Substrate processing method and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-2018087836-A1
Application number	US-201715697670-A
Country	US
Kind code	A1
Filing date	Sep 7, 2017
Priority date	Sep 26, 2016
Publication date	Mar 29, 2018
Grant date	—

Abstract

A substrate processing method includes a substrate holding step of horizontally holding a substrate, a substrate rotating step of rotating the substrate held horizontally around a rotational axis along a vertical direction, a liquid-film forming step of forming a liquid film of a first organic solvent that is used to process an upper surface of the substrate on the upper surface of the substrate by supplying the first organic solvent to the upper surface of the substrate held horizontally, a vapor supplying step of supplying a vapor of a second organic solvent to a space between a facing surface of a heater unit that has the facing surface facing a lower surface of the substrate held horizontally and the lower surface of the substrate, a substrate heating step of heating the substrate being in a rotational state by means of the vapor of the second organic solvent in parallel with the substrate rotating step and the liquid-film forming step, and a substrate drying step of, after the substrate heating step, excluding the liquid film of the first organic solvent from the substrate held horizontally and drying the upper surface of the substrate in a state in which the rotation of the substrate is stopped and the substrate is in contact with the heater unit.

First claim

What is claimed is:

1 . A substrate processing method comprising:
a substrate holding step of horizontally holding a substrate; a substrate rotating step of rotating the substrate held horizontally around a rotational axis along a vertical direction; a liquid-film forming step of forming a liquid film of a first organic solvent that is used to process an upper surface of the substrate on the upper surface of the substrate by supplying the first organic solvent to the upper surface of the substrate held horizontally; a vapor supplying step of supplying a vapor of a second organic solvent to a space between a facing surface of a heater unit that has the facing surface facing a lower surface of the substrate held horizontally and the lower surface of the substrate; a substrate heating step of heating the substrate that is in a rotational state by means of the vapor of the second organic solvent in parallel with the substrate rotating step and the liquid-film forming step; and a substrate drying step of, after the substrate heating step, excluding the liquid film of the first organic solvent from the substrate held horizontally, and drying the upper surface of the substrate in a state in which the rotation of the substrate is stopped and the substrate is in contact with the heater unit.

2 . The substrate processing method according to claim 1 , wherein the substrate heating step includes a step of heating the vapor of the second organic solvent that is supplied to the space, by means of the heater unit.

3 . The substrate processing method according to claim 1 , wherein the first organic solvent includes a water repellent agent that raises water repellency of the upper surface of the substrate.

4 . The substrate processing method according to claim 1 , wherein the second organic solvent includes a volatile organic solvent that is higher in volatility than water.

5 . The substrate processing method according to claim 1 , wherein the vapor supplying step includes a second organic solvent supplying step of supplying the second organic solvent that is liquid formed or misty to the space, and a second organic solvent vaporizing step of vaporizing the second organic solvent that is liquid formed or misty by heating the second organic solvent that is liquid formed or misty by means of the heater unit.

6 . The substrate processing method according to claim 5 , wherein the second organic solvent supplying step includes a step of supplying the second organic solvent that is liquid formed or misty toward the facing surface of the heater unit.

7 . The substrate processing method according to claim 1 , wherein the substrate drying step includes a second liquid-film forming step of excluding the liquid film of the first organic solvent from the upper surface of the substrate by supplying a low-surface-tension liquid whose surface tension is lower than water to the upper surface of the substrate and of forming a liquid film of the low-surface-tension liquid on the upper surface of the substrate, and an excluding step of excluding the liquid film of the low-surface-tension liquid from the upper surface of the substrate.

8 . The substrate processing method according to claim 7 , wherein the excluding step includes:
an opening forming step of forming an opening in the liquid film of the low-surface-tension liquid by supplying an inert gas to a central area of the liquid film of the low-surface-tension liquid; and an opening enlarging step of excluding the liquid film of the low-surface-tension liquid from the upper surface of the substrate by enlarging the opening.

9 . The substrate processing method according to claim 1 , wherein the substrate drying step includes a heater-unit moving step of allowing the heater unit to approach the lower surface of the substrate in order to bring the facing surface into contact with the lower surface of the substrate being in a state in which the rotation has been stopped.

10 . The substrate processing method according to claim 1 , wherein a composition of the first organic solvent is identical with a composition of the second organic solvent.

11 . A substrate processing apparatus comprising:
a substrate-holding-rotating unit that rotates a substrate held horizontally around a predetermined rotational axis along a vertical direction; a first organic-solvent supplying unit that supplies a first organic solvent that is used to process an upper surface of the substrate to the upper surface of the substrate in order to form a liquid film of the first organic solvent on the upper surface of the substrate; a heater unit that has a facing surface facing a lower surface of the substrate and that is relatively movable to the substrate-holding-rotating unit between a contact position that the heater unit is in contact with the substrate and a separation position that the heater unit is separated from the substrate; and a second organic-solvent supplying unit that supplies a vapor of a second organic solvent to a space between the lower surface of the substrate and the facing surface of the heater unit.

12 . The substrate processing apparatus according to claim 11 further comprising a controller that is programmed to perform a substrate rotating step of rotating the substrate by the substrate-holding-rotating unit, a liquid-film forming step of forming the liquid film of the first organic solvent on the upper surface of the substrate by supplying the first organic solvent to the upper surface of the substrate from the first organic-solvent supplying unit, a vapor supplying step of supplying the vapor of the second organic solvent to the space from the second organic-solvent supplying unit, a substrate heating step of heating the substrate by means of the vapor of the second organic solvent in parallel with the substrate rotating step and the liquid-film forming step, and a substrate drying step of, after the substrate heating step, excluding the liquid film of the first organic solvent from the substrate, and drying the upper surface of the substrate in a state in which the rotation of the substrate is stopped by the substrate-holding-rotating unit and the substrate is in contact with the heater unit.

13 . The substrate processing apparatus according to claim 12 further comprising: a low-surface-tension liquid supplying unit that supplies a low-surface-tension liquid whose surface tension is lower than water to the upper surface of the substrate,
wherein the controller is programmed to perform a liquid-film forming step of excluding the liquid film of the first organic solvent from the upper surface of the substrate and forming a liquid film of the low-surface-tension liquid on the upper surface of the substrate by supplying the low-surface-tension liquid from the low-surface-tension liquid supplying unit, and an excluding step of excluding the liquid film of the low-surface-tension liquid from the upper surface of the substrate.

14 . The substrate processing apparatus according to claim 13 further comprising: an inert-gas supplying unit that supplies an inert gas to a central area of the liquid film of the low-surface-tension liquid,
wherein the controller is programmed to perform an opening forming step of forming an opening in the central area of the liquid film of the low-surface-tension liquid by supplying an inert gas from the inert-gas supplying unit, and an opening enlarging step of excluding the liquid film of the low-surface-tension liquid from the upper surface of the substrate by enlarging the opening.

15 . The substrate processing apparatus according to claim 11 , whe

Assignees

• Screen Holdings Co Ltd

Inventors

• Yoshihara Naohiko
• Okutani Manabu
• Ota Takashi
• Abe Hiroshi

Classifications

• H10P72/0448

  Apparatus for applying a liquid, a resin, an ink or the like · CPC title

• H10P72/0451

  Apparatus for manufacturing or treating in a plurality of work-stations · CPC title

• H10P72/0431

  Apparatus for thermal treatment · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P72/0408

  for drying · CPC title