Gigasonic cleaning techniques

Patent metadata

Field	Value
Publication number	US-10512946-B2
Application number	US-201514844406-A
Country	US
Kind code	B2
Filing date	Sep 3, 2015
Priority date	Sep 3, 2015
Publication date	Dec 24, 2019
Grant date	Dec 24, 2019

Abstract

The present disclosure provides a semiconductor cleaning system. The cleaning system includes a chamber to retain a cleaning solution, and a gigasonic frequency generator. The gigasonic frequency generator is configured to generate an electrical signal corresponding to a range of gigahertz frequencies. A transducer is configured to transform the electrical signal to a mechanical wave of pressure and displacement that propagates through the cleaning solution with oscillations within the range of gigahertz frequencies.

First claim

What is claimed is:

1. A semiconductor cleaning system comprising:
a chamber having sidewalls connected to a bottom plate and defining an interior region and an exterior region, the interior region configured to retain a cleaning solution and a semiconductor wafer, and the exterior region being separated from the cleaning solution;
a first frequency generator configured to generate electrical signals having a first frequency in a range of gigahertz frequencies;
a second frequency generator configured to generate electrical signals having a second frequency in a range of megahertz or ultrasonic frequencies;
a first transducer arranged on the exterior region of the chamber, and mechanically coupled to the bottom plate such that an upper surface of the first transducer is both below a topmost surface of the bottom plate and above a bottommost surface of the bottom plate, and wherein the first transducer is electrically coupled to one of the first or second frequency generators; and
a second transducer arranged on the exterior region of the chamber, mechanically coupled to the sidewall and electrically coupled to another of the first or second frequency generators; and
a controller configured to select one of the first or second frequencies for application by the first transducer to the cleaning solution and to select the other of the first or second frequencies for application by the second transducer to the cleaning solution, the controller configured to make the selection of the one frequency and the other frequency, which are different, based on size of unwanted particles to be removed from the semiconductor wafer.

2. The system of claim 1 , wherein the chamber is configured to retain the semiconductor wafer in direct fluid communication with the cleaning solution, wherein the semiconductor wafer includes the unwanted particles or contaminants including photoresist on a surface of the semiconductor wafer.

3. The system of claim 2 , wherein a first group of the unwanted particles are smaller than about 20 nanometers.

4. The system of claim 3 , wherein a second group of the unwanted particles are smaller than about 550 nanometers.

5. The system of claim 2 , wherein the semiconductor wafer includes trench features and wherein at least a portion of the unwanted particles are at surfaces of the trench features.

6. The system of claim 2 , wherein the system is configured to substantially remove the unwanted particles from the semiconductor wafer using the cleaning solution without substantially removing other material from the semiconductor wafer.

7. The system of claim 2 , wherein the first transducer or the second transducer generates mechanical waves of pressure and displacement that propagate through the cleaning solution without causing cavitation.

8. The system of claim 7 , wherein the first transducer is coupled to the first frequency generator and is configured to induce a gigasonic boundary layer within 20 nanometers of the surface of the semiconductor wafer.

9. The system of claim 8 , wherein the first transducer is configured to induce a gigasonic bulk flow region abutting the gigasonic boundary layer and extending outwardly away from the gigasonic boundary layer relative to the surface of the semiconductor wafer.

10. The system of claim 9 , wherein the gigasonic bulk flow region exhibits a streaming velocity on an order of 105 m/s.

11. The system of claim 2 , wherein the controller is coupled to the first frequency generator and coupled to an endpoint detection unit, wherein the endpoint detection unit is configured to detect a level of contaminants, and wherein the endpoint detection unit monitors the surface of the semiconductor wafer or the cleaning solution and transmits a signal to the controller that cleaning is complete based on the level of contaminants.

12. The system of claim 1 , further comprising:
a support structure, arranged over the bottom plate, that has a first groove and a second groove, wherein the first groove and the second groove are configured to respectively hold a first semiconductor wafer and a second semiconductor wafer such that faces of the first and second semiconductor wafers are parallel to one another and perpendicular to the bottom plate.

13. A semiconductor cleaning system comprising:
a chamber comprising sidewalls connected to a bottom plate and configured to retain a cleaning solution;
a semiconductor wafer disposed within the chamber, wherein the semiconductor wafer includes unwanted particles on a face of the semiconductor wafer;
a wafer support structure arranged above the bottom plate and configured to hold the semiconductor wafer in a vertical orientation such that the face of the semiconductor wafer is perpendicular to the bottom plate of the chamber;
a first frequency generator configured to generate first electrical signals having a first range of frequencies comprising a gigahertz frequency, and a second frequency generator configured to generate second electrical signals having a second range of frequencies comprising a megahertz or ultrasonic frequency;
a first transducer coupled to the first frequency generator and configured to transform the first electrical signals to a first mechanical wave of pressure and displacement that propagates through the cleaning solution in a first direction;
a second transducer coupled to the second frequency generator and configured to transform the second electrical signals to a second mechanical wave of pressure and displacement that propagates through the cleaning solution in a second direction, wherein the first and second transducers are independently movable along substantially orthogonal axes arranged along the sidewalls and the bottom plate, respectively; and
a controller configured to select one of the first or second range of frequencies for application by the first transducer to the cleaning solution and to select the other of the first or second range of frequencies for application by the second transducer to the cleaning solution, the controller configured to make the selection based on a particle size of at least one of the unwanted particles to be removed from the semiconductor wafer.

14. The system of claim 13 , where the controller is coupled to the first and second frequency generators and coupled to an endpoint detection unit, wherein the endpoint detection unit is configured to detect a level of the unwanted particles, and wherein the endpoint detection unit monitors the face of the semiconductor wafer or the cleaning solution and signals the controller that cleaning is completed based on the level of the unwanted particles.

15. The system of claim 13 , wherein the first transducer generates the first mechanical wave of pressure and displacement at a first frequency and at a first power level, and the second transducer generates the second mechanical wave of pressure and displacement at a second frequency and at a second power level, and wherein the first frequency differs from the second frequency, and wherein the first power level differs from the second power level.

16. The system of claim 13 , wherein a first group of the unwanted particles are smaller than about 20 nanometers.

17. The system of claim 16 , wherein a second group of the unwanted particles are smaller than about 550 nanometers.

18. The system of claim 17 , wherein the first electrical signals are selected to remove the first group of the unwanted particles from the semiconductor wafer, and the second electrical signals are selected to remove the second group of the unwanted particl

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chien Ying-Hsueh Chang
• Yang Chi-Ming

Classifications

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P72/0416 Primary

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title

• B06B3/00

  Methods or apparatus specially adapted for transmitting mechanical vibrations of infrasonic, sonic, or ultrasonic frequency · CPC title