Systems and methods for internal surface conditioning assessment in plasma processing equipment

Patent metadata

Field	Value
Publication number	US-10490418-B2
Application number	US-201815957827-A
Country	US
Kind code	B2
Filing date	Apr 19, 2018
Priority date	Oct 14, 2014
Publication date	Nov 26, 2019
Grant date	Nov 26, 2019

Abstract

In an embodiment, a plasma source includes a first electrode, configured for transfer of one or more plasma source gases through first perforations therein; an insulator, disposed in contact with the first electrode about a periphery of the first electrode; and a second electrode, disposed with a periphery of the second electrode against the insulator such that the first and second electrodes and the insulator define a plasma generation cavity. The second electrode is configured for movement of plasma products from the plasma generation cavity therethrough toward a process chamber. A power supply provides electrical power across the first and second electrodes to ignite a plasma with the one or more plasma source gases in the plasma generation cavity to produce the plasma products. One of the first electrode, the second electrode and the insulator includes a port that provides an optical signal from the plasma.

First claim

We claim:

1. A method of assessing surface conditioning of one or more internal surfaces of a plasma processing system, the method comprising:
introducing one or more plasma source gases within a plasma generation cavity of the plasma processing system, the plasma generation cavity being bounded at least in part by the one or more internal surfaces;
applying power across electrodes of the plasma processing system to ignite a plasma with the plasma source gases within the plasma generation cavity;
capturing optical emissions from the plasma with an optical probe that is disposed adjacent the plasma generation cavity and is oriented such that the captured optical emissions are not affected by interaction of the plasma with a workpiece; and
monitoring one or more emission peaks of the captured optical emissions to assess the surface conditioning of the one or more internal surfaces.

2. The method of claim 1 , wherein the plasma processing system performs at least an etch recipe that includes the introducing one or more plasma source gases and the applying power, and wherein monitoring the one or more emission peaks includes generating a record of at least a subset of the one or more emission peaks each time the etch recipe reaches a predetermined recipe step.

3. The method of claim 2 , further comprising:
repeating the etch recipe over a plurality of recipe cycles;
calculating a stability metric from the records generated each time the etch recipe reaches the predetermined recipe step over the plurality of recipe cycles; and
comparing the stability metric with a predetermined criterion to assess the surface conditioning of the one or more internal surfaces.

4. The method of claim 2 , wherein:
the one or more plasma source gases introduced during the etch recipe are first plasma source gases, the plasma ignited is a first plasma and the optical emissions are first optical emissions; and
the plasma processing system additionally performs a conditioning recipe that includes:
introducing one or more plasma source gases as second plasma source gases, within the plasma generation cavity, one or more of the second plasma source gases being different from the first plasma source gases;
applying power across the electrodes to ignite a second plasma with the second plasma source gases within the plasma generation cavity;
capturing second optical emissions from the plasma with the optical probe; and
monitoring one or more emission peaks of the second captured optical emissions to assess the surface conditioning of the one or more internal surfaces.

5. The method of claim 2 , wherein the optical probe is a first optical probe, and further comprising controlling the etch recipe with an endpoint detector responsive to emissions captured by a second optical probe, that monitors optical emissions that are affected by interaction of the plasma with the workpiece.

6. The method of claim 2 , wherein the etch recipe includes introducing a fluorine source as at least one of the plasma source gases.

7. The method of claim 1 ,
wherein the plasma generation cavity is bounded by a perforated surface as one of the one or more internal surfaces;
the method further comprising passing plasma products generated by the plasma through the perforated surface toward a processing region; and
wherein capturing the optical emissions comprises utilizing the optical probe in a position that provides the optical probe with no line of sight through the perforated surface to the processing region.

8. The method of claim 7 ,
wherein the perforated surface is a planar perforated surface, and wherein the optical probe is positioned to have a line of sight within the plasma generation cavity that is parallel with the planar perforated surface.

9. The method of claim 7 , wherein:
the perforated surface is a first planar perforated surface;
another of the one or more internal surfaces is a second planar perforated surface;
the first and second planar perforated surfaces are separated by an insulator; and
the insulator includes an optical port that includes the optical probe.

10. The method of claim 1 ,
wherein the plasma processing system is configured to perform a processing recipe that includes introducing the one or more plasma source gases within the plasma generation cavity, applying the power across the electrodes to ignite the plasma, and capturing the optical emissions from the plasma;
wherein the optical emissions include at least one of a hydrogen emission peak and a fluorine emission peak; and
further comprising calculating a stability metric related to the one of the hydrogen emission peak and the fluorine emission peak, over sequential performances of the processing recipe.

11. A method of maintaining process stability in a plasma processing system, comprising:
loading a workpiece into a processing chamber;
generating a hydrogen-containing plasma within an upstream plasma generation cavity, wherein:
one or more internal surfaces bounding the upstream plasma generation cavity are coated with a refractory material, and
one of the internal surfaces is an upstream face of a perforated plate;

passing plasma products of the hydrogen-containing plasma downstream through the perforated plate toward the processing chamber to process the workpiece;
generating a fluorine-containing plasma within the upstream plasma generation cavity to remove at least a portion of hydrogen from the hydrogen-containing plasma that is adhered to the refractory material; and
capturing optical emissions from the fluorine-containing plasma with an optical probe that is disposed adjacent the upstream plasma generation cavity, and is oriented such that the optical probe has an effective view that is limited to optical emissions resulting from the fluorine-containing plasma, and interactions of those emissions with surfaces of the upstream plasma generation cavity.

12. The method of claim 11 , wherein the refractory material is yttria or alumina.

13. The method of claim 11 , further comprising removing the workpiece from the processing chamber prior to generating the fluorine-containing plasma.

14. The method of claim 11 , further comprising controlling at least one parameter of the fluorine-containing plasma in response to the captured optical emissions.

15. The method of claim 14 , wherein the at least one parameter of the fluorine-containing plasma includes a gas flow, a pressure, RF power, or a duration of the fluorine-containing plasma.

16. The method of claim 11 , wherein capturing the optical emissions comprises using the optical probe while the optical probe is in a position to have a line of sight within the upstream plasma generation cavity that is parallel with the upstream face of the perforated plate.

17. The method of claim 11 , wherein capturing the optical emissions comprises using the optical probe while the optical probe is in disposed within an optical port, the optical port being formed within an insulator that separates an upper surface of the upstream plasma generation cavity from the perforated plate.

18. The method of claim 11 , wherein the captured optical emissions comprise a hydrogen emission peak, and further comprising calculating a stability metric related to the hydrogen emission peak.

19. The method of claim 18 , further comprising comparing the stability metric with a predetermined criterion to assess surface conditioning of the refractory material.

20. The method of claim 11 , wherein the optical probe is a first

Assignees

• Applied Materials Inc

Inventors

• Park Soonam
• Zhu Yufei
• Suarez Edwin C
• Ingle Nitin K
• Lubomirsky Dmitry
• Huang Jiayin

Classifications

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/242

  of Group IV materials · CPC title