Semiconductor device and method for fabricating the same

Patent metadata

Field	Value
Publication number	US-10515976-B2
Application number	US-201815885878-A
Country	US
Kind code	B2
Filing date	Feb 1, 2018
Priority date	Feb 1, 2018
Publication date	Dec 24, 2019
Grant date	Dec 24, 2019

Abstract

A semiconductor device includes a semiconductor substrate, an isolation structure; a first gate dielectric layer and a first gate electrode. The isolation structure is formed in the semiconductor substrate to divide the semiconductor substrate at least into a first active region and a second active region. The first gate dielectric layer is disposed on the first active region, and has a plane top surface contacting to a sidewall of the isolation structure and forming an acute angle therewith. The first gate electrode stacked on the plane top surface.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor substrate;
an isolation structure, formed in the semiconductor substrate to at least divide the semiconductor substrate into a first active region, a second active region and a third active region;
a first gate dielectric layer, comprising a high dielectric constant material, disposed on the first active region, and having a plane top surface directly contacting to a sidewall of the isolation structure and forming an acute angle therewith;
a first gate electrode, stacked on the plane top surface;
a second gate dielectric layer made of silicon dioxide, and disposed on the second active region;
a second gate electrode, stacked on the second gate dielectric layer;
a dielectric layer, disposed on the third active region and having an oxide-nitride-oxide (ONO) charge trapping structure; and
a third gate electrode, stacked on the dielectric layer.

2. The semiconductor device according to claim 1 , wherein the isolation structure has a top surface substantially higher than the plane top surface of the first gate dielectric layer as calculated from the semiconductor substrate.

3. The semiconductor device according to claim 1 , wherein the first gate electrode comprises poly-silicon.

Assignees

• United Microelectronics Corp

Inventors

• Chang Wen-Chung
• Chen Tzu-Ping

Classifications

• H10D64/01332

  Making the insulator · CPC title

• H01L21/28158

  Electricity · mapped topic

• H01L27/11575

  Electricity · mapped topic

• H01L29/513

  Electricity · mapped topic

• H01L29/518

  Electricity · mapped topic