Semiconductor device

Patent metadata

Field	Value
Publication number	US-10529800-B2
Application number	US-201815897162-A
Country	US
Kind code	B2
Filing date	Feb 15, 2018
Priority date	Feb 16, 2017
Publication date	Jan 7, 2020
Grant date	Jan 7, 2020

Abstract

A semiconductor device is provided, including: a semiconductor substrate having an active area and an edge termination region; an upper electrode; an insulating film provided between the semiconductor substrate and the upper electrode and having a contact hole; a first conductivity-type drift region; a second conductivity-type base region; a second conductivity-type well region; and a second conductivity-type extension region formed extending in a direction toward the well region from the base region and separated from the upper electrode by the insulating film, wherein a sum of a first distance from an end portion of the contact hole closer to the well region to an end portion of the extension region closer to the well region and a second distance from the end portion of the extension region closer to the well region to the well region is smaller than a thickness of the semiconductor substrate in the active area.

First claim

What is claimed is:

1. A semiconductor device comprising a semiconductor substrate having formed therein an active area in which main current flows and an edge termination region to relax electric field, wherein
the semiconductor device comprises:
an upper electrode provided above the semiconductor substrate;
an insulating film which is provided between the semiconductor substrate and the upper electrode, and has formed therein a contact hole;
a first conductivity-type drift region formed inside the semiconductor substrate;
a second conductivity-type base region which is formed on an upper-surface side of the semiconductor substrate in the active area, and is connected to the upper electrode through the contact hole;
a second conductivity-type well region which is formed on an upper-surface side of the semiconductor substrate in the edge termination region, and is separated from the upper electrode; and
a second conductivity-type extension region which is formed extending in a direction toward the well region from the base region on an upper-surface side of the semiconductor substrate, and is separated from the upper electrode by the insulating film, and wherein

in a plane parallel to an upper surface of the semiconductor substrate, a sum of a first distance from an end portion of the contact hole closer to the well region to an end portion of the extension region closer to the well region and a second distance from the end portion of the extension region closer to the well region to the well region is smaller than a thickness of the semiconductor substrate in the active area, and
at a corner portion of the semiconductor substrate, a radius of curvature of an end portion of the contact hole in top view is greater than a radius of curvature of an end portion of the extension region in top view.

2. The semiconductor device according to claim 1 , the sum of the first distance and the second distance is greater than 50 μm.

3. The semiconductor device according to claim 1 , wherein the sum of the first distance and the second distance is smaller than 100 μm.

4. The semiconductor device according to claim 1 , wherein a doping concentration N A of the extension region satisfies the following formula:

0.1
<

N
A

(

J
rate

×
30

q
·

v

sat
⁢

⁢
_
⁢

⁢
P

)

<
10

wherein Jrate is a rated current density (A/cm 2 ), q is an elementary charge (C), and v sat_P is a saturation velocity of holes (cm/sec).

5. The semiconductor device according to claim 1 , wherein a doping concentration of the extension region is 5.0×10 16 /cm 3 or more and 3.0×10 17 /cm 3 or less.

6. The semiconductor device according to claim 1 , wherein a depth of the extension region is same as a depth of the well region.

7. The semiconductor device according to claim 1 , wherein a doping concentration of the extension region is same as a doping concentration of the well region.

8. The semiconductor device according to claim 1 ,
further comprising a first conductivity-type cathode region which is provided between the drift region and a lower surface of the semiconductor substrate inside the semiconductor substrate, and has a higher doping concentration than the drift region, wherein
an end portion of the cathode region closer to the edge termination region is arranged closer to the active area than the well region.

9. The semiconductor device according to claim 8 , wherein the end portion of the cathode region closer to the edge termination region is arranged closer to the active area than the end portion of the extension region closer to the well region.

10. The semiconductor device according to claim 8 , wherein the end portion of the cathode region closer to the edge termination region is arranged farther from the well region than the end portion of the contact hole closer to the well region.

Assignees

• Fuji Electric Co Ltd

Inventors

• Mitsuzuka Kaname
• Onozawa Yuichi
• Tamura Takahiro

Classifications

• H01L29/1095

  Electricity · mapped topic

• H01L29/0619

  Electricity · mapped topic

• H01L29/0696

  Electricity · mapped topic

• H01L29/7397

  Electricity · mapped topic

• H01L29/0638 Primary

  Electricity · mapped topic