RF power delivery regulation for processing substrates

Patent metadata

Field	Value
Publication number	US-10468233-B2
Application number	US-201715689529-A
Country	US
Kind code	B2
Filing date	Aug 29, 2017
Priority date	Oct 5, 2015
Publication date	Nov 5, 2019
Grant date	Nov 5, 2019

Abstract

Methods of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power are provided herein. In some embodiments, a method of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power includes providing a first pulsed RF power waveform to a process chamber at a first power level during a first time period, providing a second pulsed RF power waveform at a first power level to the process chamber during the first time period, obtaining a first reflected power created by the first and second pulsed RF power waveforms provided during the first time period, and performing a first load leveling process to adjust the first power level of the first pulsed RF power waveform to compensate for the obtained reflected power during the first time period to produce a delivered power at a preset power level.

First claim

The invention claimed is:

1. A non-transitory computer readable medium having instructions stored thereon that, when executed, cause a method of operating a plasma enhanced substrate processing system using pulsed radio frequency (RF) power, the method comprising:
providing a first pulsed RF power waveform to a process chamber at a first power level during a first time period;
providing a second pulsed RF power waveform at a first power level to the process chamber during the first time period;
obtaining a first reflected power created by the first and second pulsed RF power waveforms provided during the first time period; and
performing a first load leveling process to adjust the first power level of the first pulsed RF power waveform to compensate for the obtained first reflected power during the first time period to produce a delivered power at a preset power level.

2. The non-transitory computer readable medium of claim 1 , wherein the method further comprises:
providing the first pulsed RF power waveform at a second power level during a second time period, wherein the second power level is substantially equivalent to the first power level;
providing a second pulsed RF power waveform at a second power level during the second time period;
obtaining a second reflected power created by the first and second pulsed RF power waveforms provided during the second time period; and
performing a second load leveling process to adjust the first power level of the first pulsed RF power waveform to compensate for the obtained second reflected power during the first time period to produce a delivered power at the preset power level.

3. The non-transitory computer readable medium of claim 2 , wherein the first pulsed RF power waveform is an RF source signal.

4. The non-transitory computer readable medium of claim 2 , wherein the second pulsed RF power waveform is an RF bias signal.

5. The non-transitory computer readable medium of claim 2 , wherein the second power level of the second pulsed RF power is a zero power level.

6. The non-transitory computer readable medium of claim 2 , wherein the first and second load leveling processes performed adjust the first and second power levels, respectively, for the first pulsed RF power waveform to provide a substantially constant delivered power.

7. The non-transitory computer readable medium of claim 2 , wherein the obtained first and second reflected powers are measured values.

8. The non-transitory computer readable medium of claim 2 , wherein the obtained first and second reflected powers are calculated values based on the first and second pulsed RF power waveforms used, respectively.

9. The non-transitory computer readable medium of claim 2 , wherein the first reflected power is created by the first and second pulsed RF power waveforms provided during the first time, and wherein the second reflected power is created by the first and second pulsed RF power waveforms provided during the second time period.

10. The non-transitory computer readable medium of claim 2 , wherein a frequency of the first pulsed RF power waveform is about 2 MHz to about 162 MHz, and wherein a frequency of the second pulsed RF power waveform is about 2 MHz to about 162 MHz.

11. The non-transitory computer readable medium of claim 2 , wherein the first and second power levels of the first pulsed RF power waveform is about 200 watts to about 5.0 KW.

12. The non-transitory computer readable medium of claim 2 , wherein the first power level of the second pulsed RF power waveform is about 200 watts to about 5.0 KW, and wherein the second power level is about 0-99% of the first power level of the second pulsed RF power waveform.

13. The non-transitory computer readable medium of claim 2 , wherein the first pulsed RF power waveform and the second pulsed RF power waveform are synchronized.

14. The non-transitory computer readable medium of claim 2 , wherein the first and second time periods are different from each other.

15. A plasma enhanced substrate processing system comprising:
a first RF generator; and
a second RF generator; and
one or more controllers, having at least one processor and having instructions stored thereon that, when executed by the at least one processor, causes the first RF generator to provide a first pulsed RF power waveform to a process chamber at a first power level during a first time period, and provide the first pulsed RF power waveform at a second power level during a second time period, and causes the second RF generator to provide a second pulsed RF power waveform at a first power level to the process chamber during the first time period, and a second pulsed RF power waveform at a second power level during the second time period,
wherein the first RF generator is further configured to detect reflected power in the substrate processing system at each of the first and second time periods separately, and performs load leveling processes to adjust the first and second power levels of the first pulsed RF power waveform to compensate for the detected reflected power to produce a delivered power at a preset power level.

16. The plasma enhanced substrate processing system of claim 15 , wherein the first pulsed RF power waveform is an RF source signal, and wherein the second pulsed RF power waveform is an RF bias signal.

17. The plasma enhanced substrate processing system of claim 15 , wherein the second power level of the second pulsed RF power is a zero power level.

18. The plasma enhanced substrate processing system of claim 15 , wherein a frequency of the first pulsed RF power waveform is about 2 MHz to about 162 MHz, and wherein a frequency of the second pulsed RF power waveform is about 2 MHz to about 162 MHz.

19. The plasma enhanced substrate processing system of claim 15 , wherein the first and second power levels of the first pulsed RF power waveform is about 200 watts to about 5.0 KW.

20. The plasma enhanced substrate processing system of claim 15 , wherein the first power level of the second pulsed RF power waveform is about 200 watts to about 5.0 KW, and wherein the second power level is about 0-99% of the first power level of the second pulsed RF power waveform.

Assignees

• Applied Materials Inc

Inventors

• Kawasaki Katsumasa
• Phi Justin
• Shoji Sergio

Classifications

• H01J37/32183

  Matching circuits · CPC title

• H01J37/32146 Primary

  Amplitude modulation, includes pulsing · CPC title

• H01J37/32082 Primary

  Radio frequency generated discharge (H01J37/32357, H01J37/32366, H01J37/32394 and H01J37/32403 take precedence) · CPC title

• H01J2237/334

  Etching · CPC title

• H01J37/32165

  Plural frequencies · CPC title