Chemical mechanical polishing method for tungsten

Patent metadata

Field	Value
Publication number	US-10600655-B2
Application number	US-201815961133-A
Country	US
Kind code	B2
Filing date	Apr 24, 2018
Priority date	Aug 10, 2017
Publication date	Mar 24, 2020
Grant date	Mar 24, 2020

Abstract

A process for chemical mechanical polishing a substrate containing tungsten to at least reduce dishing of tungsten features of 100 μm or less. The process includes providing a substrate containing tungsten features of 100 μm or less; providing a polishing composition, containing, as initial components: water; an oxidizing agent; arginine or salts thereof; a dicarboxylic acid, a source of iron ions; a colloidal silica abrasive; and, optionally, a pH adjusting agent; and, optionally, a surfactant; and, optionally, a biocide; providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the tungsten is polished away from the substrate and yet at least reducing dishing of the tungsten features of 100 μm or less.

First claim

What is claimed is:

1. A method of chemical mechanical polishing tungsten, comprising:
providing a substrate comprising tungsten and a dielectric, wherein tungsten features have dimensions of 100 μm to 0.25 μm;
providing a chemical mechanical polishing composition, comprising, as initial components:
water;
an oxidizing agent;
an arginine salt selected from the group consisting of arginine malate, N-methyl-L-arginine acetate and mixtures thereof in amounts of 10 to 500 ppm;
a colloidal silica abrasive having a negative zeta potential;
a dicarboxylic acid,
a source of iron (III) ions; and,
optionally, a pH adjusting agent;
optionally, a surfactant;
optionally, a biocide;
providing a chemical mechanical polishing pad, having a polishing surface;
creating dynamic contact at an interface between the chemical mechanical polishing pad and the substrate; and
dispensing the chemical mechanical polishing composition onto the polishing surface of the chemical mechanical polishing pad at or near the interface between the chemical mechanical polishing pad and the substrate to remove at least some of the tungsten and reduce dishing of the tungsten features and reduce corrosion of the tungsten features.

2. The method of claim 1 , wherein the chemical mechanical polishing composition provided has a tungsten removal rate of ≥1500 Å/min with a platen speed of 80 revolutions per minute, a carrier speed of 81 revolutions per minute, a chemical mechanical polishing composition flow rate of 125 mL/min, a nominal down force of 21.4 kPa on a 200 mm polishing machine; and, wherein the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

3. The method of claim 1 , wherein the chemical mechanical polishing composition, provided comprises, as initial components:
the water;
0.01 to 10 wt % of the oxidizing agent, wherein the oxidizing agent is hydrogen peroxide;
30 to 500 ppm of the arginine salt selected from the group consisting of arginine malate, N-methyl-L-arginine acetate and mixtures thereof;
0.01 to 15 wt % of the colloidal silica abrasive having the negative zeta potential;
1 to 2,600 ppm of the dicarboxylic acid;
100 to 1,100 ppm of the source of iron (III) ions, wherein the source of iron (III) ions is ferric nitrate; and,
optionally, the pH adjusting agent;
optionally, the surfactant;
optionally, the biocide; and,
wherein the chemical mechanical polishing composition has a pH of 1 to 7.

4. The method of claim 3 , wherein the chemical mechanical polishing composition provided has a tungsten removal rate of ≥1500 Å/min with a platen speed of 80 revolutions per minute, a carrier speed of 81 revolutions per minute, a chemical mechanical polishing composition flow rate of 125 mL/min, a nominal down force of 21.4 kPa on a 200 mm polishing machine; and, wherein the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

5. The method of claim 1 , wherein the chemical mechanical polishing composition, provided comprises, as initial components:
the water;
0.1 to 5 wt % of the oxidizing agent, wherein the oxidizing agent is hydrogen peroxide;
30 to 250 ppm of the arginine salt selected from the group consisting of arginine malate, N-methyl-L-arginine acetate and mixtures thereof;
0.05 to 10 wt % of the colloidal silica abrasive having the negative zeta potential;
100 to 1,400 ppm of the dicarboxylic acid;
150 to 1000 ppm of the source of iron (III) ions, wherein the source of iron (III) ions is ferric nitrate; and,
optionally, the pH adjusting agent;
optionally, an anionic ether sulfate surfactant; and,
wherein the chemical mechanical polishing composition has a pH of 1.5 to 4.5.

6. The method of claim 5 , wherein the chemical mechanical polishing composition provided has a tungsten removal rate of ≥1500 Å/min with a platen speed of 80 revolutions per minute, a carrier speed of 81 revolutions per minute, a chemical mechanical polishing composition flow rate of 125 mL/min, a nominal down force of 21.4 kPa on a 200 mm polishing machine; and, wherein the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

7. The method of claim 1 , wherein the chemical mechanical polishing composition, provided comprises, as initial components:
the water;
0.1 to 3 wt % of the oxidizing agent, wherein the oxidizing agent is hydrogen peroxide;
30 to 250 ppm of the arginine salt selected from the group consisting of arginine malate, N-methyl-L-arginine acetate and mixtures thereof;
0.1 to 5 wt % of the colloidal silica abrasive having the negative zeta potential;
120 to 1,350 ppm of the dicarboxylic acid, wherein the dicarboxylic acid is malonic acid;
150 to 850 ppm of the source of iron (III) ions, wherein the source of iron (III) ions is ferric nitrate; and,
optionally, the pH adjusting agent;
optionally, an anionic ether sulfate surfactant; and,
wherein the chemical mechanical polishing composition has a pH of 1.5 to 3.5.

8. The method of claim 7 , wherein the chemical mechanical polishing composition provided has a tungsten removal rate of ≥1500 Å/min with a platen speed of 80 revolutions per minute, a carrier speed of 81 revolutions per minute, a chemical mechanical polishing composition flow rate of 125 mL/min, a nominal down force of 21.4 kPa on a 200 mm polishing machine; and, wherein the chemical mechanical polishing pad comprises a polyurethane polishing layer containing polymeric hollow core microparticles and a polyurethane impregnated non-woven subpad.

9. The method of claim 7 , wherein the colloidal silica abrasive is a mixed colloidal silica abrasive comprising small mean particles sizes in combination with large mean particle sizes.

10. The method of claim 9 , wherein the mixed colloidal silica abrasive comprises small mean particles of 40-50 nm and large mean particles of 70-100 nm.

Assignees

• Rohm & Haas Elect Materials Cmp Holdings Inc

Inventors

• Peng Jia-De
• Ho Lin-Chen
• Hsu Syin

Classifications

• C09G1/02

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• B24B57/02

  for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents · CPC title

• B24B37/044 Primary

  characterised by the composition of the lapping agent · CPC title

• B24B37/07 Primary

  characterised by the movement of the work or lapping tool · CPC title

• H01L23/53257

  Electricity · mapped topic