Ion injector and lens system for ion beam milling

Patent metadata

Field	Value
Publication number	US-9406535-B2
Application number	US-201414473863-A
Country	US
Kind code	B2
Filing date	Aug 29, 2014
Priority date	Aug 29, 2014
Publication date	Aug 2, 2016
Grant date	Aug 2, 2016

Abstract

The embodiments herein relate to methods and apparatus for performing ion etching on a semiconductor substrate, as well as methods for forming such apparatus. In some embodiments, an electrode assembly may be fabricated, the electrode assembly including a plurality of electrodes having different purposes, with each electrode secured to the next in a mechanically stable manner. Apertures may be formed in each electrode after the electrodes are secured together, thereby ensuring that the apertures are well-aligned between neighboring electrodes. In some cases, the electrodes are made from degeneratively doped silicon, and the electrode assembly is secured together through electrostatic bonding. Other electrode materials and methods of securing may also be used. The electrode assembly may include a hollow cathode emitter electrode in some cases, which may have a frustoconical or other non-cylindrical aperture shape. A chamber liner and/or reflector may also be present in some cases.

First claim

What is claimed is:

1. A method of making an electrode assembly for use in an ion beam etching reactor, the method comprising:
providing a first electrode, a second electrode and a third electrode;
providing and securing a first inter-electrode structure such that it is immobilized between the first electrode and the second electrode, and providing and securing a second inter-electrode structure such that it is immobilized between the second electrode and the third electrode, wherein the first electrode, second electrode, third electrode, first inter-electrode structure, and second inter-electrode structure are substantially vertically aligned with one another to form the electrode assembly; and
forming a plurality of apertures in the first electrode, second electrode and third electrode while the first inter-electrode structure and the second inter-electrode structure are immobilized in the electrode assembly.

2. The method of claim 1 , wherein securing one or more of the inter-electrode structures comprises providing an adhesive or glass frit to secure the one or more inter-electrode structures to one or more of the electrodes.

3. The method of claim 1 , wherein securing the first inter-electrode structure and securing the second inter-electrode structure comprise providing brackets or clamps that directly or indirectly secure the first inter-electrode structure and the second inter-electrode structure and that directly secure at least the first electrode and the third electrode.

4. The method of claim 1 , wherein the first, second and third electrodes and the first and second inter-electrode structures have coefficients of thermal expansion (CTE) that differ from one another by about 50% or less.

5. The method of claim 1 , wherein forming the apertures comprises drilling the apertures with a laser.

6. The method of claim 1 , wherein the apertures in the third electrode have a diameter that is between about 0-30% larger than a diameter of the apertures in the second electrode, and wherein the diameter of the apertures in the second electrode is between about 0-30% larger than a diameter of the apertures in the first electrode.

7. The method of claim 1 , wherein one or more of the electrodes have apertures which are tapered at an angle of about 10° or less.

8. The method of claim 1 , further comprising attaching a reflector to the third electrode, wherein the reflector blocks a direct line-of-sight through the electrode assembly.

9. The method of claim 1 , further comprising forming gas pathways in the first inter-electrode structure and/or in the second inter-electrode structure, wherein the gas pathways allow gas to escape outwards from an interior region of the electrode assembly.

10. The method of claim 1 , wherein one or more of the electrodes comprise degeneratively doped silicon, wherein securing the first inter-electrode structure comprises attaching the first inter-electrode structure to the first electrode and/or to the second electrode, and wherein securing the second inter-electrode structure comprises attaching the second inter-electrode structure to the second electrode and/or to the third electrode.

11. The method of claim 10 , wherein securing one or more of the inter-electrode structures comprises electrostatically bonding one or more of the inter-electrode structures to at least one of the electrodes.

12. The method of claim 1 , wherein forming apertures in first electrode, second electrode and third electrode further comprises forming apertures in the first inter-electrode material and in the second inter-electrode material, and further comprising after forming the apertures, immersing the electrode assembly in etching solution to thereby etch and remove at least a portion of the first inter-electrode material and a portion of the second inter-electrode material.

13. The method of claim 12 , wherein immersing the electrode assembly in etching solution results in the formation of support structures in contact with either the first electrode and the second electrode, or in contact with the second electrode and the third electrode, and wherein the support structures are formed from the first inter-electrode structure and the second inter-electrode structure.

14. The method of claim 1 , further comprising before or after forming the apertures, providing a fourth electrode to the electrode assembly, the fourth electrode being provided above the first electrode, wherein the fourth electrode forms a hollow cathode emitter electrode comprising a plurality of hollow cathode emitters.

15. The method of claim 14 , wherein the hollow cathode emitter electrode comprises an upper surface and a lower surface, the lower surface facing the first electrode, and further comprising, before, during, or after forming the apertures in the first, second, and third electrodes, forming a plurality of holes in the hollow cathode emitter electrode, each hole having a diameter that is larger at the upper surface and smaller toward the lower surface, wherein the holes are aligned with a position of the apertures after the apertures are formed in the first, second, and third electrodes.

16. The method of claim 14 , wherein the holes in the hollow cathode emitter electrode comprise a lower cylindrical portion and an upper variable diameter portion.

17. The method of claim 16 , wherein the upper variable diameter portion comprises a funnel shape.

Assignees

• Lam Res Corp

Inventors

• Berry Iii Ivan L
• Lill Thorsten

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H10P72/0421 Primary

  for drying etching · CPC title

• H01J37/32357

  Generation remote from the workpiece, e.g. down-stream · CPC title

• H01J37/3053 Primary

  for evaporating or etching · CPC title

• H01J37/32422

  Arrangement for selecting ions or species in the plasma · CPC title