Apparatus for radical-based deposition of dielectric films

Patent metadata

Field	Value
Publication number	US-10480074-B2
Application number	US-201715822551-A
Country	US
Kind code	B2
Filing date	Nov 27, 2017
Priority date	Jun 27, 2014
Publication date	Nov 19, 2019
Grant date	Nov 19, 2019

Abstract

Embodiments disclosed herein generally include an apparatus for radical-based deposition of dielectric films. The apparatus includes a processing chamber, a radical source coupled to the processing chamber, a substrate support disposed in the processing chamber, and a dual-channel showerhead disposed between the radical source and the substrate support. The dual-channel showerhead includes a plurality of tubes and an internal volume surrounding the plurality of tubes. The plurality of tubes and the internal volume are surrounded by one or more annular channels embedded in the dual-channel showerhead. The dual-channel showerhead further includes a first inlet connected to the one or more channels and a second inlet connected to the internal volume. The processing chamber may be a PECVD chamber, and the apparatus is capable of performing a cyclic process (alternating radical based CVD and PECVD).

First claim

What is claimed is:

1. A dual-channel showerhead, comprising:
a first surface;
a second surface opposite the first surface and spaced from the first surface, wherein an internal volume and one or more channels are defined between the first surface and the second surface, and wherein the one or more channels surround the internal volume;
a plurality of tubes extending from the first surface to the second surface through the internal volume, wherein the plurality of tubes is fluidly isolated from the internal volume;
a first inlet connected to the one or more channels; and
a second inlet positioned to direct radicals to the internal volume bypassing the one or more channels, wherein the first inlet is positioned to provide a gas to a location upstream of the one or more channels, and the second inlet is positioned to provide radicals to a location downstream of the one or more channels.

2. The dual-channel showerhead of claim 1 , wherein the first surface and the second surface are coated with AlN, SiO 2 , Y 2 O 3 , MgO, anodized Al 2 O 3 , sapphire, ceramics containing one or more of Al 2 O 3 , sapphire, AlN, Y 2 O 3 , MgO, or plastics.

3. The dual-channel showerhead of claim 1 , wherein the one or more channels are two channels, and the two channels are connected by one or more connecting channels.

4. The dual-channel showerhead of claim 3 , wherein the cross sectional area of each of the one or more connecting channels is smaller than the cross sectional area of each of the two channels.

5. The dual-channel showerhead of claim 1 , wherein each tube of the plurality of tubes has an inside diameter of about 0.10 in to about 0.35 in.

6. The dual-channel showerhead of claim 5 , further comprising a plurality of openings extending from the internal volume to the second surface.

7. The dual-channel showerhead of claim 6 , wherein each opening of the plurality of openings has a diameter of about 0.01 in to about 0.04 in.

8. A dual-channel showerhead, comprising:
a first surface;
a second surface opposite the first surface and spaced from the first surface, wherein an internal volume and one or more annular channels in fluid communication with the internal volume are defined between the first surface and the second surface, and wherein the one or more annular channels surround the internal volume;
a plurality of tubes extending from the first surface to the second surface through the internal volume, wherein the plurality of tubes is fluidly isolated from the internal volume;
a first inlet connected to the one or more annular channels; and
a second inlet positioned to direct radicals to the internal volume bypassing the one or more annular channels, wherein the first inlet and the second inlet are located on the same surface that is distinct from the first surface and the second surface.

9. The dual-channel showerhead of claim 8 , wherein the first surface and the second surface are coated with AlN, SiO 2 , Y 2 O 3 , MgO, anodized Al 2 O 3 , sapphire, ceramics containing one or more of Al 2 O 3 , sapphire, AlN, Y 2 O 3 , MgO, or plastics.

10. The dual-channel showerhead of claim 8 , wherein the one or more annular channels are two annular channels, and the two annular channels are connected by one or more connecting channels.

11. The dual-channel showerhead of claim 10 , wherein the cross sectional area of each of the one or more connecting channels is smaller than the cross sectional area of each of the two annular channels.

12. The dual-channel showerhead of claim 8 , wherein the plurality of tubes each has an inside diameter of about 0.10 in to about 0.35 in.

13. The dual-channel showerhead of claim 12 , further comprising a plurality of openings extending from the internal volume to the second surface.

14. The dual-channel showerhead of claim 13 , wherein the plurality of openings each has a diameter of about 0.01 in to about 0.04 in.

15. An apparatus, comprising:
a radical source; and
a processing chamber coupled to the radical source, wherein the processing chamber comprises:
a substrate support; and
a dual-channel showerhead disposed between the radical source and the substrate support, wherein the dual-channel showerhead comprises:
a first surface facing the radical source;
a second surface facing the substrate support and spaced from the first surface, wherein an internal volume and one or more channels are defined between the first surface and the second surface, and wherein the one or more channels surround the internal volume;
a plurality of tubes extending from the first surface to the second surface through the internal volume, wherein the plurality of tubes is fluidly isolated from the internal volume;
a first inlet connected to the one or more channels; and
a second inlet positioned to direct radicals to the internal volume bypassing the one or more channels, wherein the first inlet is positioned to provide a gas to a location upstream of the one or more channels, and the second inlet is positioned to provide radicals to a location downstream of the one or more channels.

16. The apparatus of claim 15 , wherein the dual-channel showerhead is grounded and the substrate support is connected to an RF source.

17. The apparatus of claim 15 , wherein the substrate support comprises one or more heating elements and a cooling channel.

18. The apparatus of claim 15 , wherein the substrate support is connected to a DC source.

19. The apparatus of claim 15 , wherein the substrate support is rotatable.

20. The apparatus of claim 15 , wherein the processing chamber is a PECVD chamber.

Assignees

• Applied Materials Inc

Inventors

• Zhou Jianhua
• Rocha-Alvarez Juan Carlos
• Chen Yihong
• Mallick Abhijit Basu
• Lopez Oscar
• Liu Ningli

Classifications

• H01J37/32357

  Generation remote from the workpiece, e.g. down-stream · CPC title

• H01J37/32422

  Arrangement for selecting ions or species in the plasma · CPC title

• H01J37/32449

  Gas control, e.g. control of the gas flow · CPC title

• C23C16/45574

  Nozzles for more than one gas · CPC title

• C23C16/4586

  Elements in the interior of the support, e.g. electrodes, heating or cooling devices · CPC title