Magnetoresistance effect device and magnetoresistance effect module

Patent metadata

Field	Value
Publication number	US-10593459-B2
Application number	US-201716306935-A
Country	US
Kind code	B2
Filing date	Sep 14, 2017
Priority date	Sep 14, 2016
Publication date	Mar 17, 2020
Grant date	Mar 17, 2020

Abstract

A magnetoresistance effect device includes: a first magnetoresistance effect element including a first ferromagnetic layer, a second ferromagnetic layer, and a first spacer layer, a metal layer, a first electrode, an input terminal, an output terminal, and a reference potential terminal, wherein the first ferromagnetic layer, the first spacer layer, the second ferromagnetic layer, and the first electrode are disposed in this order, the second ferromagnetic layer is in electrical contact with the first electrode, which is connected to the output terminal configured to output a high-frequency signal, the metal layer is connected to the input and reference potential terminals so that a high-frequency signal flowing from the input terminal to the metal layer flows to the reference potential terminal, which is in electrical contact with the first ferromagnetic layer, and the first magnetoresistance effect element has an application terminal configured to apply a DC current or a DC voltage.

First claim

What is claimed is:

1. A magnetoresistance effect device comprising:
a first magnetoresistance effect element which includes a first magnetization free layer, a first magnetization fixed layer, and a first spacer layer;
a metal layer;
a first electrode;
an input terminal;
an output terminal; and
a reference potential terminal,
wherein the metal layer, the first magnetization free layer, the first spacer layer, the first magnetization fixed layer, and the first electrode are disposed in this order,
wherein the first magnetization fixed layer is in electrical contact with the first electrode,
wherein the first electrode is connected to the output terminal configured to output a high-frequency signal,
wherein the metal layer includes a first region which is overlapped with the first magnetization free layer when viewed from a lamination direction of the first magnetization free layer,
wherein the metal layer is connected to the input terminal and the reference potential terminal so that a high-frequency signal flowing from the input terminal to the metal layer flows to the reference potential terminal through the first region, and
wherein the first magnetoresistance effect element is provided with an application terminal configured to apply a DC current or a DC voltage.

2. The magnetoresistance effect device according to claim 1 ,
wherein an impedance of the first magnetoresistance effect element is higher than an impedance of the metal layer.

3. The magnetoresistance effect device according to claim 1 , further comprising:
a frequency setting mechanism which is able to change a resonance frequency of the first magnetoresistance effect element.

4. The magnetoresistance effect device according to claim 1 , further comprising:
a second magnetoresistance effect element,
wherein the second magnetoresistance effect element includes a second magnetization free layer, a second spacer layer, and a second magnetization fixed layer,
wherein the metal layer, the second magnetization free layer, the second spacer layer, the second magnetization fixed layer, and the first electrode are disposed in this order,
wherein the metal layer includes a second region which is overlapped with the second magnetization free layer when viewed from a lamination direction of the second magnetization free layer, and
wherein the metal layer is connected to the input terminal and the reference potential terminal so that a high-frequency signal flowing from the input terminal to the metal layer flows to the reference potential terminal through the second region.

5. The magnetoresistance effect device according to claim 4 ,
wherein the resonance frequencies of the first magnetization free layer and the second magnetization free layer are different from each other.

6. The magnetoresistance effect device according to claim 1 , further comprising:
a second electrode; and
a third magnetoresistance effect element,
wherein the third magnetoresistance effect element includes a third magnetization free layer, a third spacer layer, and a third magnetization fixed layer,
wherein the third magnetization fixed layer is in electrical contact with the second electrode,
wherein the first magnetization free layer, the metal layer, the third magnetization free layer, the third spacer layer, the third magnetization fixed layer, and the second electrode are disposed in this order,
wherein the metal layer includes a third region which is overlapped with the third magnetization free layer when viewed from a lamination direction of the third magnetization free layer,
wherein the metal layer is connected to the input terminal and the reference potential terminal so that a high-frequency signal flowing from the input terminal to the metal layer flows to the reference potential terminal through the third region,
wherein the second electrode is connected to the output terminal, and
wherein the third magnetoresistance effect element is provided with a part configured to apply a DC current or a DC voltage.

7. A magnetoresistance effect module comprising:
the magnetoresistance effect device according to claim 1 ; and
a DC current source or a DC voltage source,
wherein the DC current source or the DC voltage source is connected to the application terminal.

8. A high-frequency filter that uses the magnetoresistance effect device according to claim 1 .

9. The magnetoresistance effect device according to claim 1 ,
wherein a relative angle between a magnetization direction of the first magnetization free layer and a direction of a high-frequency current flowing in the metal layer is equal to or larger than 150° and equal to or smaller than 180° or is equal to or larger than 0° and equal to or smaller than 30°.

10. The magnetoresistance effect device according to claim 9 ,
wherein a relative angle between a magnetization direction of the first magnetization free layer and a magnetization direction of the first magnetization fixed layer is equal to or larger than 90° and equal to or smaller than 150°.

11. A magnetoresistance effect device comprising:
a first magnetoresistance effect element which includes a first ferromagnetic layer, a second ferromagnetic layer, and a first spacer layer;
a metal layer;
a first electrode;
an input terminal;
an output terminal; and
a reference potential terminal,
wherein the first ferromagnetic layer, the first spacer layer, the second ferromagnetic layer, and the first electrode are disposed in this order,
wherein the second ferromagnetic layer is in electrical contact with the first electrode and the first electrode is connected to the output terminal configured to output a high-frequency signal,
wherein the metal layer is connected to the input terminal and the reference potential terminal so that a high-frequency signal flowing from the input terminal to the metal layer flows to the reference potential terminal and the first ferromagnetic layer is in electrical contact with the reference potential terminal, and
wherein the first magnetoresistance effect element is provided with an application terminal configured to apply a DC current or a DC voltage.

12. The magnetoresistance effect device according to claim 11 ,
wherein an impedance between the input terminal and the output terminal is higher than an impedance between the input terminal and the reference potential terminal.

13. The magnetoresistance effect device according to claim 11 ,
wherein the first ferromagnetic layer is electrically connected to the metal layer so that a high-frequency signal flows from the input terminal to the output terminal through the first magnetoresistance effect element and a resistance R MTJ of the first magnetoresistance effect element, a resistance R lead of the metal layer, and a characteristic impedance Z 0 satisfy Equation (1).

38
≥

R
MTJ

R
lead

+

Z
0

R
lead

+

Assignees

• Tdk Corp

Inventors

• Suzuki Tsuyoshi

Classifications

• H03H2/00

  Networks using elements or techniques not provided for in groups H03H3/00 - H03H21/00 · CPC title

• H01F10/3254

  the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ] · CPC title

• H01F10/329 Primary

  Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect · CPC title

• H01F10/3286

  Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy · CPC title

• H01F10/324

  Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer · CPC title