Semiconductor device and semiconductor package including the same

Patent metadata

Field	Value
Publication number	US-10468415-B2
Application number	US-201715834203-A
Country	US
Kind code	B2
Filing date	Dec 7, 2017
Priority date	Dec 7, 2016
Publication date	Nov 5, 2019
Grant date	Nov 5, 2019

Abstract

The invention provides a semiconductor device including a capacitor capable of securing capacity and exhibiting improved reliability and a semiconductor package comprising the same. The semiconductor device includes: a substrate having a cell block; a plurality of capacitors, which are in the cell block of the substrate and have first electrodes; and a support pattern, which contacts sidewalls of the first electrodes of the plurality of capacitors and supports the plurality of capacitors, wherein the support pattern includes an upper support pattern including: a first upper pattern having a plate-like structure connected as a whole in the cell block; and a second upper pattern, which contacts a bottom surface of the first upper pattern and has a top surface having a smaller area than the bottom surface of the first upper pattern, the upper support pattern contacting sidewalls of upper ends of the first electrodes.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate having a cell block;
a plurality of capacitors in the cell block, the plurality of capacitors extending in a first direction and having first electrodes, the first electrodes having upper ends further from a surface of the substrate, the first electrodes having sidewalls; and
a support pattern contacting sidewalls of the first electrodes of the plurality of capacitors and configured to support the plurality of capacitors,
the support pattern including an upper support pattern, the upper support, pattern including,
a first upper pattern having a top surface and a bottom surface, the top surface and the bottom surface parallel to the surface of the substrate, the top surface and the bottom surface having a plate-like structure when viewed from a plan view above a surface of the substrate, the plate-like structure extending in a second direction perpendicular to the first direction and extending in a third direction perpendicular to the first direction and the second direction and connected contiguously in the cell block, and
a second upper pattern contacting the bottom surface of the first upper pattern and having a top surface, the top surface of the second upper pattern having a smaller surface area than a surface area of the bottom surface of the first upper pattern when viewed from the plan view,
the upper support pattern contacting sidewalls of upper, ends of the first electrodes.

2. The semiconductor device according to claim 1 , wherein, when viewed from the first direction, the second upper pattern is separate from an edge of the bottom surface of the first upper pattern and the second upper pattern contacts an inner portion of the bottom surface of the first upper pattern.

3. The semiconductor device according to claim 1 , wherein the second upper pattern includes an upper Outer pattern contacting the first electrodes of the capacitors, which, when viewed from the first direction, are adjacent to a corner of the bottom surface of the first upper pattern and adjacent to at least a portion of an edge of the bottom surface of the first upper pattern, the edge being connected to the corner.

4. The semiconductor device according to claim 1 , wherein the upper support pattern further includes a third upper pattern configured to contact a bottom surface of the second upper pattern and having a top surface having a larger surface area than the bottom surface of the second upper pattern, when viewed from the first direction.

5. The semiconductor device according to claim 4 , wherein the third upper pattern has a same planar shape as the first upper pattern when viewed from the first direction.

6. The semiconductor device according to claim 1 , wherein the support pattern further includes a lower support pattern contacting sidewalls under the upper ends of the first electrodes of the plurality of capacitors and having a same planar shape as the first upper pattern.

7. The semiconductor device according to claim 1 , wherein the plurality of capacitors includes a plurality of functional capacitors in an inner region of the cell block, and a plurality of dummy capacitors in an outer region of the cell block and surrounding the plurality of functional capacitors,
the first upper pattern simultaneously supporting at least some of the plurality of functional capacitors and at least some of the plurality of dummy capacitors, and
the second upper pattern supporting at least some of the plurality of dummy capacitors.

8. The semiconductor device according to claim 7 , wherein the second upper pattern continuously surrounds the plurality of functional capacitors.

9. A semiconductor device comprising:
a substrate having a plurality of sub-cell blocks separated from one another by a peripheral region;
a plurality of capacitors in the sub-cell blocks of the substrate, the plurality of capacitors each including a cylindrical first electrode, and a second electrode, the second electrode facing the first electrode, a dielectric film between the second electrode and the first electrode, the first electrode including upper ends further from a surface of the substrate; and
a support pattern contacting outer sidewalls upper ends of the first electrodes of the capacitors in the respective plurality of sub-cell blocks and supporting the plurality of capacitors,
the support pattern including,
an upper support pattern including a first upper pattern contacting the outer sidewalls of the upper ends of the first electrodes and has a plate-like structure when viewed from a plan view above a surface of the substrate, the plate-like structure connected as a whole in each of the sub-cell blocks, and a second upper pattern contacting a portion of a bottom surface of the first upper pattern, the portion of the bottom surface of the first upper pattern being separated from an edge of the bottom surface of the first upper pattern, and
a lower support pattern contacting outer sidewalls of the first electrode and closer to the surface of the substrate than the upper support pattern.

10. The semiconductor device according to claim 9 , wherein the second upper pattern includes a different material from the first upper pattern.

11. The semiconductor device according to claim 9 , wherein the plurality of capacitors includes a plurality of functional capacitors and a plurality of dummy capacitors, and the second upper pattern includes an upper outer pattern adjacent to an edge of the bottom surface of the first upper pattern, the edge viewed from the bottom surface of the first upper pattern, the upper outer pattern supporting the plurality of dummy capacitors and surrounding the plurality of functional capacitors.

12. The semiconductor device according to claim 11 , wherein the first upper pattern includes a plurality of upper openings, and
the second upper pattern contacts at least one portion of the bottom surface of the first upper pattern being separated from the upper openings.

13. The semiconductor device according to claim 12 , wherein the second upper pattern further includes a plurality of upper outer patterns supporting some of the plurality of functional capacitors, the plurality of upper outer patterns having island shapes.

14. The semiconductor device according to claim 9 , wherein the upper support pattern further includes a third upper pattern contacting a bottom surface of the second upper pattern and having plate-like structure connected contiguously in each of the sub-cell blocks.

15. The semiconductor device according to claim 9 , wherein the lower support pattern includes:
a rust lower pattern having a same planar shape when viewed from a direction vertical to a surface of the substrate as the first upper pattern, and
a second lower pattern contacting a portion of a bottom surface of the first lower pattern separated from an edge of the bottom surface of the first lower pattern.

16. A semiconductor device comprising:
a substrate;
at least one dummy capacitor connected to the substrate, the at least one dummy capacitor electrically isolated from other components during an operation of the semiconductor device;
at least one functional capacitor, the at least one functional, capacitor connected to the substrate, the at least one functional capacitor electrically connected to store charge during the operation of the semiconductor device;
at least one first upper pattern supporting the at least, one functional capacitor and supporting the at least one dummy capacitor; and
at least one second upper pattern supporting the at least one dummy

Assignees

• Samsung Electronics Co Ltd

Inventors

• You Hee-Wook
• Lee Won-Chul

Classifications

• H01L27/0207

  Electricity · mapped topic

• H01L27/10876

  Electricity · mapped topic

• H01L28/90

  Electricity · mapped topic

• H01L27/10814 Primary

  Electricity · mapped topic

• H01L28/91

  Electricity · mapped topic