Deposition system for growth of inclined c-axis piezoelectric material structures

Patent metadata

Field	Value
Publication number	US-2017110300-A1
Application number	US-201615293063-A
Country	US
Kind code	A1
Filing date	Oct 13, 2016
Priority date	Oct 14, 2015
Publication date	Apr 20, 2017
Grant date	—

Abstract

Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

First claim

What is claimed is:

1 . A deposition system comprising:
a linear sputtering apparatus comprising a target surface configured to eject metal atoms; a substrate table comprising a support surface that is configured to receive at least one wafer and is coupled to a translation element, wherein the translation element is configured to translate the substrate table and the at least one wafer during operation of the linear sputtering apparatus; and a collimator comprising a plurality of guide members defining a plurality of collimator apertures arranged between the linear sputtering apparatus and the substrate table; wherein the target surface is arranged non-parallel to the support surface; and wherein at least one of the substrate table or the collimator is electrically biased to a potential other than ground.

2 . The deposition system of claim 1 , wherein the plurality of guide members is arranged non-perpendicular to the support surface.

3 . The deposition system of claim 1 , wherein the substrate table is electrically biased to a potential other than ground.

4 . The deposition system of claim 1 , wherein the collimator is electrically biased to a potential other than ground.

5 . The deposition system of claim 1 , wherein the linear sputtering apparatus comprises a linear magnetron that includes a sputtering cathode operatively coupled to the target surface to promote ejection of metal atoms from the target surface.

6 . The deposition system of claim 1 , wherein the linear sputtering apparatus comprises a linear ion beam sputtering apparatus.

7 . The deposition system of claim 1 , wherein the plurality of guide members comprises a plurality of longitudinal members and a plurality of transverse members that form a grid.

8 . The deposition system of claim 1 , wherein the plurality of guide members comprises a plurality of longitudinal members biased to a first electrical potential other than ground and comprises a plurality of transverse members biased to a second electrical potential other than ground, and wherein the second electrical potential differs from the first electrical potential.

9 . The deposition system of claim 1 , wherein the collimator is configured to translate during operation of the linear sputtering apparatus.

10 . The deposition system of claim 1 , further comprising a deposition aperture arranged between the collimator and the substrate table.

11 . The deposition system of claim 10 , further comprising a uniformity shield configured to adjust dimensions of the deposition aperture.

12 . The deposition system of claim 1 , wherein the support surface is configured to receive at least two wafers.

13 . The deposition system of claim 1 , wherein the target surface comprises aluminum or zinc and is configured to eject aluminum atoms or zinc atoms.

14 . The deposition system of claim 1 , being configured to receive a supply of sputtering gas, wherein the sputtering gas comprises a gas species adapted to react with the metal atoms.

15 . The deposition system of claim 1 , operatively coupled to a source of sputtering gas comprising nitrogen or oxygen.

16 . The deposition system of claim 1 , including at least one wafer received by the support surface, wherein the at least one wafer comprises a substrate, an acoustic reflector structure arranged over the substrate, and an electrode structure arranged over at least a portion of the acoustic reflector structure.

17 . The deposition system of claim 1 , including at least one wafer received by the support surface, wherein the at least one wafer comprises a substrate defining a recess, a support layer is arranged over the recess, and an electrode structure is arranged over the support layer.

18 . The deposition system of claim 1 , wherein the target surface is oriented 15 to 55 degrees apart from the substrate table.

19 . The deposition system of claim 1 , being configured for growth of a hexagonal crystal structure piezoelectric material bulk layer over a seed layer that overlies a wafer received by the support surface, wherein at least 50% of the hexagonal crystal structure piezoelectric material bulk layer comprises a c-axis having an orientation distribution predominantly in a range of from 25 degrees to 50 degrees relative to normal of a face of the wafer.

20 . The deposition system of claim 1 , being configured for growth of a hexagonal crystal structure piezoelectric material bulk layer over a seed layer that overlies a wafer received by the support surface, wherein at least 90% of the hexagonal crystal structure piezoelectric material bulk layer comprises a c-axis having an orientation distribution predominantly in a range of from 25 degrees to 50 degrees relative to normal of a face of the wafer.

Assignees

• Qorvo Us Inc

Inventors

• Mccarron Kevin
• Belsick John

Classifications

• H01J37/3417

  Arrangements · CPC title

• H03H9/175

  Acoustic mirrors · CPC title

• H03H9/02015

  Characteristics of piezoelectric layers, e.g. cutting angles · CPC title

• C23C14/35

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title

• C30B25/186

  being specially pre-treated by, e.g. chemical or physical means · CPC title