to another end of the Peltier second beam, to form an interface between the Peltier first beam and the Peltier second beam, and
the interface is interposed between the resistance variable layer and the recess.

5. The infrared sensor according to claim 4 , wherein
the resistance variable layer has four regions being equal to one another in area as seen in a plan view, and
the interface is in contact with at least two of the regions.

6. The infrared sensor according to claim 1 , wherein
another end of the Peltier first beam is unconnected to another end of the Peltier second beam,
the Peltier first beam is electrically connected to the Peltier second beam with a first wire, and
the first wire is interposed between the resistance variable layer and the recess.

7. The infrared sensor according to claim 1 , wherein
in the first domain, among the plurality of through holes regularly arranged with the first period in the first domain, a plurality of through holes regularly arranged with a ninth period different from the first period are formed,
in the second domain, among the plurality of through holes regularly arranged with the second period in the second domain, a plurality of through holes regularly arranged with a tenth period different from the second period are formed,
in the third domain, among the plurality of through holes regularly arranged with the third period in the third domain, a plurality of through holes regularly arranged with an eleventh period different from the third period are formed,
in the fourth domain, among the plurality of through holes regularly arranged with the fourth period in the fourth domain, a plurality of through holes regularly arranged with a twelfth period different from the fourth period are formed,
in the fifth domain, among the plurality of through holes regularly arranged with the filth period in the fifth domain, a plurality of through holes regularly arranged with a thirteenth period different from the fifth period are formed,
in the sixth domain, among the plurality of through holes regularly arranged with the sixth period in the sixth domain, a plurality of through holes regularly arranged with a fourteenth period different from the sixth period are formed,
in the seventh domain, among the plurality of through holes regularly arranged with the seventh period in the seventh do

Assignees

• Panasonic Ip Man Co Ltd

Inventors

• Kawasaki Takashi
• Takahashi Kouhei
• Tambo Naoki
• Naito Yasuyuki

Classifications

• G01J5/061 Primary

  by controlling the temperature of the apparatus or parts thereof, e.g. using cooling means or thermostats · CPC title

• G01J5/023 Primary

  Particular leg structure or construction or shape; Nanotubes · CPC title

• G01J2005/062

  Peltier · CPC title

• G01J5/024

  Special manufacturing steps or sacrificial layers or layer structures · CPC title

• G01J5/20

  using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices · CPC title