Memory cell and manufacturing method thereof
US-9209198-B2 · Dec 8, 2015 · US
Nonvolatile memory device and method for fabricating the same
US9166013B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9166013-B2 |
| Application number | US-201314020645-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 6, 2013 |
| Priority date | Apr 18, 2013 |
| Publication date | Oct 20, 2015 |
| Grant date | Oct 20, 2015 |
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Abstract
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A nonvolatile memory device having a plurality of unit cells, each of the plurality of unit cells includes a first transistor suitable for having a fixed threshold voltage, and a second transistor suitable for coupling to the first transistor in parallel and having a variable threshold voltage.
First claim
Opening claim text (preview).
What is claimed is: 1. A nonvolatile memory device, comprising: an isolation trench formed on a substrate and defining an active region; a charge trapping layer formed on a surface of the isolation trench; a gap-fill insulating layer partially filling the isolation trench on the charge trapping layer; a gate formed on the substrate and filling a remaining isolation trench on the gap-fill insulating layer; and a source and a drain formed on the active region under both side…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D30/691Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9166013B2 cover?
- A nonvolatile memory device having a plurality of unit cells, each of the plurality of unit cells includes a first transistor suitable for having a fixed threshold voltage, and a second transistor suitable for coupling to the first transistor in parallel and having a variable threshold voltage.
- Who is the assignee on this patent?
- Sk Hynix Inc
- What technology area does this patent fall under?
- Primary CPC classification H10D30/691. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Oct 20 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).