Self aligned buried power rail

Patent metadata

Field	Value
Publication number	US-10475692-B2
Application number	US-201715481826-A
Country	US
Kind code	B2
Filing date	Apr 7, 2017
Priority date	Apr 7, 2017
Publication date	Nov 12, 2019
Grant date	Nov 12, 2019

Abstract

The present disclosure relates to semiconductor structures and, more particularly, to self-aligned buried power rail structures and methods of manufacture. The method includes: forming at least one fin structure of a first dimension in a substrate; forming at least one fin structure of a second dimension in the substrate; removing at least a portion of the at least one fin structure of the second dimension to form a trench; filling the trench with conductive metal to form a buried power rail structure within the trench; and forming a contact to the buried power rail structure.

First claim

What is claimed:

1. A method, comprising:
forming at least one fin structure of a first dimension in a substrate;
forming at least one fin structure of a second dimension in the substrate;
removing at least a portion of the at least one fin structure of the second dimension to form a trench;
filling the trench with conductive metal to form a buried power rail structure within the trench; and
forming a contact to the buried power rail structure, wherein:
the forming of the at least one fin structure of the first dimension comprises a first spacer transfer process which forms a first spacer that defines the at least one fin structure of the first dimension;
the forming of the at least one fin structure of the second dimension comprises a second spacer transfer process which forms a second spacer that defines the at least one fin structure of the second dimension; and
the second spacer is wider than the first spacer.

2. The method of claim 1 , wherein the first dimension is narrower than the second dimension.

3. The method of claim 1 , wherein the filling of the trench with the conductive metal includes lining the trench with a conductive barrier material and filling remaining portions of the trench with metal fill material, where the metal trench is self-aligned within the original fin grating.

4. The method of claim 3 , further comprising recessing of the conductive barrier material and the metal fill material, and depositing a capping material over the recessed conductive barrier material and the metal fill material.

5. The method of claim 3 , wherein the removing of the at least a portion of the at least one fin structure of the second dimension includes completely removing of the at least one fin structure of the second dimension.

6. The method of claim 3 , wherein the removing of the at least a portion of the at least one fin structure of the second dimension includes partially removing of the at least one fin structure of the second dimension.

7. The method of claim 3 , wherein the trench is lined with an insulator material under the conductive barrier material.

8. The method of claim 1 , wherein:
the second spacer is positioned above the first spacer.

9. The method of claim 8 , wherein the second spacer overlaps with edges of the first spacer.

10. The method of claim 1 , wherein the filling of the trench with the conductive metal is an electroless metal fill process, performed over a barrier liner material.

11. The method of claim 1 , wherein the trench is isolated from the at least one fin structure of the first dimension by gap fill material.

12. A method comprising:
forming a first spacer of a first dimension over a substrate material;
forming a second spacer of a second dimension, wider than the first dimension and above the first spacer;
transferring the first dimension of the first spacer into the substrate to form a narrow fin structure;
transferring the second dimension of the second spacer into the substrate to form a wide fin structure, wherein the narrow fin structure is narrower than the wide fin structure;
removing at least part of the wide fin structure to form a trench, which is isolated from the narrow fin structure;
forming a buried power rail by filling the trench with conductive material; and
forming a contact to the buried power rail.

13. The method of claim 12 , further comprising removing the second spacer and the first spacer after forming of the wide fin structure and the narrow fin structure.

14. The method of claim 13 , wherein the filling of the trench with the conductive material comprises:
lining the trench with a conductive barrier material and filling remaining portions of the trench with metal fill material; and
recessing of the conductive barrier material and the metal fill material.

15. The method of claim 14 , further comprising depositing a capping material over the recessed conductive barrier material and the metal fill material.

16. The method of claim 12 , wherein the removing at least part of the wide fin structure includes partially removing of the wide fin structure.

17. The method of claim 12 , wherein the trench is lined with an insulator material under the conductive material.

18. The method of claim 12 , wherein the filling of the trench with the conductive metal is an electroless metal fill process, performed over a barrier liner material.

Assignees

• Globalfoundries Inc

Inventors

• Licausi Nicholas V
• Bouche Guillaume
• Liebmann Lars W

Classifications

• H10W20/427

  Power or ground buses · CPC title

• H10W20/20

  Interconnections within wafers or substrates, e.g. through-silicon vias [TSV] · CPC title

• H10W20/021 Primary

  of interconnections within wafers or substrates · CPC title

• H01L21/743 Primary

  Electricity · mapped topic

• H01L23/535

  Electricity · mapped topic