Method of Producing a Semiconductor Arrangement
US-2016197164-A1 · Jul 7, 2016 · US
Stabilized, high-doped silicon carbide
US10577720B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10577720-B2 |
| Application number | US-201715398185-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 4, 2017 |
| Priority date | Jan 4, 2017 |
| Publication date | Mar 3, 2020 |
| Grant date | Mar 3, 2020 |
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- Title
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Abstract
Official abstract text for this publication.
Stabilized, high-doped silicon carbide is described. A silicon carbide crystal is grown on a substrate using chemical vapor deposition so that the silicon carbide crystal includes a dopant and the strain compensating component. The strain compensating component can be an isoelectronic element and/or an element with the same majority carrier type as the dopant. The silicon carbide crystal can then be cut into silicon carbide wafers. In some embodiments, the dopant is n-type and the strain compensating component is selected from a group comprising germanium, tin, arsenic, phosphorus, and combinations thereof. In some embodiments, the strain compensating component comprises germanium and the dopant is nitrogen.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method of producing silicon carbide comprising: placing a seed in a growth zone; introducing a source material, a nitrogen dopant and strain compensating component in the growth zone; and sublimating a silicon carbide crystal on the seed by heating the growth zone such that the silicon carbide crystal includes the nitrogen dopant at a nitrogen concentration of from 1×10 18 cm −3 to 1×10 21 cm −3 in the silicon carbide crystal and the strain compensating component is selected from a group comprising germanium, tin, arsenic, phosphorus, and combinations thereof; wherein the strain compensating component comprises an isoelectronic element and/or an element with the same majority carrier type as the nitrogen dopant, and the silicon carbide crystal is grown so that a concentration of the strain compensating component in the silicon carbide crystal is from 2×10 18 cm −3 to 2×10 20 cm −3 . 2. The method of claim 1 further comprising cutting the silicon carbide crystal into wafers. 3. The method of claim 1 wherein the strain compensating component comprises germanium. 4. The method of claim 1 wherein the concentration of nitrogen in the silicon carbide crystal is from 1×10 18 cm −3 to 1.8×10 20 cm −3 .
Assignees
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Classifications
Epitaxial-layer growth · CPC title
- C30B29/36Primary
Carbides · CPC title
After-treatment of single crystals or homogeneous polycrystalline material with defined structure (C30B31/00 takes precedence) · CPC title
Heating of the substrate · CPC title
characterised by the substrate · CPC title
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- What does patent US10577720B2 cover?
- Stabilized, high-doped silicon carbide is described. A silicon carbide crystal is grown on a substrate using chemical vapor deposition so that the silicon carbide crystal includes a dopant and the strain compensating component. The strain compensating component can be an isoelectronic element and/or an element with the same majority carrier type as the dopant. The silicon carbide crystal can th…
- Who is the assignee on this patent?
- Cree Inc
- What technology area does this patent fall under?
- Primary CPC classification C30B29/36. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Mar 03 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).