Power diode with improved reverse-recovery immunity

Patent metadata

Field	Value
Publication number	US-10056501-B2
Application number	US-201615391170-A
Country	US
Kind code	B2
Filing date	Dec 27, 2016
Priority date	Jan 14, 2015
Publication date	Aug 21, 2018
Grant date	Aug 21, 2018

Abstract

Provided is a device with improved reverse-recovery immunity of a diode element. The device includes: a first conductivity-type drift layer; a second conductivity-type anode region provided in an upper portion of the drift layer; a second conductivity-type extraction region in contact with and surrounding the anode region; and a second conductivity-type field limiting ring region surrounding and separated from the extraction region at the upper portion of the drift layer, wherein the extraction region has a greater depth than the anode region and the field limiting ring region.

First claim

What is claimed is:

1. A semiconductor device comprising:
a drift layer of a first conductivity type;
an anode region of a second conductivity type, provided in an upper portion of the drift layer;
an extraction region of the second conductivity type, in contact with and surrounding the anode region;
a field limiting ring region of the second conductivity type, surrounding and separated from the extraction region in the upper portion of the drift layer;
an insulating film provided on the drift layer; and
an anode electrode including an ohmic contact portion in ohmic contact with the anode region through a contact hole penetrating the insulating film, and an extension portion stretched out from the ohmic contact portion onto the insulating film,
wherein the extraction region has a greater depth than the anode region and the field limiting ring region,
an outer curved portion of the extraction region is located outside of an outer edge of the extension portion such that the outer curved portion of the extraction region is closer to a peripheral edge of the drift layer than the outer edge of the extension portion is to the peripheral edge of the drift layer,
an edge of the insulating film between the extraction region and the anode electrode is implemented by a square flat pattern having first arc-like corners,
the extraction region is implemented by a frame-like flat pattern having second arc-like corners, the second arc-like corners corresponding to the first arc-like corners, and
with a distance A from the outer curved portion of the extraction region and the edge of the insulating film, and a distance B between the edge of the insulating film and an inner curved portion of the extraction region,
a relation represented by B>A is satisfied, and
a difference between the distance B and the distance A at respective corners, among the first arc-like corners and the second arc-like corners, is greater than a difference between the distance B and the distance A at straight regions of the edge of the insulating film.

2. The semiconductor device of claim 1 , further comprising a cathode region provided at a lower portion of the drift layer.

3. The semiconductor device of claim 1 ,
wherein the extraction region is arranged immediately below the extension portion of the anode electrode.

4. The semiconductor device of claim 3 , wherein the extraction region spans from the ohmic contact portion to the extension portion, and is connected to the ohmic contact portion.

5. The semiconductor device of claim 4 , wherein a depth of the extraction region is in a range of from 10 μm to 30 μm.

6. The semiconductor device of claim 4 , wherein:
an outer edge, which is located on an outside relative to a center point within the semiconductor device, at corners, among the second arc-like corners of the extraction region, is implemented by an arc having a radius of curvature of which a center is located on an inner side as compared with a center of a radius of curvature at corners, among the first arc-like corners of the edge of the insulating film.

7. The semiconductor device of claim 6 , wherein the radius of curvature of the outer edge at the corners of the extraction region is greater than the radius of curvature at the corners of the edge of the insulating film.

8. The semiconductor device of claim 6 , wherein an inner edge at the corners of the extraction region is implemented by an arc having a radius of curvature of which a center is located on an inner side as compared with the center of the radius of curvature at the corners of the edge of the insulating film.

9. The semiconductor device of claim 8 , wherein the radius of curvature of the inner edge at the corners of the extraction region is greater than the radius of curvature at the corners of the edge of the insulating film.

10. The semiconductor device of claim 1 , wherein a relation represented by B≥A×3 is satisfied.

11. The semiconductor device of claim 1 , wherein an irradiation region irradiated with helium ions is provided at a boundary between the extraction region and the drift layer such that the irradiation region is located within an 80% to 120% depth of the extraction region.

12. The semiconductor device of claim 11 , wherein the irradiation region is located within a 90% to 110% length of the extraction region.

13. The semiconductor device of claim 11 , wherein a dose of the helium ions irradiated is 5×10 11 /cm 2 or less.

14. A semiconductor device comprising:
a drift layer of a first conductivity type;
an anode region of a second conductivity type, provided in an upper portion of the drift layer;
an extraction region of a second conductivity type, in contact with and surrounding the anode region at the upper portion of the drift layer;
an insulating film provided on the drift layer; and
an anode electrode including an ohmic contact portion in ohmic contact with the anode region through a contact hole penetrating the insulating film, and an extension portion stretched out from the ohmic contact portion onto the insulating film,
wherein the extraction region has a greater depth than the anode region, and extends across the ohmic contact portion of the anode electrode and the extension portion,
an edge of the insulating film between the extraction region and the anode electrode is implemented by a square flat pattern having first arc-like corners,
the extraction region is implemented by a frame-like flat pattern having second arc-like corners, the second arc-like corners corresponding to the first arc-like corners,
with a distance A from an outer curved portion of the extraction region and the edge of the insulating film, and a distance B between the edge of the insulating film and an inner curved portion of the extraction region,
a relation represented by B>A is satisfied, and
a difference between the distance B and the distance A at respective corners, among the first arc-like corners and the second arc-like corners, is greater than a difference between the distance B and the distance A at straight regions of the edge of the insulating film, and

the outer curved portion of the extraction region is located outside of an outer edge of the extension portion such that the outer curved portion of the extraction region is closer to a peripheral edge of the drift layer than the outer edge of the extension portion is to the peripheral edge of the drift layer.

15. The semiconductor device of claim 14 , wherein a relation represented by B≥A×3 is satisfied.

16. The semiconductor device of claim 14 , wherein an irradiation region irradiated with helium ions is provided at a boundary between the extraction region and the drift layer such that the irradiation region is located within an 80% to 120% depth of the extraction region.

Assignees

• Fuji Electric Co Ltd

Inventors

• Kakefu Mitsuhiro

Classifications

• H10P30/204 Primary

  into Group IV semiconductors · CPC title

• H10P30/21

  of electrically active species · CPC title

• H10D8/00 Primary

  Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) · CPC title

• H01L29/0619

  Electricity · mapped topic

• H01L29/0615

  Electricity · mapped topic