Metal oxide film and method for forming metal oxide film

Patent metadata

Field	Value
Publication number	US-10461099-B2
Application number	US-201815879506-A
Country	US
Kind code	B2
Filing date	Jan 25, 2018
Priority date	Nov 8, 2012
Publication date	Oct 29, 2019
Grant date	Oct 29, 2019

Abstract

A metal oxide film including a crystal part and having highly stable physical properties is provided. The size of the crystal part is less than or equal to 10 nm, which allows the observation of circumferentially arranged spots in a nanobeam electron diffraction pattern of the cross section of the metal oxide film when the measurement area is greater than or equal to 5 nmφ and less than or equal to 10 nmφ.

First claim

The invention claimed is:

1. A method for manufacturing a metal oxide film comprising:
forming the metal oxide film by a sputtering method using a sputtering target comprising a polycrystalline oxide in an atmosphere where oxygen partial pressure is greater than or equal to 33%,
wherein the sputtering target comprises indium, gallium and zinc,
wherein the metal oxide film comprises a plurality of crystal parts when the metal oxide film is formed,
wherein a size of one of the plurality of crystal parts is less than or equal to 10 nm, and
wherein a crystal peak is not observable in an XRD spectrum with respect to the metal oxide film.

2. The method for manufacturing a metal oxide film according to claim 1 ,
wherein the size of the one of the plurality of crystal parts is less than or equal to 5 nm.

3. The method for manufacturing a metal oxide film according to claim 1 ,
wherein the XRD spectrum is measured by an out-of-plane method.

4. The method for manufacturing a metal oxide film according to claim 1 ,
wherein the metal oxide film is formed without heating a substrate on which the metal oxide film is formed.

5. The method for manufacturing a metal oxide film according to claim 1 , further comprising,
performing a first heat treatment in an atmosphere comprising nitrogen, and
performing a second heat treatment in an atmosphere comprising nitrogen and oxygen.

6. A method for manufacturing a metal oxide film comprising:
forming the metal oxide film by a sputtering method using a sputtering target comprising a polycrystalline oxide in an atmosphere where oxygen partial pressure is greater than or equal to 33%,
wherein the sputtering target comprises indium, gallium and zinc,
wherein the metal oxide film comprises a crystal part when the metal oxide film is formed,
wherein a size of the crystal part is less than or equal to 10 nm,
wherein a crystal peak is not observable in an XRD spectrum with respect to the metal oxide film, and
wherein a plurality of circumferentially distributed spots are observable in a measurement area greater than or equal to an area with a diameter of 5 nmφ and less than or equal to an area with a diameter of 10 nmφ in a nanobeam electron diffraction pattern of a cross-section of the metal oxide film.

7. The method for manufacturing a metal oxide film according to claim 6 ,
wherein there is no difference between the first plurality of circumferentially distributed spots and a second plurality of circumferentially distributed spots which are observable in a nanobeam electron diffraction of a cross-section in which a measurement area is 5 nmϕ or more and 10 nmϕ or less with respect to the same metal oxide film after being irradiated with an electron beam whose beam diameter is converged to about 1 nmϕ for one minute.

8. The method for manufacturing a metal oxide film according to claim 7 ,
wherein an acceleration voltage for the electron beam is 200 kV.

9. The method for manufacturing a metal oxide film according to claim 6 ,
wherein the size of the crystal part is less than or equal to 5 nm.

10. The method for manufacturing a metal oxide film according to claim 6 ,
wherein the XRD spectrum is measured by an out-of-plane method.

11. The method for manufacturing a metal oxide film according to claim 6 ,
wherein the metal oxide film is formed without heating a substrate on which the metal oxide film is formed.

12. The method for manufacturing a metal oxide film according to claim 6 , further comprising,
performing a first heat treatment in an atmosphere comprising nitrogen, and
performing a second heat treatment in an atmosphere comprising nitrogen and oxygen.

13. A method for manufacturing a metal oxide film comprising:
forming the metal oxide film by a sputtering method using a sputtering target comprising a polycrystalline oxide in an atmosphere where oxygen partial pressure is greater than or equal to 33%,
wherein the sputtering target comprises indium, gallium and zinc,
wherein the metal oxide film comprises a crystal part when the metal oxide film is formed,
wherein a size of the crystal part is less than or equal to 10 nm,
wherein a crystal peak is not observable in an XRD spectrum with respect to the metal oxide film,
wherein a plurality of circumferentially distributed spots are observable in a measurement area greater than or equal to an area with a diameter of 5 nmφ and less than or equal to an area with a diameter of 10 nmφ in a nanobeam electron diffraction pattern of a cross-section of the metal oxide film, and
wherein a halo pattern is observable in a selected-area electron diffraction pattern of a plane of the metal oxide film.

14. The method for manufacturing a metal oxide film according to claim 13 ,
wherein there is no difference between the first plurality of circumferentially distributed spots and a second plurality of circumferentially distributed spots which are observable in a nanobeam electron diffraction of a cross-section in which a measurement area is 5 nmϕ or more and 10 nmϕ or less with respect to the same metal oxide film after being irradiated with an electron beam whose beam diameter is converged to about 1 nmϕ for one minute.

15. The method for manufacturing a metal oxide film according to claim 14 ,
wherein an acceleration voltage for the electron beam is 200 kV.

16. The method for manufacturing a metal oxide film according to claim 13 ,
wherein the size of the crystal part is less than or equal to 5 nm.

17. The method for manufacturing a metal oxide film according to claim 13 ,
wherein the XRD spectrum is measured by an out-of-plane method.

18. The method for manufacturing a metal oxide film according to claim 13 ,
wherein the metal oxide film is formed without heating a substrate on which the metal oxide film is formed.

19. The method for manufacturing a metal oxide film according to claim 13 , further comprising,
performing a first heat treatment in an atmosphere comprising nitrogen, and
performing a second heat treatment in an atmosphere comprising nitrogen and oxygen.

Assignees

• Semiconductor Energy Lab

Inventors

• Takahashi Masahiro
• Hirohashi Takuya
• Tsubuku Masashi
• Ishihara Noritaka
• Oota Masashi

Classifications

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3426 Primary

  Oxides · CPC title

• H10P14/2922

  being non-crystalline insulating materials, e.g. glass or polymers · CPC title

• H10P14/2901

  Materials · CPC title

• H10P14/22

  using physical deposition, e.g. vacuum deposition or sputtering · CPC title