Substrate processing method and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-10527348-B2
Application number	US-201715697670-A
Country	US
Kind code	B2
Filing date	Sep 7, 2017
Priority date	Sep 26, 2016
Publication date	Jan 7, 2020
Grant date	Jan 7, 2020

Abstract

A substrate processing method includes a substrate holding step of horizontally holding a substrate, a substrate rotating step of rotating the substrate held horizontally around a rotational axis along a vertical direction, a liquid-film forming step of forming a liquid film of a first organic solvent that is used to process an upper surface of the substrate on the upper surface of the substrate by supplying the first organic solvent to the upper surface of the substrate held horizontally, a vapor supplying step of supplying a vapor of a second organic solvent to a space between a facing surface of a heater unit that has the facing surface facing a lower surface of the substrate held horizontally and the lower surface of the substrate, a substrate heating step of heating the substrate being in a rotational state by means of the vapor of the second organic solvent in parallel with the substrate rotating step and the liquid-film forming step, and a substrate drying step of, after the substrate heating step, excluding the liquid film of the first organic solvent from the substrate held horizontally and drying the upper surface of the substrate in a state in which the rotation of the substrate is stopped and the substrate is in contact with the heater unit.

First claim

What is claimed is:

1. A substrate processing method comprising:
a substrate holding step of horizontally holding a substrate;
a substrate rotating step of rotating the substrate held horizontally around a rotational axis along a vertical direction;
a liquid-film forming step of forming a liquid film of a water repellent agent, which is used to process an upper surface of the substrate, by supplying the water repellent agent to the upper surface of the substrate held horizontally and rotated around the rotational axis;
a vapor supplying step of supplying a vapor of a first organic solvent to a space between a facing surface of a heater unit that has the facing surface facing a lower surface of the substrate held horizontally and the lower surface of the substrate;
a substrate heating step of heating the substrate that is in a rotational state by means of the vapor of the first organic solvent supplied to the space, in parallel with the substrate rotating step and the liquid-film forming step; and
a substrate drying step of, after the substrate heating step, excluding the liquid film of the water repellent agent from the substrate held horizontally by replacing the liquid film of the water repellent agent on the upper surface of the substrate held horizontally with a liquid film of a second organic solvent, and drying the substrate by excluding the liquid film of the second organic solvent from the upper surface of the substrate in a state in which the rotation of the substrate is stopped and the substrate is in contact with the heater unit, wherein
the water repellent agent is a silicon-based water repellent agent that hydrophobizes silicon itself or a compound including silicon, or a metal-based water repellent agent that hydrophobizes metal itself or a compound including metal,
the silicon-based water repellent is a silane coupling agent including at least one selected from the group consisting of HMDS (hexamethyldisilazane), TMS (tetramethylsilane), fluoridated alkylchlorosilane, alkyldisilazane, and a non-chloro-based water repellent agent,
the non-chloro-based water repellent agent including at least one selected from the group consisting of dimethylsilyldimethylamine, dimethylsilyldiethylamine, tetramethyldisilazane, bis(dimethylamino)dimethylsilane, N,N-dimethylaminotrimethylsilane, N-(trimethylsilyl)dimethylamine, and an organosilane compound,
the metal-based water repellent agent includes at least one amine that has a hydrophobic group and an organic silicon compound,
the first organic solvent includes a volatile organic solvent that is higher in volatility than water, the first organic solvent being a liquid including at least one selected from the group consisting of IPA (isopropyl alcohol), HFE (hydrofluoroether), methanol, ethanol, acetone, trans-1,2-dichloroethylene, and the water repellent agent, and
the second organic solvent is a low-surface-tension liquid whose surface tension is lower than water, and is a liquid that includes at least one selected from the group consisting of IPA (isopropyl alcohol), HFE (hydrofluoroether), methanol, ethanol, acetone, and trans-1,2-dichloroethylene.

2. The substrate processing method according to claim 1 , wherein the substrate heating step includes a step of heating the vapor of the first organic solvent that is supplied to the space, by means of the heater unit.

3. The substrate processing method according to claim 1 , wherein the vapor supplying step includes a first organic solvent supplying step of supplying the first organic solvent that is liquid formed or misty to the space, and a first organic solvent vaporizing step of vaporizing the first organic solvent that is liquid formed or misty by heating the first organic solvent that is liquid formed or misty by means of the heater unit.

4. The substrate processing method according to claim 1 , wherein the excluding step of the liquid film of the second organic solvent in the drying step includes:
an opening forming step of forming an opening in the liquid film of the second organic solvent by supplying an inert gas to a central area of the liquid film of the second organic solvent; and
an opening enlarging step of excluding the liquid film of the second organic solvent from the upper surface of the substrate by enlarging the opening.

5. The substrate processing method according to claim 1 , wherein the substrate drying step includes a heater-unit moving step of allowing the heater unit to approach the lower surface of the substrate in order to bring the facing surface into contact with the lower surface of the substrate being in a state in which the rotation has been stopped.

6. The substrate processing method according to claim 1 , wherein a composition of the first organic solvent is identical with a composition of the second organic solvent.

7. The substrate processing method according to claim 3 , wherein the first organic solvent supplying step includes a step of supplying the first organic solvent that is liquid formed or misty toward the facing surface of the heater unit.

Assignees

• Screen Holdings Co Ltd

Inventors

• Yoshihara Naohiko
• Okutani Manabu
• Ota Takashi
• Abe Hiroshi

Classifications

• F26B11/08

  rotating about a vertical or steeply-inclined axis · CPC title

• F26B3/20 Primary

  the heat source being a heated surface {, e.g. a moving belt or conveyor}(F26B3/22 takes precedence) · CPC title

• F26B3/04

  the gas or vapour circulating over or surrounding the materials or objects to be dried (F26B3/14 takes precedence) · CPC title

• F26B9/10

  in the open air; in pans or tables in rooms; Drying stacks of loose material {on floors which may be covered, e.g. by a roof (ventilating means of stacks for agricultural produce A01F25/08)} · CPC title

• F26B5/08

  by centrifugal treatment · CPC title