Method of plasma etching of silicon-containing organic film using sulfur-based chemistry

Patent metadata

Field	Value
Publication number	US-10529589-B2
Application number	US-201815995173-A
Country	US
Kind code	B2
Filing date	Jun 1, 2018
Priority date	Jun 8, 2017
Publication date	Jan 7, 2020
Grant date	Jan 7, 2020

Abstract

A method of etching is described. The method providing a substrate having a first material composed of silicon-containing organic material and a second material that is different from the first material, forming a chemical mixture by plasma-excitation of a process gas containing SF6 and an optional inert gas, controlling a processing pressure at or above 100 mtorr, and exposing the first material on the substrate to the chemical mixture to selectively etch the first material relative to the second material.

First claim

The invention claimed is:

1. A method of etching, comprising:
providing a substrate having a patterned mask, a first material composed of silicon-containing organic material exposed through a pattern of the patterned mask, a second material that is different from the first material, and plural layers positioned between the first material and the second material;
forming a chemical mixture by plasma-excitation of a process gas containing SF 6 and an optional inert gas;
controlling a processing pressure at or above 100 mtorr; and
exposing the first material on the substrate to the chemical mixture to selectively etch the first material, and thereby extending the pattern of the patterned mask into the first material to form a patterned first material and exposing one of the plural layers through the patterned first material;
etching the plural layers through a pattern formed in the patterned first material to expose the second material through the plural layers;
removing remaining portions of the patterned first material after etching of the plural layers, wherein during at least part of the removing of the remaining portions of the patterned first material the second material is exposed through the plural layer, and wherein the removing of the remaining portions of the first material includes using a removal gas mixture which includes SF 6 .

2. The method of claim 1 , wherein the silicon-containing organic material has a silicon content less than or equal to 20% by weight and greater than 0% by weight.

3. The method of claim 1 , wherein the silicon-containing organic material has a silicon content greater than or equal to 40% by weight and less than 100% by weight.

4. The method of claim 1 , wherein the silicon-containing organic material is a silicon-containing anti-reflective coating (SiARC).

5. The method of claim 1 , wherein the second material includes Si and O.

6. The method of claim 5 , wherein the second material includes SiO 2 .

7. The method of claim 5 , wherein during removing remaining portions of the patterned first material while the second material is exposed, the amount of second material removed is less than or equal to 5 nm.

8. The method of claim 5 , wherein during removing remaining portions of the patterned first material while the second material is exposed, the amount of second material removed is less than or equal to 3 nm.

9. The method of claim 1 , wherein the plural layers include silicon, carbon, or silicon and at least one element selected from the group consisting of O, N, C, and Ge.

10. The method of claim 1 , wherein the process gas contains a noble element.

11. The method of claim 1 , wherein the first process gas further contains N 2 , O 2 , a compound having both S and O, or C x H y F z , where x, y, and z are integers greater than or equal to zero, or a combination thereof.

12. The method of claim 1 , wherein the processing pressure is at or above 200 mtorr.

13. The method of claim 1 , wherein the plasma excitation of the process gas includes generating plasma using a capacitively coupled plasma source containing an upper plate electrode, and a lower plate electrode supporting the substrate.

14. The method of claim 1 , wherein the plasma excitation of the process gas includes generating plasma using an inductively coupled plasma source containing an inductive element, and a lower plate electrode supporting the substrate.

15. A method of etching, comprising:
providing a substrate having a first material composed of silicon-containing organic material and a second material that is different from the material;
forming a chemical mixture by plasma-excitation of a process gas containing SF 6 and an optional inert gas;
controlling a processing pressure in the processing space; and
exposing the first material on the substrate to the chemical mixture to selectively etch the first material relative to the second material;
wherein a lithographic pattern extends through the first material, and exposes the second material;
wherein the substrate includes one or more layers positioned between the first material and the second material; and
wherein the lithographic pattern is extended through the one or more layers between the first material and the second material using an oxygen-free etching process.

16. The method of claim 15 , wherein the oxygen-free etching process contains HBr.

17. The method of claim 15 , wherein the first material is substantially removed during the exposing after the lithographic pattern is extended through the one or more layers between the first material and the second material.

18. A method of etching comprising:
providing a substrate having a patterned mask, a first material exposed through the patterned mask, a second material below the first material, and at least one intermediate layer between the first material and the second material, wherein the first material includes a silicon-containing organic material, and the second material includes Si and O;
etching the first material through the patterned mask to form a patterned first material through which the intermediate layer is exposed;
etching the at least one intermediate layer through the patterned first material to expose the second material through the at lest one intermediate layer; and
after exposing the second material, removing remaining portions of the patterned first material with a removal gas which includes SF 6 such that the patterned first material is selectively removed with respect to the second material.

19. The method of claim 18 , wherein during removing of the remaining portions of the patterned first material while the second material is exposed an amount of the second material removed is less than or equal to 5 nm.

20. The method of claim 18 , wherein the first material is a silicon-containing anti-reflective coating, and the second material includes SiO 2 .

21. The method of claim 18 , wherein:
the etching the at least one intermediate layer includes an oxygen-free etching process; and
during removing of the remaining portions of the patterned first material a process pressure is controlled to at or above 100 mtorr.

Assignees

• Tokyo Electron Ltd

Inventors

• Karakas Erdinc
• Wang Li
• Nolan Andrew
• Talone Christopher
• Sridhar Shyam
• Ranjan Alok
• Ohtake Hiroto

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/2043 Primary

  using an anti-reflective coating · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title