Middle of the line self-aligned direct pattern contacts

Patent metadata

Field	Value
Publication number	US-10522403-B2
Application number	US-201815868479-A
Country	US
Kind code	B2
Filing date	Jan 11, 2018
Priority date	Jan 11, 2018
Publication date	Dec 31, 2019
Grant date	Dec 31, 2019

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to middle of the line self-aligned direct pattern contacts and methods of manufacture. The structures described herein include: at least one gate structure with a metallization and source/drain regions; a source/drain contact in electrical connection with the source/drain regions, respectively; and a contact structure with a re-entrant profile in electrical connection with the source/drain contact and the metallization of the at least one gate structure, respectively.

First claim

What is claimed:

1. A structure comprising:
a plurality of gate structures each composed of a metallization and source/drain regions;
a plurality of source/drain contacts each of which are in electrical connection with the source/drain regions;
spacers which separate each of the plurality of gate structures from each of the plurality of source/drain contacts;
a first contact structure with a re-entrant profile and a stepped profile overhanging the spacers on opposing sides of a selected source drain/contact of the plurality of source/drain contacts, the first contact structure being in electrical connection with the selected source/drain contact;
a second contact structure with a re-entrant profile and a stepped profile overhanging the spacers on opposing sides of at least one selected gate structure of the plurality of gate structures, the second contact being in electrical connection with the metallization of the at least one selected gate structure; and
additional contact structures in electrical contact with selected source/drain contacts and the metallization of additional selected gate structures of the plurality of gate structures, the additional contact structures having a reverse tapered profile and at least one of the additional contact structures being in electrical connection with two of the additional selected gate structures while also spanning over a source/drain contact between the two additional selected gate structures.

2. The structure of claim 1 , wherein the re-entrant profile is a reverse tapered profile, with a larger cross-sectional portion extending into a straight profile between the spacers and in electrical connection with the source/drain contact and the metallization of the at least one gate structure and a smaller cross-sectional portion at a top portion thereof.

3. The structure of claim 2 , further comprising:
capping materials provided on a top of remaining source/drain contacts and the gate structures.

4. The structure of claim 3 , wherein the capping materials are provided directly on a top surface of the source drain contact between the two additional selected gate structures to electrically isolate the contact structure between the two additional selected gate structures from the remaining source/drain contacts and the gate structures.

5. The structure of claim 3 , wherein the plurality of contact structures are formed from a single metallized feature for the electrical connection with the selected source/drain contacts and the metallization of the selected gate structures.

6. The structure of claim 3 , further comprising metal wiring features in electrical connection with sidewalls of selected ones of the additional contact structures, wherein the metal wiring features and the selected ones of the additional contact structures are on a same wiring level in a tip-to-tip connection in a lateral orientation.

7. The structure of claim 3 , further comprising metal wiring features at a same plane as the plurality of contacts, wherein the metal wiring features are at a first wiring layer and are electrically isolated from the metallization of the additional gate structures and the source/drain contacts by respective capping material.

8. The structure of claim 7 , wherein the metal wiring features and the plurality of contacts are merged into single construct formed of a single metallization layer.

9. The structure of claim 6 , wherein the metal wiring features are in a negative enclosure between selected contact structures in electrical connection with the source/drain contacts.

10. The structure of claim 3 , further comprising airgaps formed between selected contact structures.

11. The structure of claim 1 , wherein the contact structure and an additional via contact and wiring structure form a super via in contact with at least one of source/drain contact or a gate contact.

12. A structure comprising:
a plurality of gate structures each of which are composed of a metallization and source/drain regions;
a plurality of source/drain contacts in electrical connection with the source/drain regions of the plurality of gate structures;
a first set of contact structures with a re-entrant profile in electrical connection with selected source/drain contacts of the plurality of source source/drain contacts and an overhang that overlaps onto spacers on opposing sides of the selected source/drain contacts;
a second set of contact structures with a re-entrant profile in electrical connection with the metallization of selected gate structures of the plurality of gate structures and an overhang that overlaps onto spacers on opposing sides of the selected gate structures;
metal wiring features in electrical connection with sidewalls of selected ones of the first set and second set of the plurality of contact structures; and
an additional contact structure with a reverse tapered profile spanning over a source/drain contact of the plurality of source/drain structures and in electrical connection with two of the plurality of gate structures.

13. The structure of claim 12 , wherein the metal wiring features and the selected ones of the first set and the second set of the plurality of contact structures are on a same wiring plane in a tip-to-tip connection in a lateral orientation.

14. The structure of claim 12 , wherein the first set and second set of the plurality of contact structures are self-aligned direct pattern contacts.

15. The structure of claim 12 , wherein the first set and second set of the plurality of contact structures are formed from a single metallized feature for the electrical connection with the selected source/drain contacts and the metallization of the selected gate structures.

16. The structure of claim 12 , wherein at least one of the metal wiring features is in a negative enclosure between selected contact structures of the first set of contact structures, wherein the metal wiring is metallized together with the first and second set of contacts.

17. The structure of claim 12 , wherein the re-entrant profile is a reverse tapered profile, with a larger cross-sectional portion extending into a straight profile between the spacers and in electrical connection with the selected source/drain contacts and the metallization of the selected gate structures of the plurality of gate structures.

18. The structure of claim 17 , further comprising capping material on the source/drain contacts and metallization of gate structures which do not have an electrical connection to the first set of contact structures and the second set of contact structures wherein the capping material provides electrical isolation from the first set of contact structures and the second set of contact structures.

19. The structure of claim 12 , wherein the contact structure and an additional via contact and wiring structure form a super via in contact with the source/drain contact or a gate contact.

20. The structure of claim 12 , further comprising:
a capping material directly on a top surface of the source/drain contact of the plurality of source/drain structures to electrically isolate the source/drain contact of the plurality of source/drain structures from the additional contact structure; and
a wiring which is in electrical connection and directly contacts two of the plurality of source/drain contacts, the wiring and the two of the plurality of source/drain contacts are in a same wiring plane in a tip-to-tip connection in a lateral orientation.

Assignees

• Globalfoundries Inc

Inventors

• Stephens Jason E
• Chanemougame Daniel
• Xie Ruilong
• Liebmann Lars W
• Northrop Gregory A

Classifications

• H10W20/0633

  using subtractive patterning of the conductive members · CPC title

• H10W20/421

  Skip vias, i.e. vias that do not connect all metallization layers that they pass through · CPC title

• H10W20/0693

  by forming self-aligned vias · CPC title

• H10W20/4437

  the principal metal being a transition metal · CPC title

• H10W20/072

  of dielectric parts comprising air gaps · CPC title