Selective deposition of metal silicides

Patent metadata

Field	Value
Publication number	US-10586707-B2
Application number	US-201816189429-A
Country	US
Kind code	B2
Filing date	Nov 13, 2018
Priority date	May 26, 2017
Publication date	Mar 10, 2020
Grant date	Mar 10, 2020

Abstract

Embodiments of the disclosure relate to selective metal silicide deposition methods. In one embodiment, a substrate having a silicon containing surface is heated and the silicon containing surface is hydrogen terminated. The substrate is exposed to sequential cycles of a MoF6 precursor and a Si2H6 precursor which is followed by an additional Si2H6 overdose exposure to selectively deposit a MoSix material comprising MoSi2 on the silicon containing surface of the substrate. Methods described herein also provide for selective native oxide removal which enables removal of native oxide material without etching bulk oxide materials.

First claim

What is claimed is:

1. A substrate processing method, comprising:
exposing a silicon containing substrate comprising bulk silicon oxide and native silicon oxide to a plasma formed from an NF 3 precursor and an NH 3 precursor to selectively remove the native silicon oxide from the substrate, the exposing comprising:
heating the substrate to a temperature of between 40° C. and 50° C.; and
exposing the substrate to the plasma for a period of time less than 40 seconds;

heating the substrate to a first temperature;
exposing the substrate to a plasma comprising hydrogen;
exposing the substrate to a first dosage of a MoF 6 precursor;
exposing the substrate to a second dosage of a Si 2 H 6 precursor;
sequentially cycling the exposing the substrate to the first dosage and the exposing the substrate to the second dosage; and
after the sequential cycling, exposing the substrate to a third dosage of the Si 2 H 6 precursor.

2. The method of claim 1 , further comprising:
annealing the substrate after the exposing the substrate to the third dosage at a second temperature of between 500° C. and 550° C.

3. The method of claim 1 , wherein the first temperature is between 100° C. and 150° C.

4. The method of claim 1 , wherein the sequential cycling is performed less than 10 times.

5. The method of claim 4 , wherein the sequential cycling is performed 5 times.

6. The method of claim 1 , wherein the plasma comprising hydrogen is formed from precursors selected form the group consisting of NF 3 , NH 3 , and H.

7. The method of claim 1 , wherein a nitrogen purge process utilizing N 2 is performed during the sequential cycling.

8. The method of claim 1 , wherein the first dosage is performed for a duration of between 10 ms and 100 ms.

9. The method of claim 8 , wherein the first dosage comprises a MoF 6 flow rate of between 1 MegaL and 10 MegaL.

10. The method of claim 8 , wherein the second dosage is performed for a duration of between 1 ms and 50 ms.

11. The method of claim 10 , wherein the second dosage comprises a Si 2 H 6 flow rate of between 1 MegaL and 10 MegaL.

12. The method of claim 11 , wherein the third dosage comprises a Si 2 H 6 flow rate of between 20 MegaL and 50 MegaL.

13. The method of claim 12 , wherein the third dosage comprises between 3 pulses and 10 pulses of Si 2 H 6 .

14. The method of claim 1 , further comprising:
selectively depositing a MoSi x film on the silicon containing surface at a growth rate of 1.2 nm per sequential cycle.

15. A substrate processing method, comprising:
positioning a silicon containing substrate comprising bulk silicon oxide and native silicon oxide on a heater in a reaction chamber having chamber walls;
exposing the substrate to a plasma formed from an NF 3 precursor and an NH 3 precursor to selectively remove the native silicon oxide from the substrate, the exposing comprising:
heating the substrate to a temperature of between 40° C. and 50° C.; and
exposing the substrate to the plasma for a period of time less than about 40 seconds;

heating the substrate on the heater to a first temperature;
maintaining the chamber walls at a second temperature less than the first temperature;
exposing a silicon containing surface of the substrate to hydrogen;
exposing the substrate to a first dosage of a MoF 6 precursor;
exposing the substrate to a second dosage of a Si 2 H 6 precursor;
sequentially cycling the exposing the substrate to the first dosage and the exposing the substrate to the second dosage; and
after the sequential cycling, exposing the substrate to a third dosage of the Si 2 H 6 precursor.

Assignees

• Applied Materials Inc
• Univ California

Inventors

• Hung Raymond
• Kim Namsung
• Nemani Srinivas D
• Yieh Ellie Y
• CHOI Jong
• Ahles Christopher
• Kummel Andrew

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P14/432

  using selective deposition · CPC title

• H10D64/0112 Primary

  using conductive layers comprising silicides · CPC title

• C23C16/42 Primary

  Silicides · CPC title