Optical semiconductor device, semiconductor laser module, and optical fiber amplifier

Patent metadata

Field	Value
Publication number	US-9601905-B2
Application number	US-201514795387-A
Country	US
Kind code	B2
Filing date	Jul 9, 2015
Priority date	Apr 6, 2012
Publication date	Mar 21, 2017
Grant date	Mar 21, 2017

Abstract

An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.

First claim

What is claimed is:

1. A semiconductor optical amplifier configured to amplify a predetermined wavelength of light comprising:
a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction;
a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and
an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.

2. A semiconductor laser module comprising:
a semiconductor optical amplifier configured to amplify a predetermined wavelength of laser light including:
a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction,
a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer, and
an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer;

a semiconductor laser element configured to output laser light to be amplified by the semiconductor optical amplifier;
a temperature-control module configured to control temperature of the semiconductor laser element;
an optical fiber configured to guide the laser light amplified by and outputted from the semiconductor optical amplifier to outside; and
an optical-coupling lens system optically coupling the semiconductor optical amplifier and the optical fiber.

Assignees

• Furukawa Electric Co Ltd

Inventors

• Yoshida Junji
• Itoh Hirokazu
• Irino Satoshi
• Irie Yuichiro
• Sawamura Taketsugu

Classifications

• H01S5/2205

  comprising special burying or current confinement layers · CPC title

• H01S3/302

  in an optical fibre · CPC title

• H01S5/2222

  having special electric properties · CPC title

• H01S3/094011

  with bidirectional pumping, i.e. with injection of the pump light from both two ends of the fibre · CPC title

• H01S5/34

  comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers (H01S5/36 takes precedence) · CPC title