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Method for controlled growth of silicon carbide and structures produced by same
US9048166B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9048166-B2 |
| Application number | US-201313769977-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 19, 2013 |
| Priority date | Apr 28, 2010 |
| Publication date | Jun 2, 2015 |
| Grant date | Jun 2, 2015 |
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Abstract
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A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is then replaced with the final substrate, and SiC is grown on the final substrate. A single crystal of silicon carbide is produced, wherein the crystal of silicon carbide has substantially few micropipe defects. Such a crystal may also include a substantially uniform concentration of the low-solubility impurity, and may be used to make wafers and/or SiC die.
First claim
Opening claim text (preview).
The invention claimed is: 1. A silicon carbide crystal having a substantially uniform concentration of a low-solubility impurity, a substantially uniform ration from about 1 to about 3 of the low-solubility impurity to second impurity, a dimension of at least 50 mm, and a plurality of geometric volumes, each a volume of 100 mm 3 with less than or equal to 5 micropipes the silicon carbide crystal formed by a process comprising: placing a sacrificial substrate in a chamber with a s…
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Chemistry & Metallurgy · mapped topic
Chemistry & Metallurgy · mapped topic
- C30B23/002Primary
Chemistry & Metallurgy · mapped topic
- H10D62/8325Primary
Electricity · mapped topic
- H01L29/1608Primary
Electricity · mapped topic
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- What does patent US9048166B2 cover?
- A method for controlled growth of silicon carbide and structures produced by the method are disclosed. A crystal of silicon carbide (SiC) can be grown by placing a sacrificial substrate in a growth zone with a source material. The source material may include a low-solubility impurity. SiC is then grown on the sacrificial substrate to condition the source material. The sacrificial substrate is t…
- Who is the assignee on this patent?
- Cree Inc
- What technology area does this patent fall under?
- Primary CPC classification C30B23/002. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Jun 02 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).