Method for measuring silicon concentration in a phosphoric acid aqueous solution
US-2017160181-A1 · Jun 8, 2017 · US
Substrate processing device and method of manufacturing semiconductor device
US10008400B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10008400-B2 |
| Application number | US-201715449308-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 3, 2017 |
| Priority date | Sep 16, 2016 |
| Publication date | Jun 26, 2018 |
| Grant date | Jun 26, 2018 |
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Abstract
Official abstract text for this publication.
A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provided on a substrate. The second container stores a second liquid containing water. The control unit controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid.
First claim
Opening claim text (preview).
What is claimed is: 1. A substrate processing device, comprising: a first container configured to store a first liquid in which an acid liquid containing phosphoric acid and water are mixed, the first liquid being capable of etching a metal film provided on a substrate; a second container configured to store a second liquid containing water; and a control unit that controls supply of the second liquid from the second container to the first container such that a water concentration of the first liquid increases over time corresponding to change in a concentration of the phosphoric acid in the first liquid. 2. The substrate processing device according to claim 1 , further comprising: a water concentration meter for detecting the water concentration, wherein the control unit controls the supply of the second liquid such that a detection value of the water concentration meter matches a set value of the water concentration that is preset for each supply start time of the second liquid. 3. The substrate processing device according to claim 1 , further comprising: a phosphoric acid concentration meter for detecting the concentration of the phosphoric acid, a viscometer for detecting a viscosity of the first liquid, or a specific gravity meter for detecting a specific gravity of the first liquid, wherein the control unit controls the supply of the second liquid based on a detection result of the phosphoric acid concentration meter, the viscometer or the specific gravity meter. 4. The substrate processing device according to claim 1 , further comprising: a circulation path for circulating the first liquid with respect to the first container, and a current meter for detecting a flow velocity of the first liquid flowing through the circulation path, wherein the control unit controls the supply of the second liquid based on a detection result of the current meter. 5. The substrate processing device according to claim 1 , wherein the control unit intermittently supplies the second liquid based on a supply amount which is preset so as to increase over time. 6. The substrate processing device according to claim 1 , wherein the control unit intermittently supplies the second liquid at intervals which are preset so as to be shortened over time.
Assignees
Inventors
Classifications
with the semiconductor substrates being dipped in baths or vessels · CPC title
for wet etching · CPC title
with the semiconductor substrates being dipped in baths or vessels · CPC title
Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title
- H10P50/667Primary
by liquid etching only · CPC title
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- What does patent US10008400B2 cover?
- A substrate processing device capable of stabilizing an etching amount of a metal film provided on a substrate is provided. The substrate processing device includes a first container, a second container and a control unit. The first container stores a first liquid in which an acid solution containing phosphoric acid and water are mixed. The first liquid is capable of etching a metal film provid…
- Who is the assignee on this patent?
- Toshiba Memory Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P50/667. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Jun 26 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).