Dual stack varactor

Patent metadata

Field	Value
Publication number	US-10535784-B2
Application number	US-201815901061-A
Country	US
Kind code	B2
Filing date	Feb 21, 2018
Priority date	May 8, 2014
Publication date	Jan 14, 2020
Grant date	Jan 14, 2020

Abstract

Embodiments include apparatuses and methods related to vertically stacked varactors. Specifically two varactors may be constructed of vertically stacked layers including an anode layer, a contact layer, and a varactor layer. The two varactors may share one or more layers in common. In some embodiments the two varactors may share the anode layer in common, while in other embodiments the two varactors may share the contact layer in common.

First claim

What is claimed is:

1. A package comprising:
a first varactor comprising a first contact layer, an anode layer, and a first varactor layer between the first contact layer and the anode layer; and
a second varactor over the first varactor and comprising a second contact layer, the anode layer, and a second varactor layer between the second contact layer and the anode layer, wherein:
the anode layer is between the first varactor layer and the second varactor layer; and
the anode layer comprises a first anode contact layer coupled with the first varactor layer, and a second anode contact layer coupled with the second varactor layer, and a first etch stop layer between and coupled with the first anode contact layer and the second anode contact layer, and wherein:
the first contact layer comprises a top layer directly coupled with the first varactor layer, a bottom layer, and a second etch stop layer coupled between the top layer and the bottom layer, wherein the top layer and the bottom layer of the first contact layer comprise doped gallium arsenide and the second etch stop layer comprises one of doped aluminum gallium arsenide or indium gallium phosphide.

2. The package of claim 1 , further comprising an ohmic contact coupled with the anode layer and configured to receive a negative direct current (DC) voltage.

3. The package of claim 1 , further comprising a first ohmic contact coupled with the first contact layer, and a second ohmic contact coupled with the second contact layer.

4. The package of claim 3 , wherein the first ohmic contact is a signal input, and the second ohmic contact is a signal output.

5. The package of claim 1 , wherein the first contact layer or the second contact layer is n+ doped, the first varactor layer or the second varactor layer is n− doped, and the anode layer is p+ doped.

6. The package of claim 1 , wherein the anode layer comprises at least one of gallium arsenide, germanium, aluminum phosphide, aluminum arsenide, indium phosphide, and gallium nitride.

7. A method comprising:
depositing a first contact layer of a first varactor;
depositing a first varactor layer of the first varactor on the first contact layer; depositing a common contact layer of the first varactor and a second varactor on the first varactor layer;
depositing a second varactor layer of the second varactor on the common contact layer; and
depositing a second contact layer of the second varactor on the second varactor layer, wherein:
the first varactor layer has a first doping profile such that a doping concentration of the first varactor layer varies over a is a function of depth of the first varactor layer;
the second varactor layer has a second doping profile such that a doping concentration of the second varactor layer varies over a is a function of depth of the second varactor layer;
the second doping profile is inverted with respect to the first doping profile; and
the common contact layer comprises a first common contact layer coupled with the first varactor layer, and a second common contact layer coupled with the second varactor layer, and a first etch stop layer between and coupled with the first common contact layer and the second common contact layer, and wherein:
the first contact layer comprises a top layer directly coupled with the first varactor layer, a bottom layer, and a second etch stop layer coupled between the top layer and the bottom layer, wherein the top layer and the bottom layer of the first contact layer comprises doped gallium arsenide and the second etch stop layer comprises one of doped aluminum gallium arsenide or indium gallium phosphide.

8. The method of claim 7 , wherein the common contact layer is a p+ doped anode contact layer and the first contact layer and the second contact layer are n+ doped contact layers.

9. The method of claim 7 , wherein the first doping profile and the second doping profile are both linear doping profiles.

10. The method of claim 7 , wherein the first doping profile and the second doping profile are both abrupt doping profiles.

11. The method of claim 7 , wherein the first doping profile and the second doping profile are both hyper-abrupt doping profiles.

12. A package comprising:
a first varactor comprising a first contact layer, a common contact layer, and a first varactor layer between the first contact layer and the common contact layer; and
a second varactor over the first varactor and comprising a second contact layer, the common contact layer, and a second varactor layer between the second contact layer and the common contact layer; wherein:
the common contact layer is between the first varactor layer and the second varactor layer;
the first varactor layer has a first doping profile such that a doping concentration of the first varactor layer varies over a is a function of depth of the first varactor layer;
the second varactor layer has a second doping profile such that a doping concentration of the second varactor layer varies over a is a function of depth of the second varactor layer;
the second doping profile is inverted with respect to the first doping profile; and
the common contact layer comprises a first common contact layer coupled with the first varactor layer, and a second common contact layer coupled with the second varactor layer, and a first etch stop layer between and coupled with the first common contact layer and the second common contact layer, and wherein:
the first contact layer comprises a top layer directly coupled with the first varactor layer, a bottom layer, and a second etch stop layer coupled between the top layer and the bottom layer, wherein the top layer and the bottom layer of the first contact layer comprises doped gallium arsenide and the second etch stop layer comprises one of doped aluminum gallium arsenide or indium gallium phosphide.

13. The package of claim 12 , wherein the common contact layer comprises at least one of gallium arsenide, germanium, aluminum phosphide, aluminum arsenide, indium phosphide, and gallium nitride.

14. The package of claim 12 , wherein the common contact layer is a p+ doped anode contact layer and the first contact layer and the second contact layer are n+ doped contact layers.

15. The package of claim 14 , further comprising an ohmic contact coupled with the common contact layer and configured to receive a negative direct current (DC) voltage.

16. The package of claim 12 , wherein the first doping profile and the second doping profile are both linear doping profiles.

17. The package of claim 12 , wherein the first doping profile and the second doping profile are both abrupt doping profiles.

18. The package of claim 12 , wherein the first doping profile and the second doping profile are both hyper-abrupt doping profiles.

Assignees

• Qorvo Us Inc

Inventors

• Wright Peter V
• Henderson Timothy S

Classifications

• H10W90/00

  Package configurations · CPC title

• H10W74/10

  characterised by their shape or disposition · CPC title

• H10W74/01

  Manufacture or treatment · CPC title

• H01L29/93 Primary

  Electricity · mapped topic

• H01L29/20

  Electricity · mapped topic