Methods of forming material layer

Patent metadata

Field	Value
Publication number	US-10468256-B2
Application number	US-201715482005-A
Country	US
Kind code	B2
Filing date	Apr 7, 2017
Priority date	Aug 4, 2015
Publication date	Nov 5, 2019
Grant date	Nov 5, 2019

Abstract

A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

First claim

What is claimed is:

1. A semiconductor manufacturing apparatus comprising:
a reaction chamber that is configured for loading and unloading a substrate;
a source material supply apparatus configured for supplying a source material to the reaction chamber, the source material being a precursor of a metal or a semimetal having a ligand;
a modifier supply apparatus configured for supplying an ether-based modifier to the reaction chamber;
a reaction material supply apparatus configured for supplying a reaction material to the reaction chamber; and
a purge gas supply apparatus configured for supplying a purge gas to the reaction chamber,
wherein the ether-based modifier is tetrahydrofuran (THF), and the modifier supply apparatus is configured for supplying the ether-based modifier before the supplying a source material or after the supplying a source material within one cycle.

2. The semiconductor manufacturing apparatus according to claim 1 , wherein the reaction material is an oxidizer selected from the group consisting of O 3 , H 2 O, O 2 , NO 2 , NO, N 2 O, H 2 O, alcohol, a metal alkoxide, plasma O 2 , remote plasma O 2 , plasma N 2 O, plasma H 2 O, and a combination thereof.

3. The semiconductor manufacturing apparatus according to claim 1 , wherein the source material supply apparatus comprises a vaporizer in which the source material is vaporized.

4. The semiconductor manufacturing apparatus according to claim 3 , wherein a flow rate of the source material from the vaporizer to the reaction chamber is controlled by a flow rate control device interposed therebetween.

5. The semiconductor manufacturing apparatus according to claim 1 , wherein the reaction material supply apparatus is configured to supply the reaction material to the reaction chamber while the source material supply apparatus does not supply the source material to the reaction chamber.

6. The semiconductor manufacturing apparatus according to claim 5 , wherein the modifier supply apparatus is configured to supply the ether-based modifier to the reaction chamber after the supplying of the reaction material is terminated and before the supplying of the source material begins.

7. The semiconductor manufacturing apparatus according to claim 5 , wherein the modifier supply apparatus is configured to supply the ether-based modifier to the reaction chamber after the supplying of the source material is terminated and before the supplying of the reaction material begins.

8. The semiconductor manufacturing apparatus according to claim 5 , wherein the modifier supply apparatus is configured to supply the ether-based modifier to the reaction chamber while the source material is supplied to the reaction chamber by the source material supply apparatus.

9. The semiconductor manufacturing apparatus according to claim 5 , wherein the modifier supply apparatus is configured to begin supplying the ether-based modifier to the reaction chamber after the source material supply apparatus begins supplying the source material to the reaction chamber, and the modifier supply apparatus is configured to stop supplying the ether-based modifier to the reaction chamber after the source material supply apparatus stops supplying the source material to the reaction chamber.

10. The semiconductor manufacturing apparatus according to claim 5 , wherein the source material supply apparatus is configured to begin supplying the source material to the reaction chamber as soon as the modifier supply apparatus stops a first supplying the ether-based modifier to the reaction chamber in a cycle, and the modifier supply apparatus is configured to begin a second supplying the ether-based modifier to the reaction chamber again as soon as the source material supply apparatus stops supplying the source material to the reaction chamber in the cycle.

11. The semiconductor manufacturing apparatus according to claim 5 , wherein the modifier supply apparatus is configured to supply the ether-based modifier to the reaction chamber while the reaction material is supplied to the reaction chamber by the reaction material supply apparatus.

12. The semiconductor manufacturing apparatus according to claim 5 , wherein the modifier supply apparatus is configured to begin supplying the ether-based modifier to the reaction chamber before the reaction material supply apparatus begins supplying the reaction material to the reaction chamber, and the modifier supply apparatus is configured to stop supplying the ether-based modifier to the reaction chamber before the reaction material supply apparatus stops supplying the reaction material to the reaction chamber.

13. The semiconductor manufacturing apparatus according to claim 5 , wherein the modifier supply apparatus is configured to begin supplying the ether-based modifier to the reaction chamber after the reaction material supply apparatus begins supplying the reaction material to the reaction chamber, and the modifier supply apparatus is configured to stop supplying the ether-based modifier to the reaction chamber after the reaction material supply apparatus stops supplying the reaction material to the reaction chamber.

14. The semiconductor manufacturing apparatus according to claim 5 , wherein the modifier supply apparatus is configured to begin supplying the ether-based modifier to the reaction chamber before the reaction material supply apparatus begins supplying the reaction material to the reaction chamber, and the modifier supply apparatus is configured to stop supplying the ether-based modifier to the reaction chamber after the reaction material supply apparatus stops supplying the reaction material to the reaction chamber.

15. A semiconductor manufacturing apparatus comprising:
a reaction chamber that is configured for loading and unloading a substrate;
a source material supply apparatus configured for supplying a source material to the reaction chamber, the source material being a precursor of a metal or a semimetal having a ligand;
a modifier supply apparatus configured for supplying an ether-based modifier to the reaction chamber; and
a purge gas supply apparatus configured for supplying a purge gas to the reaction chamber,
wherein
the metal or semimetal of the precursor comprises at least one selected from the group consisting of zirconium (Zr), lithium (Li), beryllium Be), boron (B), sodium (Na), magnesium (Mg), aluminum (Al), potassium (K), calcium (Ca), scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), rubidium (Rb), strontium (Sr), yttrium (Y), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), indium (In), tin (Sn), antimony (Sb), cesium (Cs), barium (Ba), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Hg), lead (Pb), bismuth (Bi), polonium (Po), Francium (Fr), radium (Ra), actinium (Ac), and silicon (Si), the ether-based modifier is tetrahydrofuran (THF), and the modifier supply apparatus is configured for supplying the ether-based modifier before the supplying a source material or after the supplying a source material within one cycle.

16. The semiconductor manufacturing apparatus according to claim 15 , further comprising a reaction material supply ap

Assignees

• Samsung Electronics Co Ltd

Inventors

• MOON Sun-min
• Kim Youn-Soo
• Lim Han-Jin
• Lee Yong-Jae
• Oh Se-Hoon
• Kim Hyun-Jun
• Lee Jin-Sun

Classifications

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10D64/01342

  by deposition, e.g. evaporation, ALD or laser deposition (H10D64/01344 takes precedence) · CPC title

• H10D64/013 Primary

  of electrodes having a conductor capacitively coupled to a semiconductor by an insulator · CPC title