Electrostatic chuck, substrate processing apparatus, and method of manufacturing semiconductor device using the same

Patent metadata

Field	Value
Publication number	US-10522374-B2
Application number	US-201715857047-A
Country	US
Kind code	B2
Filing date	Dec 28, 2017
Priority date	Jul 4, 2017
Publication date	Dec 31, 2019
Grant date	Dec 31, 2019

Abstract

An electrostatic chuck, a substrate processing apparatus, and a method of manufacturing a semiconductor device are provided. The electrostatic chuck comprises a chuck base, an insulation plate on the chuck base, a first heater comprising a cell heater in the insulation plate, and a heater controller configured to control the cell heater. The heater controller obtains a resistance of the cell heater and compares the resistance with a threshold value to control a heating power provided to the cell heater.

First claim

What is claimed is:

1. An electrostatic chuck, comprising:
a chuck base;
an insulation plate on the chuck base;
a first heater comprising a cell heater in the insulation plate; and
a heater controller configured to control the cell heater by providing a heating power based on a comparison between a resistance of the cell heater and a threshold value,
wherein the first heater further comprises a first fan electrode that is disposed in the insulation plate between the cell heater and the heater controller and is aligned with the cell heater,
wherein the cell heater comprises a plurality of cell heaters, and the first fan electrode comprises a plurality of first fan electrodes,
wherein each of the plurality of first fan electrodes comprises:
a plurality of power electrodes configured to provide powers to the plurality of cell heaters; and
a second ground electrode configured to ground the plurality of cell heaters and is disposed between the plurality of power electrodes,

wherein the plurality of power electrodes comprise:
a first outer electrode on a first side of the second ground electrode;
a first inner electrode inside the first outer electrode in a central direction of the insulation plate;
a second outer electrode on a second side of the second ground electrode; and
a second inner electrode inside the second outer electrode in the central direction of the insulation plate, and

wherein the second ground electrode is disposed between the first inner electrode and the second inner electrode and between the first outer electrode and the second outer electrode.

2. The electrostatic chuck of claim 1 , wherein the heater controller comprises a voltage meter configured to detect a voltage between a first terminal and a second terminal of the cell heater in response to a sensing power provided to the cell heater.

3. The electrostatic chuck of claim 2 , wherein the heater controller further comprises:
a first switch configured to switch the heating power; and
a second switch configured to switch the sensing power, and configured to turn on conversely to a turn-on operation of the first switch.

4. The electrostatic chuck of claim 2 , wherein the heater controller further comprises a temperature controller configured to obtain the resistance of the cell heater by using the voltage detected by the voltage meter, and configured to provide the heating power to the cell heater in response to the resistance being less than the threshold value.

5. The electrostatic chuck of claim 4 , wherein the temperature controller is configured to hold heating of the cell heater in response to the resistance being greater than the threshold value.

6. The electrostatic chuck of claim 1 , wherein each of the plurality of cell heaters comprises:
a first outer heater and a second outer heater of which first sides are respectively connected to a first side of the first outer electrode and a first side of the second outer electrode; and
a first inner heater and a second inner heater of which first sides are respectively connected to a first side of the first inner electrode and a first side of the second inner electrode,
wherein the second ground electrode is connected to second sides of the first outer heater and the second outer heater and second sides of the first inner heater and the second inner heater.

7. An electrostatic chuck, comprising:
a chuck base;
an insulation plate on the chuck base;
a first heater comprising a cell heater in the insulation plate;
a heater controller configured to control the cell heater by providing a heating power based on a comparison between a resistance of the cell heater and a threshold value, wherein the first heater further comprises a first fan electrode that is disposed in the insulation plate between the cell heater and the heater controller and is aligned with the cell heater, and wherein the cell heater comprises a plurality of cell heaters, the plurality of cell heaters being disposed on an edge region of the insulation plate;
a second heater comprising a plurality of ring heaters between the first heater and the chuck base and a plurality of second fan electrodes between the plurality of ring heaters and the chuck base, the plurality of ring heaters being on a central region of the insulation plate; and
a ground plate between the second heater and the chuck base and connected to a ground electrode, the ground plate having the same diameter as those of the plurality of second fan electrodes.

8. A substrate processing apparatus, comprising:
a chamber; and
an electrostatic chuck in the chamber and on which a substrate is placed,
wherein the electrostatic chuck comprises:
a chuck base;
an insulation plate on the chuck base;
a first heater comprising a cell heater in the insulation plate; and
a heater controller configured to control the cell heater by providing a heating power based on a comparison between a resistance of the cell heater and a threshold value,

wherein the first heater further comprises a first fan electrode that is disposed in the insulation plate between the cell heater and the heater controller and is aligned with the cell heater,
wherein the cell heater comprises a plurality of cell heaters, and the first fan electrode comprises a plurality of first fan electrodes,
wherein each of the plurality of first fan electrodes comprises:
a plurality of power electrodes configured to provide powers to the plurality of cell heaters; and
a second ground electrode configured to ground the plurality of cell heaters and is disposed between the plurality of power electrodes,

wherein the plurality of power electrodes comprise:
a first outer electrode on a first side of the second ground electrode;
a first inner electrode inside the first outer electrode in a central direction of the insulation plate;
a second outer electrode on a second side of the second ground electrode; and
a second inner electrode inside the second outer electrode in the central direction of the insulation plate, and

wherein the second ground electrode is disposed between the first inner electrode and the second inner electrode and between the first outer electrode and the second outer electrode.

9. The substrate processing apparatus of claim 8 , further comprising a heater power supply that is disposed outside the chamber and is connected to the heater controller,
wherein the heater power supply comprises:
a first power source configured to provide the heating power to heat the cell heater; and
a second power source configured to provide a sensing power to measure the resistance.

10. The substrate processing apparatus of claim 9 , wherein the heater controller comprises a voltage meter configured to detect a voltage between a first terminal and a second terminal of the cell heater between the second power source and a ground.

11. The substrate processing apparatus of claim 10 , wherein the heater controller further comprises:
a first switch connected between the cell heater and the first power source;
a second switch connected between the cell heater and the second power source, wherein the second switch is turned on conversely to a turn-on operation of the first switch; and
a temperature controller configured to obtain the resistance of the cell heater based on a voltage of the sensing power, and configured to compare the measured resistance with the threshold value to control the first switch and the second switch.

12. The substrate processing apparatus of claim 11 , wherein, when the resistance is greater than the threshold value, the temperature controller is configured to turn off the first switch and hold heat

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Minsung
• Park Myoung Soo
• Yeo Dongyun
• Sung Dougyong
• Lee Suho
• Jeon Yun-Kwang

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/268

  of silicon-containing layers · CPC title

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P72/722 Primary

  Details of electrostatic chucks · CPC title

• H10P72/0432

  mainly by conduction · CPC title