Semiconductor device and electronic device

Patent metadata

Field	Value
Publication number	US-10600469-B2
Application number	US-201816017539-A
Country	US
Kind code	B2
Filing date	Jun 25, 2018
Priority date	Jun 26, 2017
Publication date	Mar 24, 2020
Grant date	Mar 24, 2020

Abstract

An object is to shorten the time for rewriting data in memory cells. A memory module includes a first memory cell, a second memory cell, a selection transistor, and a wiring WBL1. The first memory cell includes a first memory node. The second memory cell includes a second memory node. One end of the first memory cell is electrically connected to the wiring WBL1 through the selection transistor. The other end of the first memory cell is electrically connected to one end of the second memory cell. The other end of the second memory cell is electrically connected to the wiring WBL1. When the selection transistor is on, data in the first memory node is rewritten by a signal supplied through the selection transistor to the wiring WBL1. When the selection transistor is off, data in the first memory node is rewritten by a signal supplied through the second memory node to the wiring WBL1.

First claim

What is claimed is:

1. A semiconductor device comprising a memory module comprising:
a first memory cell comprising a first memory node;
a second memory cell comprising a second memory node;
a selection transistor; and
a first wiring,
wherein:
one end of the first memory cell is electrically connected to the first wiring through the selection transistor,
the other end of the first memory cell is electrically connected to one end of the second memory cell,
the other end of the second memory cell is electrically connected to the first wiring,
each of the first memory node and the second memory node is configured to retain a voltage as a signal,
when the selection transistor is on, the first memory node is configured so that the voltage retained in the first memory node is rewritten through the selection transistor by a signal supplied to the first wiring, and the second memory node is configured so that the voltage retained in the second memory node is rewritten through the selection transistor and the first memory node by a signal supplied to the first wiring, and
when the selection transistor is off, the first memory node is configured so that the voltage retained in the first memory node is rewritten through the second memory node by a signal supplied to the first wiring, and the second memory node is configured so that the voltage retained in the second memory node is rewritten by a signal supplied to the first wiring.

2. The semiconductor device according to claim 1 , wherein:
the memory module further comprises a second wiring, a third wiring, and a fourth wiring,
the first memory cell further comprises a first transistor and a first capacitor,
the second memory cell further comprises a second transistor and a second capacitor,
the first memory node is formed by electrical connection between one of a source and a drain of the first transistor and one electrode of the first capacitor,
the second memory node is formed by electrical connection between one of a source and a drain of the second transistor and one electrode of the second capacitor,
one of a source and a drain of the selection transistor is electrically connected to the first wiring,
the other of the source and the drain of the selection transistor is electrically connected to the first memory node,
a gate of the selection transistor is electrically connected to the fourth wiring,
the other of the source and the drain of the first transistor is electrically connected to the second memory node,
a gate of the first transistor is electrically connected to the second wiring,
the other of the source and the drain of the second transistor is electrically connected to the first wiring, and
a gate of the second transistor is electrically connected to the third wiring.

3. The semiconductor device according to claim 2 ,
wherein:
the memory module further comprises a fifth wiring,
the one end of the first memory cell is electrically connected to the fifth wiring through the selection transistor, and
when the selection transistor is on, the first memory node is configured so that the voltage retained in the first memory node is rewritten through the selection transistor by a signal supplied to the fifth wiring, and the second memory node is configured so that the voltage retained in the second memory node is rewritten by a signal supplied to the first wiring.

4. The semiconductor device according to claim 2 , wherein at least one of the first transistor, the second transistor, and the selection transistor comprises a semiconductor layer containing a metal oxide.

5. The semiconductor device according to claim 4 , wherein the semiconductor layer of the first transistor and the semiconductor layer of the second transistor are formed in one opening.

6. The semiconductor device according to claim 4 , wherein the first transistor, the second transistor, or the selection transistor comprising the semiconductor layer containing the metal oxide comprises a backgate.

7. An electronic device comprising:
the semiconductor device according to claim 1 ; and
a housing.

8. A semiconductor device comprising:
a first selection transistor; and
memory cells connected in series, each of the memory cells comprising:
a rewrite transistor comprising a gate connected to a rewrite word line;
a read transistor; and
a capacitor comprising:
a first terminal connected to a first terminal of the rewrite transistor and a gate of the read transistor; and
a second terminal connected to a read word line,

wherein:
the rewrite transistors in the memory cells are connected in series,
the read transistors in memory cells are connected in series, and
the first selection transistor is connected to the first terminal of the rewrite transistor in a first endmost memory cell among the memory cells.

9. The semiconductor device according to claim 8 , wherein the first terminal of the rewrite transistor in the first endmost memory cell is connected through the first selection transistor to a second terminal of the rewrite transistor in a second endmost memory cell among the memory cells which is positioned opposite to the first endmost memory cell.

10. The semiconductor device according to claim 8 , wherein the first selection transistor comprises a backgate.

11. The semiconductor device according to claim 8 , wherein the rewrite transistor in each of the memory cells comprises a backgate.

12. The semiconductor device according to claim 8 , wherein the read transistor in each of the memory cells comprises a backgate.

13. The semiconductor device according to claim 8 , further comprising a second selection transistor and a third selection transistor between which the read transistors are connected in series.

Assignees

• Semiconductor Energy Lab

Inventors

• Kimura Hajime
• Fukutome Takahiro

Classifications

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P76/204

  of organic photoresist masks · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/69391

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title