Methods of forming material layer

Patent metadata

Field	Value
Publication number	US-10103026-B2
Application number	US-201615227089-A
Country	US
Kind code	B2
Filing date	Aug 3, 2016
Priority date	Aug 4, 2015
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

A method of forming a material layer includes providing a substrate into a reaction chamber, providing a source material onto a substrate, the source material being a precursor of a metal or semimetal having a ligand, providing an ether-based modifier on the substrate, purging an inside of the reaction chamber, and reacting a reaction material with the source material to form the material layer.

First claim

What is claimed is:

1. A method of forming a material layer, the method comprising:
providing a substrate into a reaction chamber;
providing a source material onto the substrate, the source material being a precursor of a metal or semimetal having a ligand;
providing an ether-based modifier on the substrate;
purging an inside of the reaction chamber; and
reacting a reaction material with the source material to form the material layer,
wherein the ether-based modifier is tetrahydrofuran (THF), and the providing an ether-based modifier on the substrate is at least partially performed before the providing a source material or after the providing a source material within one cycle.

2. The method of claim 1 , wherein
the providing a source material comprises providing the source material to form a layer of the source material, and
the providing an ether-based modifier is performed after the providing a source material.

3. The method of claim 1 , wherein
the providing a source material is performed to form a layer of the source material, and
the providing an ether-based modifier is performed before the providing a source material.

4. The method of claim 2 , further comprising:
purging the inside of the reaction chamber between the providing a source material and the providing an ether-based modifier.

5. The method of claim 1 , wherein the providing a source material at least partially temporally overlaps with the providing an ether-based modifier.

6. The method of claim 1 , wherein the providing a source material, the providing an ether-based modifier, the purging an inside of the reaction chamber, and the providing a reaction material are repeated at least twice until the material layer is formed to a desired thickness.

7. The method of claim 1 , wherein the reaction material is an oxidizer or a nitrifier.

8. The method of claim 7 , wherein the oxidizer comprises O 3 , H 2 O, O 2 , NO 2 , NO, N 2 O, H 2 O, alcohol, a metal alkoxide, plasma O 2 , remote plasma O 2 , plasma N 2 O, plasma H 2 O, or a combination thereof.

9. The method of claim 7 , wherein the nitrifier comprises N 2 , NH 3 , hydrazine (N 2 H 4 ), plasma N 2 , remote plasma N 2 , or a combination thereof.

10. The method of claim 1 , wherein
the providing a reaction material comprises providing the reaction material to form no more than one layer of the material layer, and
the providing an ether-based modifier at least partially temporally overlaps with the providing a reaction material.

11. The method of claim 1 , wherein the source material comprises a first source material and a second source material different from the first source material.

12. The method of claim 1 , wherein the metal or semimetal of the precursor comprises at least one selected from the group consisting of zirconium (Zr), lithium (Li), beryllium Be), boron (B), sodium (Na), magnesium (Mg), aluminum (Al), potassium (K), calcium (Ca), scandium (Sc), titanium (Ti), vanadium (V), chromium (Cr), manganese (Mn), iron (Fe), cobalt (Co), nickel (Ni), copper (Cu), zinc (Zn), gallium (Ga), germanium (Ge), rubidium (Rb), strontium (Sr), yttrium (Y), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), palladium (Pd), silver (Ag), cadmium (Cd), indium (In), tin (Sn), antimony (Sb), cesium (Cs), barium (Ba), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), holmium (Ho), erbium (Er), thulium (Tm), ytterbium (Yb), lutetium (Lu), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), osmium (Os), iridium (Ir), platinum (Pt), gold (Au), mercury (Hg), lead (Pb), bismuth (Bi), polonium (Po), Francium (Fr), radium (Ra), actinium (Ac), and silicon (Si).

13. The method of claim 1 , wherein the source material is TEMAZ.

14. The method of claim 1 , wherein the reaction material is O 3 .

15. The method of claim 1 , wherein the providing of the ether-based modifier is such that an oxygen atom of the ether-based modifier is combined with a central atom of the source material via a van der Waals attraction.

Assignees

• Samsung Electronics Co Ltd

Inventors

• MOON Sun-min
• Kim Youn-Soo
• Lim Han-Jin
• Lee Yong-Jae
• Oh Se-Hoon
• Kim Hyun-Jun
• Lee Jin-Sun

Classifications

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10D64/01342

  by deposition, e.g. evaporation, ALD or laser deposition (H10D64/01344 takes precedence) · CPC title

• H10D64/013 Primary

  of electrodes having a conductor capacitively coupled to a semiconductor by an insulator · CPC title