Methods and apparatus for calculating substrate model parameters and controlling lithographic processing

US10495990B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10495990-B2
Application numberUS-201515528693-A
CountryUS
Kind codeB2
Filing dateNov 12, 2015
Priority dateDec 12, 2014
Publication dateDec 3, 2019
Grant dateDec 3, 2019

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Abstract

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Metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a substrate edge. The edge basis function may, for example, be an exponential decay function or a rational function. Lithographic processing of a subsequent substrate is controlled using the calculated high-order substrate model parameters, in combination with low-order substrate model parameters obtained by fitting inline measurements to a low order model.

First claim

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The invention claimed is: 1. A method of controlling a lithographic apparatus configured for processing a substrate, the processing comprising applying a pattern to the substrate, and the method comprising: using a mathematical substrate model for representing disturbances of first features on the substrate, the mathematical substrate model including a predefined edge basis function and at least one substrate model parameter, wherein the edge basis function is representative of spatial dependence of a specific one of the disturbances related to only an area of the substrate near an edge of the substrate; receiving measurements of second features, similar to the first features, on at least one previous substrate, other than or in addition to the substrate, that has been subjected to the processing; using the measurements and the edge basis function to determine a value of the substrate model parameter; and controlling the lithographic apparatus in accordance with the mathematical substrate model using the value of the substrate model parameter. 2. The method of claim 1 , wherein the edge basis function decreases monotonically with increasing distance from the edge. 3. The method of claim 1 , wherein the edge of the substrate is generally circular; and the edge basis function is a radial basis function. 4. The method of claim 1 , comprising selectively enabling or selectively disabling including the edge basis function into the mathematical substrate model. 5. The method of claim 1 , wherein the substrate model parameter comprises at least two parameters related to the edge basis function. 6. The method of claim 1 , wherein the substrate model represents disturbances in a selected direction in the plane of the substrate. 7. The method of claim 1 , wherein the mathematical substrate model further comprises one or more substrate basis functions having at least five substrate basis function parameters, wherein the one or more substrate basis functions are representative of the specific one of the disturbances related to an area of the substrate including an area outside of the area of the substrate near the edge of the substrate as well including the area of the substrate near the edge of the substrate, and wherein the substrate model parameter is at least one edge basis function parameter of the predefined edge basis function. 8. A non-transitory computer program product comprising machine-readable instructions for being executed by a data processing apparatus, wherein the machine-readable instructions comprise; instructions configured for invoking a mathematical substrate model for representing disturbances of first features on a substrate for processing by applying a pattern to the substrate, the mathematical substrate model including a predefined edge basis function and at least one substrate model parameter, wherein the edge basis function is representative of spatial dependence of a specific one of the disturbances related to only an area of the substrate near an edge of the substrate; instructions configured for receiving measurements of second features, similar to the first features, on at least one previous substrate, other than or in addition to the substrate, that has been subjected to the processing; instructions configured for using the measurements and the edge basis function to determine a value of the substrate model parameter; and instructions configured for controlling a lithographic apparatus in accordance with the mathematical substrate model using the value of the substrate model parameter. 9. The computer program product of claim 8 , wherein the edge basis function decreases monotonically with increasing distance from the edge. 10. The computer program product of claim 8 , wherein the edge of the substrate is generally circular; and the edge basis function is a radial basis function. 11. The computer program product of claim 8 , comprising instructions configured to selectively enable or selectively disable including the edge basis function into the mathematical substrate model. 12. The computer program product of claim 8 , wherein the substrate model parameter comprises at least two parameters related to the edge basis function. 13. The computer program product of claim 8 , wherein the substrate model represents disturbances in a selected direction in the plane of the substrate. 14. The computer program product of claim 8 , wherein the mathematical substrate model further comprises one or more substrate basis functions having at least five substrate basis function parameters, wherein the one or more substrate basis functions are representative of the specific one of the disturbances related to an area of the substrate including an area outside of the area of the substrate near the edge of the substrate as well including the area of the substrate near the edge of the substrate, and wherein the substrate model parameter is at least one edge basis function parameter of the predefined edge basis function. 15. An apparatus to control lithographic processing of substrates, the apparatus comprising a data processing apparatus programmed to: invoke a mathematical substrate model for representing disturbances of first features on a substrate for lithographic processing, the mathematical substrate model including a predefined edge basis function and at least one substrate model parameter, wherein the edge basis function is representative of spatial dependence of a specific one of the disturbances related to only an area of the substrate near an edge of the substrate; receive measurements of second features, similar to the first features, on at least one previous substrate, other than or in addition to the substrate, that has been subjected to the lithographic processing; use the measurements and the edge basis function to determine a value of the substrate model parameter; and generate a signal for control of a lithographic apparatus in accordance with the mathematical substrate model using the value of the substrate model parameter. 16. The apparatus of claim 15 , wherein the edge basis function decreases monotonically with increasing distance from the edge. 17. The apparatus of claim 15 , wherein the edge of the substrate is generally circular; and the edge basis function is a radial basis function. 18. The apparatus of claim 15 , programmed to selectively enable or selectively disable including the edge basis function into the mathematical substrate model. 19. The apparatus of claim 15 , wherein the substrate model parameter comprises at least two parameters related to the edge basis function. 20. The apparatus of claim 15 , wherein the substrate model represents disturbances in a selected direction in the plane of the substrate. 21. The apparatus of claim 15 , comprising a metrology tool configured to generate the measurements of second features. 22. The apparatus of claim 15 , comprising the lithographic apparatus.

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Classifications

  • G03F9/7046Primary

    Strategy, e.g. mark, sensor or wavelength selection · CPC title

  • Modelling, e.g. modelling scattering or solving inverse problems · CPC title

  • Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions · CPC title

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What does patent US10495990B2 cover?
Metrology measurements are performed on substrates that have been subjected to lithographic processing. Model parameters are calculated by fitting the measurements to an extended high-order substrate model defined using a combination of basis functions that include an edge basis function related to a substrate edge. A radial edge basis function may be expressed in terms of distance from a subst…
Who is the assignee on this patent?
Asml Netherlands Bv
What technology area does this patent fall under?
Primary CPC classification G03F9/7046. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Dec 03 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).