Optical semiconductor device, semiconductor laser module, and optical fiber amplifier
US-10020638-B2 · Jul 10, 2018 · US
Wavelength-variable laser
US10511150B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10511150-B2 |
| Application number | US-201816029285-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 6, 2018 |
| Priority date | Apr 6, 2012 |
| Publication date | Dec 17, 2019 |
| Grant date | Dec 17, 2019 |
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- Title
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Abstract
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A wavelength-variable laser outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.
First claim
Opening claim text (preview).
What is claimed is: 1. A wavelength-variable laser outputting a predetermined wavelength of laser light comprising: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer, wherein the wavelength-variable laser has a function to select a specific wavelength by returning a specific wavelength in the wavelength-variable laser. 2. The wavelength-variable laser according to claim 1 , further comprising a current constriction structure positioned at both sides of width direction of the quantum well active layer, wherein the electric-field-distribution-control layer is formed to overlap with the current constriction structure in the thickness direction. 3. The wavelength-variable laser according to claim 1 , wherein the semiconductor layers constituting the electric-field-distribution-control layer are constituted by a first semiconductor layer made from semiconductor material having band gap energy that is the same as the n-type cladding layer and a second semiconductor layer made from semiconductor material having band gap energy greater than the barrier layer constituting the quantum well active layer. 4. The wavelength-variable laser according to claim 3 , wherein the first semiconductor layer is made from InP, and the second semiconductor layer is made from III-V group compound semiconductor including an As atom and a P atom as composition. 5. The wavelength-variable laser according to claim 4 , wherein the second semiconductor layer is made from GaInAsP, and a sum of layer thicknesses of the second semiconductor layers constituting the electric-field-distribution-control layer is equal to or smaller than 1 μm. 6. The wavelength-variable laser according to claim 5 , wherein band gap composition wavelength of GaInAsP constituting the second semiconductor layer is equal to or greater than 1 μm.
Assignees
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Classifications
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p-doping · CPC title
Measuring characteristics or properties thereof (measuring techniques per se G01J, G01K, G01N, G01R) · CPC title
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- What does patent US10511150B2 cover?
- A wavelength-variable laser outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer position…
- Who is the assignee on this patent?
- Furukawa Electric Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H01S5/3216. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 17 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).