Differentially pumped reactive gas injector

Patent metadata

Field	Value
Publication number	US-10580628-B2
Application number	US-201715793506-A
Country	US
Kind code	B2
Filing date	Oct 25, 2017
Priority date	Aug 12, 2014
Publication date	Mar 3, 2020
Grant date	Mar 3, 2020

Abstract

One process used to remove material from a surface is ion etching. In certain cases, ion etching involves delivery of both ions and a reactive gas to a substrate. The disclosed embodiments permit local high pressure delivery of reactive gas to a substrate while maintaining a much lower pressure on portions of the substrate that are outside of the local high pressure delivery area. In many cases, the low pressure is achieved by providing an injection head that confines the high pressure reactant delivery to a small area and vacuums away excess reactants and byproducts as they leave this small area and before they enter the larger substrate processing region. The disclosed injection head may be used to increase throughput while minimizing deleterious collisions between ions and other species present in the substrate processing region. The disclosed injection head may also be used in other types of semiconductor wafer processing.

First claim

What is claimed is:

1. An injection head for providing reactants to a surface of a substrate, the injection head comprising:
a substrate-facing region comprising:
(i) a first reactant outlet region of a first reactant delivery conduit, and
(ii) a first suction region configured to be coupled to a first vacuum conduit; and

a housing covering the first reactant delivery conduit and the first vacuum conduit, wherein the housing includes an upper surface positioned opposite the substrate-facing region, wherein the upper surface is coated with a sputter-resistant material.

2. The injection head of claim 1 , wherein the sputter-resistant material comprises amorphous carbon.

3. The injection head of claim 1 , wherein the sputter-resistant material comprises silicon.

4. The injection head of claim 1 , wherein the sputter-resistant material comprises silicon oxide.

5. The injection head of claim 1 , wherein the sputter-resistant material comprises aluminum.

6. The injection head of claim 1 , wherein the sputter-resistant material comprises aluminum oxide.

7. The injection head of claim 1 , the substrate-facing region further comprising a second reactant outlet region of a second reactant delivery conduit.

8. The injection head of claim 7 , wherein the first reactant outlet region delivers a first reactant to the surface of the substrate and the second reactant outlet region delivers a second reactant to the surface of the substrate, the first and second reactants being different from one another.

9. The injection head of claim 1 , further comprising a heater that heats the injection head.

10. The injection head of claim 1 , further comprising a cooling element that cools the injection head.

11. The injection head of claim 1 , further comprising a movement mechanism that moves the substrate-facing region of the injection head within a plane parallel to the surface of the substrate.

12. The injection head of claim 11 , wherein the movement mechanism comprises a pivot point that allows the substrate-facing region of the injection head to move within the plane.

13. The injection head of claim 12 , wherein the injection head has a length and a width, each measured in the plane parallel to the surface of the substrate, wherein the width of the injection head varies along the length of the injection head.

14. The injection head of claim 1 , wherein the injection head has a length and a width, each measured in a plane parallel to the surface of the substrate, wherein the width of the injection head varies along the length of the injection head.

15. The injection head of claim 1 , wherein the first suction region has a substantially rectangular cross-section.

16. The injection head of claim 1 , the substrate-facing region further comprising a second reactant outlet region of either the first reactant delivery conduit or a second reactant delivery conduit, wherein the first suction region substantially surrounds both the first reactant outlet region and the second reactant outlet region.

17. The injection head of claim 1 , the substrate-facing region further comprising a second suction region configured to be coupled to the first vacuum conduit or a second vacuum conduit, wherein the first suction region substantially surrounds the first reactant outlet region, and wherein the second suction region substantially surrounds the first suction region.

18. The injection head of claim 17 , the substrate-facing region further comprising a third suction region configured to be coupled to the first vacuum conduit, the second vacuum conduit, or a third vacuum conduit, wherein the third suction region substantially surrounds the second suction region.

19. The injection head of claim 1 , wherein the injection head comprises a left portion and a right portion, the left and right portions each comprising a shape that is approximately semicircular, wherein each of the left and right portions is configured to pivot open and closed, wherein the left and right portions together form a shape that is approximately circular when they are closed together.

Assignees

• Lam Res Corp

Inventors

• Berry Iii Ivan L
• Lill Thorsten
• Reynolds Kenneth Reese

Classifications

• C23F4/00

  Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00 · CPC title

• H01J37/36 Primary

  for cleaning surfaces while plating with ions of materials introduced into the discharge, e.g. introduced by evaporation {(condensing of electrically charged vapour onto a surface for covering materials with metals C23C14/32)} · CPC title

• H01J37/32834

  Exhausting · CPC title

• H01J37/32816

  Pressure · CPC title

• H01J37/3244

  Gas supply means · CPC title