Ceramic Wiring Substrate, Semiconductor Device, And Method For Manufacturing Ceramic Wiring Substrate
US-2015351241-A1 · Dec 3, 2015 · US
US10512988B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10512988-B2 |
| Application number | US-201515128181-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 24, 2015 |
| Priority date | Mar 25, 2014 |
| Publication date | Dec 24, 2019 |
| Grant date | Dec 24, 2019 |
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Official abstract text for this publication.
The present invention provides a coated solder material that is capable of preventing the advancement of oxidation of the surface during long-term storage and when melted, and that has excellent wetting extendability and bondability, without the occurrence of gaps in the bonded areas. A coating film is formed on the surface of a solder material; the coating film including a carbon compound that is formed by introducing an organic compound having a carbon number of 8 or less together with a carrier gas into a reaction gas that has been plasmatized under atmospheric pressure, and after a radicalized organic compound has been formed by radicalizing the organic compound, causing the radicalized organic compound to react with the metal on the surface of the solder material; the thickness of the coating film is 4 nm to 200 nm, and when heated at 150° C. to 300° C. and melted, the mass-reduction rate is 60% or greater.
Opening claim text (preview).
What is claimed is: 1. A coated solder material comprising; a solder material including a metal and having a surface, and a coating film formed on the surface of the solder material; the coating film including a carbon compound that is formed by introducing an organic compound having a carbon number of 8 or less together with a carrier gas into a reaction gas that has been plasmatized under atmospheric pressure, and then after a radicalized organic compound has been formed by radicalizing the organic compound, causing the radicalized organic compound to react with the metal on the surface of the solder material to form the carbon compound; and the coating film having a thickness of 4 nm to 200 nm, and a mass-reduction rate is 60% or greater after the coating film is heated at 150° C. to 300° C. and melted. 2. The coated solder material according to claim 1 , wherein the difference between the maximum value and the minimum value of the thickness of the coating film is 10 nm or less. 3. The coated solder material according to claim 1 , wherein when an outer diameter of the solder material that is processed into a wire shape is taken to be r, and when an outer diameter of the solder material that is bonded to a Cu substrate is taken to be d by making the solder material stand up on the Cu substrate that has been heated for 25 seconds at a temperature that is 50° C. higher than a melting point of the solder material, then further heated for another 25 seconds and cooled to a room temperature, and when a ratio of d with respect to r is defined as a wetting extendability X, the ratio of the wetting extendability X m of the coated solder material formed by coating the solder material with the coating film with respect to the wetting extendability X R of an uncoated solder material is within a range of 1.05 to 1.60. 4. The coated solder material according to claim 1 , wherein the solder material is one kind selected from among a group of Bi solder material, Bi—Sn solder material, Pb solder material, Sn solder material, Au solder material, In solder material, or Zn—Sn solder material.
Bi as the principal constituent · CPC title
Sheets or foils (B23K35/0244 takes precedence) · CPC title
for use in soldering or brazing (B23K35/0205 takes precedence) · CPC title
using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title
Pb as the principal constituent · CPC title
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