Aqueous low abrasive silica slurry and amine carboxylic acid compositions for use in shallow trench isolation and methods of making and using them

Patent metadata

Field	Value
Publication number	US-10508221-B2
Application number	US-201715718998-A
Country	US
Kind code	B2
Filing date	Sep 28, 2017
Priority date	Sep 28, 2017
Publication date	Dec 17, 2019
Grant date	Dec 17, 2019

Abstract

The present invention provides aqueous chemical mechanical planarization (CMP) polishing compositions comprising one or more dispersions of colloidal silica particles having a zeta potential of from +5 to +50 mV and having one or more aminosilane group, preferably, elongated, bent or nodular colloidal silica particles, or, more preferably, such particles which contain a cationic nitrogen atom, and at least one amine heterocycle carboxylic acid having an isolectric point (pI) of from 2.5 to 5, preferably, from 3 to 4. The compositions have a pH of from 2.5 to 5.3. Preferably, the amine heterocycle carboxylic acid is an amine-containing heterocyclic monocarboxylic acid, such as nicotinic acid, picolinic acid, or isonicotinic acid. The compositions enable enhanced oxide:nitride removal rate ratios.

First claim

We claim:

1. An aqueous chemical mechanical planarization polishing composition comprising an abrasive of one or more dispersions of colloidal silica particles having one or more aminosilane compounds bonded to a surface of the colloidal silica particles, wherein the one or more dispersions of a plurality of colloidal silica particles has a zeta potential of from +5 to +50 mV at the pH of the composition, and at least one amine heterocycle carboxylic acid having an isolectric point (pI) from 3 to 4.5, a cationic polymer comprising a diallyldialkylamine salt having a cationic nitrogen, a diallylamine salt having a cationic amine group or a diallylalkylamine salt having a cationic amine group, and one or more compounds containing two quaternary ammonium groups, the composition has a pH of from 2.5 to 5.3, and, further wherein, the amount of the abrasive particles as solids, ranges from 0.01 to 20 wt. %, based on the total weight of the composition, and the composition is free of oxidizer compounds.

2. The aqueous chemical mechanical planarization polishing composition as claimed in claim 1 , wherein at least one of the dispersions of colloidal silica particles comprises elongated, bent or nodular colloidal silica particles or their mixture with one or more dispersions of spherical colloidal silica particles.

3. The aqueous chemical mechanical planarization polishing composition as claimed in claim 2 , wherein the abrasive comprises a mixture of a dispersion of a plurality of elongated, bent or nodular colloidal silica particles which contain a cationic nitrogen atom, or a mixture thereof with a dispersion of a plurality of spherical colloidal silica particles, wherein the amount of the dispersion of the elongated, bent or nodular colloidal silica particles ranges from 50 to 99.9 wt. %, based on the total solids weight of the abrasive.

4. The aqueous chemical mechanical planarization polishing composition as claimed in claim 1 , wherein the one or more aminosaline compounds are chosen from an aminosilane containing one or more tertiary amine groups, or one or more secondary amine groups, or one or more primary amine groups.

5. The aqueous chemical mechanical planarization polishing composition as claimed in claim 4 , wherein the amount of the aminosaline compounds range from 0.0010 to 0.5 wt. %, based on the total silica solids in the aqueous chemical mechanical planarization polishing compositions.

6. The aqueous chemical mechanical planarization polishing composition as claimed in claim 1 , wherein the compound containing one or more amine heterocycle carboxylic acids is chosen from N-containing heterocyclic monocarboxylic acids.

7. The aqueous chemical mechanical planarization polishing composition as claimed in claim 6 , wherein the amine heterocycle carboxylic acid is chosen from nicotinic acid, picolinic acid, or isonicotinic acid.

8. The aqueous chemical mechanical planarization polishing composition as claimed in claim 1 , wherein the amount of amine heterocycle carboxylic acid ranges from 10 to 5000 ppm based on the total silica solids in the aqueous chemical mechanical planarization polishing composition.

Assignees

• Rohm & Haas Elect Materials Cmp Holdings Inc

Inventors

• Guo Yi
• Mosley David
• Penta Naresh Kumar

Classifications

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• B24B37/044

  characterised by the composition of the lapping agent · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• C09K3/1436

  Composite particles, e.g. coated particles · CPC title

• H01L21/76224

  Electricity · mapped topic