Substrate processing apparatus and substrate processing method using substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-10580668-B2
Application number	US-201916373228-A
Country	US
Kind code	B2
Filing date	Apr 2, 2019
Priority date	Mar 17, 2014
Publication date	Mar 3, 2020
Grant date	Mar 3, 2020

Abstract

In a substrate processing apparatus, a phosphoric acid aqueous solution is supplied to a processor, and a liquid collection from the processor is concurrently performed. Further, a silicon concentration is adjusted, to supply an adjusted processing liquid to the processor. Thus, a phosphoric acid aqueous solution film is formed on the substrate. The liquid film is heated by a heating device. The heating device has lamp heaters in a casing made of a silica glass. The phosphoric acid aqueous solution on the substrate is irradiated with infrared rays. A nitrogen gas flowing in a gas passage formed in the casing is discharged towards a position outside an outer periphery of the substrate.

First claim

We claim:

1. A substrate processing method in a substrate processing apparatus including a processing unit having a processing liquid nozzle that supplies a processing liquid to a substrate, a first tank, a second tank, a third tank, and a path switcher that switches a path of the processing liquid among the processing unit, the first tank, the second tank, and the third tank, the method comprising:
performing a supply operation of supplying the processing liquid from the first tank to the processing liquid nozzle of the processing unit;
performing a collection operation of collecting the processing liquid from the processing unit to the second tank in parallel with the supply operation;
performing an adjustment operation of adjusting concentration of the processing liquid stored in the third tank in parallel with the supply operation and the collection operation by the second tank;
supplying the adjusted processing liquid from the third tank to the first tank in parallel with the supply operation after the adjustment operation by the third tank is finished;
performing a collection operation of collecting the processing liquid from the processing unit to the third tank in parallel with the supply operation after the adjusted processing liquid is supplied from the third tank to the first tank;
performing an adjustment operation of adjusting concentration of the processing liquid stored in the second tank in parallel with the supply operation and the collection operation by the third tank;
supplying the adjusted processing liquid from the second tank to the first tank in parallel with the supply operation after the adjustment operation by the second tank is finished;
switching the path switcher such that the collection operation by the second tank and the collection operation by the third tank are performed alternately; and
switching the path switcher such that the adjustment operation by the third tank and the supply operation to the first tank, and the adjustment operation by the second tank and the supply operation to the first tank are performed alternately.

2. The substrate processing method according to claim 1 , wherein
the adjustment operation by the third tank includes a first new liquid addition operation of adding a new processing liquid to the third tank, and
the adjustment operation by the second tank includes a second new liquid addition operation of adding a new processing liquid to the second tank.

3. The substrate processing method according to claim 2 , wherein
the first new liquid addition operation includes supplying a processing liquid produced by a new liquid supply device to the third tank, and
the second new liquid addition operation includes supplying the processing liquid produced by the new liquid supply device to the second tank.

4. The substrate processing method according to claim 3 , further comprising:
detecting the concentration of the processing liquid in the third tank by a first concentration meter; and
detecting the concentration of the processing liquid in the second tank by a second concentration meter,
wherein the first new liquid supply operation includes producing a processing liquid having a concentration higher than a reference concentration by the new liquid supply device to supply the produced processing liquid to the third tank when the concentration detected by the first concentration meter is lower than the reference concentration, and producing a processing liquid having a concentration lower than the reference concentration by the new liquid supply device to supply the produced processing liquid to the third tank when the concentration detected by the first concentration meter is higher than the reference concentration, and
the second new liquid supply operation includes producing a processing liquid having a concentration higher than the reference concentration by the new liquid supply device to supply the produced processing liquid to the second tank when the concentration detected by the second concentration meter is lower than the reference concentration, and producing a processing liquid having a concentration lower than the reference concentration by the new liquid supply device to supply the produced processing liquid to the second tank when the concentration detected by the second concentration meter is higher than the reference concentration.

5. The substrate processing method according to claim 1 , wherein
the substrate includes a first film formed of a first material, and a second film formed of a second material,
the processing liquid includes a component that selectively etches the first material at a higher rate than the second material, and
the adjustment operation by the second tank and the adjustment operation by the third tank each include an operation of adjusting concentration of the component in the processing liquid.

6. The substrate processing method according to claim 5 , wherein
the first material includes silicon nitride, and the second material includes silicon oxide,
the processing liquid includes silicon and a phosphoric acid aqueous solution, and
the adjustment operation by the second tank and the adjustment operation by the third tank each include adjusting the concentration of the component in the processing liquid.

7. The substrate processing method according to claim 6 , wherein
the adjustment operation by the second tank and the adjustment operation by the third tank each include adjusting at least one of concentration of the phosphoric acid aqueous solution and concentration of the silicon in the processing liquid.

8. The substrate processing method according to claim 6 , wherein
the adjustment operation by the third tank includes a first new liquid addition operation of adding new silicon and a new phosphoric acid aqueous solution from a new liquid supply device to the third tank, and
the adjustment operation by the second tank includes a second new liquid addition operation of adding the new silicon and the new phosphoric acid aqueous solution from the new liquid supply device to the second tank.

9. The substrate processing method according to claim 8 , further comprising producing the new processing liquid by mixing a silicon liquid concentrate and a phosphoric acid aqueous solution at a predetermined ratio in the new liquid supply device.

10. The substrate processing method according to claim 9 , wherein
the producing the new processing liquid includes changing a mixing ratio based on the concentration of the processing liquid in the third tank in the first new liquid addition operation, and changing a mixing ratio based on the concentration of the processing liquid in the second tank in the second new liquid addition operation.

11. A substrate processing method using a substrate processing apparatus, wherein
the substrate processing apparatus includes
a processing unit that includes a processing liquid nozzle that supplies a processing liquid to a substrate, and
a plurality of tanks that include a supply tank, an adjustment tank and a collection tank,
the substrate processing method comprising
performing in parallel a supply operation for supplying the processing liquid from the supply tank to the processing liquid nozzle, a collection operation for collecting the processing liquid from the processing unit to the collection tank, and an adjustment operation for adjusting concentration of the processing liquid stored in the adjustment tank,
the performing in parallel the supply operation, the collection operation and the adjustment operation including:
changing a path of the processing liquid such that the collection tank is changed to the adjustment tank after the co

Assignees

• Screen Holdings Co Ltd

Inventors

• Hinode Taiki
• Ota Takashi
• Saito Kazuhide
• Yamada Kunio

Classifications

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P72/0402 Primary

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H01L21/0206

  Electricity · mapped topic