Breaking-in and cleaning method and apparatus for wafer-cleaning brush
US-2024066566-A1 · Feb 29, 2024 · US
US2016089696A1 · US · A1
| Field | Value |
|---|---|
| Publication number | US-2016089696-A1 |
| Application number | US-201514849845-A |
| Country | US |
| Kind code | A1 |
| Filing date | Sep 10, 2015 |
| Priority date | Sep 30, 2014 |
| Publication date | Mar 31, 2016 |
| Grant date | — |
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Official abstract text for this publication.
A substrate processing method includes the steps of cleaning a substrate in a processing tank, forming an organic solvent vapor atmosphere in a chamber, elevating the substrate to replace a rinse on a surface of the substrate with an organic solvent, draining the rinse from the processing tank, moving the substrate into the processing tank, making the surface of the substrate water-repellent, elevating the substrate and supplying an organic solvent vapor to the substrate to remove water repellent from the surface of the substrate, and drying the substrate with inert gas. The water repellent is removed above the processing tank, and thus the substrate can be dried while contamination of the substrate with particles that can be generated in the processing tank in this step is suppressed.
Opening claim text (preview).
What is claimed is: 1 . A substrate processing method comprising the steps of: dipping a substrate into a rinse stored in a processing tank to clean a surface of said substrate with the rinse; supplying an organic solvent vapor into a chamber surrounding said processing tank to form an organic solvent vapor atmosphere inside the chamber including space above said processing tank; elevating said substrate to the space above said processing tank to replace the rinse adhering to the surface of said substrate with an organic solvent; draining the rinse stored in the processing tank; moving said substrate into said processing tank; supplying water repellent to the surface of said substrate having been moved into said processing tank to make the surface of said substrate water-repellent; elevating said substrate above said processing tank, and supplying an organic solvent vapor to said substrate above said processing tank to remove unreacted water repellent remaining on the surface of said substrate; and supplying inert gas to said substrate to dry said substrate. 2 . The substrate processing method according to claim 1 , wherein said organic solvent is IPA. 3 . The substrate processing method according to claim 1 , wherein the organic solvent vapor supplied to said substrate in removing the unreacted water repellent is at a higher temperature than the water repellent supplied to said substrate in making the surface of said substrate water-repellent.
with the semiconductor substrates being dipped in baths or vessels · CPC title
for cleaning followed by drying, rinsing, stripping, blasting or the like · CPC title
by wet cleaning only (H10P70/52 takes precedence) · CPC title
to obtain an anti-friction or anti-adhesive surface (rendering particulate materials free-flowing in general, e.g. making them hydrophobic B01J2/30) · CPC title
Post-treatment of applied coatings · CPC title
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