Selective deposition of aluminum and nitrogen containing material

Patent metadata

Field	Value
Publication number	US-10553482-B2
Application number	US-201816158780-A
Country	US
Kind code	B2
Filing date	Oct 12, 2018
Priority date	Aug 5, 2015
Publication date	Feb 4, 2020
Grant date	Feb 4, 2020

Abstract

Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

First claim

What is claimed is:

1. A process for selectively forming AlN on a first surface of a substrate relative to a second different surface of the substrate, the process comprising one or more super-cycles comprising:
selectively depositing AlN on the first surface of the substrate relative to the second different surface of the substrate by one or more selective deposition sub-cycles;
etching the deposited AlN by one or more thermal etching sub-cycles;
wherein AlN is selectively formed on the first surface of the substrate relative to the second different surface of the substrate with a selectivity greater than about 99% in an entirety of the process for selectively forming AlN.

2. The process of claim 1 , wherein the one or more super-cycles are repeated until an AlN thin film of a desired thickness is formed on the first surface of the substrate.

3. The process of claim 1 , the one or more super-cycles additionally comprising exposing the substrate to a pretreatment reactant.

4. The process of claim 3 , wherein the substrate is exposed to a pretreatment reactant prior to the one or more selective deposition sub-cycles.

5. The process of claim 3 , wherein the pretreatment reactant comprises plasma.

6. The process of claim 5 , wherein the plasma is generated from a gas comprising H 2 .

7. The process of claim 1 , wherein the one or more selective deposition sub-cycles comprise:
contacting the substrate with a first vapor phase precursor comprising aluminum; and
contacting the substrate with a second vapor phase precursor comprising nitrogen.

8. The process of claim 7 , wherein AlN is deposited on the first surface of the substrate relative to the second surface of the substrate with a selectivity of greater than 5% in the one or more selective deposition sub-cycles.

9. The process of claim 7 , wherein the one or more selective deposition sub-cycles are repeated until the one or more selective deposition sub-cycles are no longer selective.

10. The process of claim 7 , wherein the first vapor phase precursor comprising aluminum comprises tritertbutylaluminum (TTBA), trimethylaluminum (TMA) or triethylaluminum (TEA).

11. The process of claim 7 , wherein the second vapor phase precursor comprising nitrogen comprises NH 3 .

12. The process of claim 1 , wherein the one or more thermal etching sub-cycles comprise:
contacting the substrate with a first vapor phase halide etch reactant; and
contacting the substrate with a second vapor phase etch reactant comprising aluminum.

13. The process of claim 12 , wherein the first vapor phase halide etch reactant comprises NF 3 or NbF 5 .

14. The process of claim 12 , wherein the second vapor phase etch reactant comprising aluminum comprises trimethylaluminum (TMA) or triethylaluminum (TEA).

15. The process of claim 12 , wherein the one or more thermal etching sub-cycles are carried out at a process temperature of about 300° C.

16. The process of claim 1 , wherein the first surface is a conductive surface and the second different surface is a dielectric surface.

17. The process of claim 1 , wherein the first surface comprises W and the second surface comprises SiO 2 .

18. The process of claim 1 , wherein the first surface comprises TiN and the second surface comprises SiO 2 .

19. The process of claim 1 , wherein the one or more selective deposition sub-cycles are repeated from 1 to about 300 times and the one or more thermal etching sub-cycles are repeated from 1 to about 150 times.

20. The process of claim 1 , wherein the one or more selective deposition sub-cycles comprise contacting the substrate with a first vapor phase precursor comprising trimethylaluminum (TMA) and contacting the substrate with a second vapor phase precursor comprising NH 3 , and the one or more thermal etching sub-cycles comprise contacting the substrate with a first vapor phase halide etch reactant comprising NF 3 , and a second vapor phase etch reactant comprising TMA.

Assignees

• Asm Ip Holding Bv

Inventors

• Wang Han
• Xie Qi
• Longrie Delphine
• Maes Jan Willem
• De Roest David
• Hsieh Julian
• Zhu chiyu
• Asikainen Timo
• Kachel Krzysztof
• Profijt Harald

Classifications

• H10P50/285

  of materials not containing Si, e.g. PZT or Al2O3 · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P14/69391 Primary

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6514

  by exposure to a plasma · CPC title